Adaptive focusing system for a scanning metrology tool

    公开(公告)号:US11333616B2

    公开(公告)日:2022-05-17

    申请号:US17053746

    申请日:2020-10-08

    Inventor: Gilad Laredo

    Abstract: An adaptive focusing system including an optics module, an optics module height positioner (OMHP), a position sensor operative to generate a position output indicating a height of the optics module, a predictive height estimator operative to generate an estimated height value of a sample at each site of a plurality of sites, and generate a desired optics module height output for each of the sites, a regulator operative to generate, at least partially based on the desired optics module height output and a known height of the optics module, a sequence of optics module height control instructions for the plurality of sites, a driver operative to provide a sequence of control outputs to the OMHP and a model predictive controller (MPC) operative to monitor differences between a reported height of the optics module and an MPC-expected height of the optics module, thereby to generate system amelioration values.

    Measurement modes for overlay
    2.
    发明授权

    公开(公告)号:US11346657B2

    公开(公告)日:2022-05-31

    申请号:US17068328

    申请日:2020-10-12

    Abstract: An overlay metrology tool may include an illumination source, illumination optics to illuminate an overlay target having periodic features with one or more illumination beams, collection optics to direct diffracted light from the periodic features of the overlay target to a detector, an adjustable pupil mask located at a pupil plane, and a controller. The adjustable pupil mask may include one or more individually-addressable control zones distributed across the one or more portions of the pupil plane to provide an adjustable pupil transmissivity distribution. The controller may direct the adjustable pupil mask to provide a selected pupil transmissivity distribution corresponding to a selected overlay metrology recipe, where the selected pupil transmissivity distribution corresponds to a selected configuration of the one or more control zones providing transmission of a selected set of diffraction orders from the target to the detector.

    METROLOGY TARGET FOR SCANNING METROLOGY

    公开(公告)号:US20210311401A1

    公开(公告)日:2021-10-07

    申请号:US17354307

    申请日:2021-06-22

    Abstract: A metrology system may include a controller coupled to a scanning metrology tool that images a sample in motion along a scan direction. The controller may receive an image of a metrology target on the sample from the scanning metrology tool, where the metrology target comprises a first measurement group including cells distributed along a transverse direction orthogonal to the scan direction, and a second measurement group separated from the first measurement group along the scan direction including cells distributed along the transverse direction. The controller may further generate at least a first metrology measurement based on at least one of the cells in the first measurement group, and generate at least a second metrology measurement based on at least one of the cells in the second measurement group.

    SYSTEM AND METHOD FOR MEASURING MISREGISTRATION OF SEMICONDUCTOR DEVICE WAFERS UTILIZING INDUCED TOPOGRAPHY

    公开(公告)号:US20210191279A1

    公开(公告)日:2021-06-24

    申请号:US16647102

    申请日:2020-02-14

    Abstract: A system and method of measuring misregistration in the manufacture of semiconductor device wafers is disclosed. A first layer and the second layer are imaged in a first orientation with a misregistration metrology tool employing light having at least one first wavelength that causes images of both the first periodic structure and the second periodic structure to appear in at least two planes that are mutually separated by a perpendicular distance greater than 0.2 μm. The first layer and the second layer are imaged in a second orientation with the misregistration metrology tool employing light having the at least one first wavelength that causes images of both the first periodic structure and the second periodic structure to appear in the at least two planes. At least one parameter of the misregistration metrology tool is adjusted based on the resulting analysis.

    Method of measuring misregistration in the manufacture of topographic semiconductor device wafers

    公开(公告)号:US11281112B2

    公开(公告)日:2022-03-22

    申请号:US16647092

    申请日:2020-02-14

    Abstract: A method of measuring misregistration in the manufacture of semiconductor device wafers including providing a multilayered semiconductor device wafer including at least a first layer and a second layer including at least one misregistration measurement target including a first periodic structure formed together with the first layer having a first pitch and a second periodic structure formed together with the second layer having a second pitch, imaging the first layer and the second layer at a depth of focus and using light having at least one first wavelength that causes images of both the first layer and the second layer to appear in at least one plane within the depth of focus and quantifying offset in the at least one plane between the images of the first layer and the second layer, thereby to calculate misregistration of the first layer and the second layer.

    Measurement Modes for Overlay
    6.
    发明申请

    公开(公告)号:US20210364279A1

    公开(公告)日:2021-11-25

    申请号:US17068328

    申请日:2020-10-12

    Abstract: An overlay metrology tool may include an illumination source, illumination optics to illuminate an overlay target having periodic features with one or more illumination beams, collection optics to direct diffracted light from the periodic features of the overlay target to a detector, an adjustable pupil mask located at a pupil plane, and a controller. The adjustable pupil mask may include one or more individually-addressable control zones distributed across the one or more portions of the pupil plane to provide an adjustable pupil transmissivity distribution. The controller may direct the adjustable pupil mask to provide a selected pupil transmissivity distribution corresponding to a selected overlay metrology recipe, where the selected pupil transmissivity distribution corresponds to a selected configuration of the one or more control zones providing transmission of a selected set of diffraction orders from the target to the detector.

    Metrology target for scanning metrology

    公开(公告)号:US11073768B2

    公开(公告)日:2021-07-27

    申请号:US16598146

    申请日:2019-10-10

    Abstract: A metrology system may include a controller coupled to a scanning metrology tool that images a sample in motion along a scan direction. The controller may receive an image of a metrology target on the sample from the scanning metrology tool, where the metrology target comprises a first measurement group including cells distributed along a transverse direction orthogonal to the scan direction, and a second measurement group separated from the first measurement group along the scan direction including cells distributed along the transverse direction. The controller may further generate at least a first metrology measurement based on at least one of the cells in the first measurement group, and generate at least a second metrology measurement based on at least one of the cells in the second measurement group.

    Sensitive Optical Metrology in Scanning and Static Modes

    公开(公告)号:US20210096061A1

    公开(公告)日:2021-04-01

    申请号:US16586504

    申请日:2019-09-27

    Abstract: A metrology system may include a metrology tool to selectively perform metrology measurements in a static mode in which one or more metrology targets on a sample are stationary during a measurement or a scanning mode in which one or more metrology targets are in motion during a measurement, and a controller communicatively coupled to the translation stage and at least one of the one or more detectors. The controller may receive locations of metrology targets on the sample to be inspected, designate the metrology targets for inspection with the static mode or the scanning mode, direct the metrology tool to perform metrology measurements on the metrology targets in the static mode or the scanning mode based on the designation, and generate metrology data for the sample based on the metrology measurements on the metrology targets.

    Method of measuring misregistration in the manufacture of topographic semiconductor device wafers

    公开(公告)号:US11880141B2

    公开(公告)日:2024-01-23

    申请号:US17673131

    申请日:2022-02-16

    Abstract: A method of measuring misregistration in the manufacture of semiconductor device wafers including providing a multilayered semiconductor device wafer including at least a first layer and a second layer including at least one misregistration measurement target including a first periodic structure formed together with the first layer having a first pitch and a second periodic structure formed together with the second layer having a second pitch, imaging the first layer and the second layer at a depth of focus and using light having at least one first wavelength that causes images of both the first layer and the second layer to appear in at least one plane within the depth of focus and quantifying offset in the at least one plane between the images of the first layer and the second layer, thereby to calculate misregistration of the first layer and the second layer.

Patent Agency Ranking