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公开(公告)号：US12253805B2
公开(公告)日：2025-03-18
申请号：US17885909
申请日：2022-08-11
Applicant: KLA Corporation
Inventor： Vladimir Levinski , Daria Negri , Amnon Manassen
Abstract: An overlay metrology target may include grating-over-grating structures formed from a lower grating structure with a first coarse pitch in a first sample layer and an upper grating structure with a second coarse pitch in a second sample layer, where the upper and lower grating structures overlap on the sample. At least one of the upper grating structure or the lower grating structure may include features with a fine pitch smaller than a wavelength of an illumination beam and arranged to rotate first-order diffraction of the illumination beam associated with at least one of the first or second coarse pitches with respect to at least one of specular reflection from a top surface of the sample or zero-order diffraction from the one or more grating structures. Overlay between the first and second layers of the sample is determinable from an image of the grating structures based on the first-order diffraction.
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公开(公告)号：US20240427252A1
公开(公告)日：2024-12-26
申请号：US18212049
申请日：2023-06-20
Applicant: KLA Corporation
Inventor： Amnon Manassen , Yonatan Vaknin
Abstract: An overlay metrology system may include an illumination source to generate illumination including two or more spectral bands having two or more center wavelengths. The system may include an optical sub-system to illuminate and image a sample, where the sample in accordance with the metrology recipe includes one or more cells with grating-over-grating structures formed as overlapping gratings with different pitches in different sample layers. The system may include collection pupil components to exclusively pass, for each of the two or more center wavelengths, two diffraction lobes from each of the different pitches of the grating-over-grating structures. A controller may receive images of the sample from the detectors generated in accordance with the metrology recipe and generate overlay measurements between at least some of the different layers of the sample based on the images.
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公开(公告)号：US20240329543A1
公开(公告)日：2024-10-03
申请号：US18742869
申请日：2024-06-13
Applicant: KLA Corporation
Inventor： Andrew V. Hill , Vladimir Levinski , Daria Negri , Amnon Manassen , Yonatan Vaknin
CPC classification number: G03F7/70633 , G01B11/272 , G03F7/70683 , G03F7/706849 , G03F7/706851
Abstract: An overlay metrology system may include illumination sources configured to generate one or more pairs of mutually coherent illumination beams and illumination optics to direct the pairs of illumination beams to an overlay target at common altitude incidence angles and symmetrically opposed azimuthal incidence angles, where the overlay target includes two or more grating structures distributed along one or more measurement directions. The system may further include imaging optics to image the overlay target onto detectors when implementing the metrology recipe, where an image of a particular one of the two or more grating structures includes a sinusoidal interference pattern generated exclusively with a single non-zero diffraction order of light from each of the illumination beams within the particular one of the pairs of illumination beams. The system may further include a controller to determine overlay measurements based on images of the overlay target.
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公开(公告)号：US12092966B2
公开(公告)日：2024-09-17
申请号：US18386846
申请日：2023-11-03
Applicant: KLA Corporation
Inventor： Amnon Manassen , Nadav Gutman , Frank Laske , Andrei V. Shchegrov
CPC classification number: G03F7/706845 , G01B11/272 , G01B15/00 , G03F7/70655 , G01B2210/56
Abstract: A system and method are disclosed for generating metrology measurements with second sub-system such as an optical sub-system. The method may include performing a training and a run-time operation. The training may include receiving first metrology data for device features from the first metrology sub-system (e.g., optical); generating first metrology measurements (e.g., critical dimensions, etc.); binning the device features into two or more device bins based on the first metrology measurements; and identifying representative metrology targets for the two or more device bins based on distributions of the first metrology measurements. The run-time operation may include receiving run-time metrology data (e.g., optical) of the representative metrology targets; and generating run-time metrology measurements based on the run-time metrology data.
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公开(公告)号：US12001148B2
公开(公告)日：2024-06-04
申请号：US18114451
申请日：2023-02-27
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
CPC classification number: G03F7/70633 , G02B27/283 , G03F7/70641 , H04N23/56
Abstract: A method includes generating a sequence of images of a semiconductor wafer from first and second detectors. The first detector images the wafer with first imaging parameters and the second detector images the wafer with second imaging parameters. The first or second imaging parameters are varied across the sequence of images to provide variation at sites across the wafer. The method includes providing a metric indicative of center-of-symmetry variations of first and second target features as a function of the varied imaging parameters based on the sequence of images. The method includes identifying a landscape of values of the varied image parameters for which the metric are below a predefined limit. The method includes generating a recipe for metrology measurements in which the varied imaging parameters are set to values within the landscape. The method includes generating metrology measurements from a production wafer based on the recipe.
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Patent Agency Ranking
公开(公告)号：US20240159585A1
公开(公告)日：2024-05-16
申请号：US17986592
申请日：2022-11-14
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Yonatan Vaknin , Avner Safrani
CPC classification number: G01J1/0407 , G03F7/70316
Abstract: An overlay metrology system may include an objective lens, illumination optics to illuminate an overlay target including a first grating with a first pitch on a first sample layer and a second grating with a second pitch on a second sample layer, where the first and second sample layers are separated by a layer separation distance greater than a depth of field of the objective lens. The system may further include collection optics with a radially-varying defocus distribution to compensate for the layer separation distance such that the first and second gratings are simultaneously in focus on the detector.
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公开(公告)号：US20230384237A1
公开(公告)日：2023-11-30
申请号：US17955385
申请日：2022-09-28
Applicant: KLA Corporation
Inventor： Nireekshan K. Reddy , Vladimir Levinski , Amnon Manassen
CPC classification number: G01N21/9501 , G03F7/70633 , G03F7/705
Abstract: A metrology system may arrange metrology measurements for a plurality of metrology targets distributed in a plurality of fields on one or samples into a signal vector, where the metrology measurements associated with the metrology targets in each of the plurality of fields are grouped within the signal vector. The system may further decompose the signal vector into reconstruction vectors associated with different spectral components of the signal vector. The system may further classify a subset of the reconstruction vectors as components of a metrology model, where a sum of the components corresponds to a metrology model describing the metrology measurements on the one or more samples. The system may further generate control signals to control one or more processing tools based on the metrology model.
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公开(公告)号：US11531275B1
公开(公告)日：2022-12-20
申请号：US17411539
申请日：2021-08-25
Applicant: KLA Corporation
Inventor： Andrew V. Hill , Amnon Manassen , Dmitry Gorelik
Abstract: An overlay metrology tool may include an illumination source to generate a first illumination beam distribution with a first linear polarization and a second illumination beam distribution with a second linear polarization orthogonal to the first linear polarization, an illumination sub-system to sequentially illuminate two or more cell pairs of an overlay target on a sample having orthogonally oriented grating-over-grating structures, a collection sub-system with two collection channels to capture collected light from an illuminated cell pair and filtering optics to direct light from different cells in an illuminated cell pair to different collection channels for detection. The tool may further include a controller to generate separate overlay measurements for orthogonally-oriented grating-over-grating structures in the two or more cell pairs.
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公开(公告)号：US11526086B2
公开(公告)日：2022-12-13
申请号：US17195507
申请日：2021-03-08
Applicant: KLA Corporation
Inventor： Andrew V. Hill , Amnon Manassen
IPC: G03F7/20 , G01N21/95 , G01N21/956
Abstract: A metrology tool may include an illumination sub-system to illuminate sample within two or more acquisition fields with two or more illumination beams, where the two or more acquisition fields are distributed along a scan direction in a non-overlapping configuration, and where a translation stage translates a metrology target on the sample along the scan direction sequentially through the two or more acquisition fields. The metrology tool may further include an imaging sub-system to image the two or more acquisition fields while the sample is scanned along the scan direction. The imaging sub-system may include a field-repositioning optical relay to relay images of the two or more acquisition fields to a scanning detector including one or more pixel columns distributed along a column direction, where the field-repositioning optical relay positions the images of the two or more acquisition fields on the scanning detector along the column direction.
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公开(公告)号：US20220317577A1
公开(公告)日：2022-10-06
申请号：US17219869
申请日：2021-03-31
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
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