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1.发明公开公开(公告)号：US20230328351A1
公开(公告)日：2023-10-12
申请号：US17716757
申请日：2022-04-08
Applicant: KLA Corporation
Inventor： Yonatan Vaknin , Andrew V. Hill , Amnon Manassen
CPC classification number: G06T7/0004 , G06T7/73 , H04N5/2256 , G03F7/70633 , G06T2207/10152
Abstract: An optical metrology system may include an overlay metrology tool for characterizing an overlay target on a sample, where the overlay target includes first-direction periodic features in a first set of layers of the sample, and second-direction periodic features in a second set of layers of the sample. The overlay metrology tool may simultaneously illuminate the overlay target with first illumination beams and second illumination beams and may further generate images of the overlay target based on diffraction of the first illumination beams and the second illumination beams by the overlay target, where diffraction orders of the first illumination beams contribute to resolved image formation of only the first-direction periodic features, and where diffraction orders of the second illumination beams contribute to resolved image formation of only the second-direction periodic features. The system may further generate overlay measurements along the first and second measurement directions based on the images.
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公开(公告)号：US20240337952A1
公开(公告)日：2024-10-10
申请号：US18372444
申请日：2023-09-25
Applicant: KLA Corporation
Inventor： Itay Gdor , Yonatan Vaknin , Nireekshan K. Reddy , Alon Alexander Volfman , Iftach Galon , Jordan Pio , Yuval Lubashevsky , Nickolai Isakovitch , Andrew V. Hill , Oren Lahav , Daria Negri , Vladimir Levinski
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/7015
Abstract: A method may include receiving time-varying interference signals from two or more photodetectors associated with a first exposure structure and a second exposure structure in one or more cells as an overlay target is scanned in accordance with a metrology recipe, where the first exposure structure and the second exposure structure form a side-by-side grating, where the side-by-side grating includes one or more diffraction gratings, where at least one diffraction grating is a non-overlapping side-by-side grating, where the first exposure structure is arranged adjacent to the second exposure structure, where the side-by-side grating is periodic along the scan direction. The method may further include determining an overlay error between one of the first exposure structure and the second exposure structure of the sample based on the time-varying interference signals, where the time-varying interference signals corresponding to the non-overlapping first exposure structure and second exposure structure are synchronized.
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公开(公告)号：US12066322B2
公开(公告)日：2024-08-20
申请号：US17986592
申请日：2022-11-14
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Yonatan Vaknin , Avner Safrani
CPC classification number: G01J1/0407 , G03F7/70316
Abstract: An overlay metrology system may include an objective lens, illumination optics to illuminate an overlay target including a first grating with a first pitch on a first sample layer and a second grating with a second pitch on a second sample layer, where the first and second sample layers are separated by a layer separation distance greater than a depth of field of the objective lens. The system may further include collection optics with a radially-varying defocus distribution to compensate for the layer separation distance such that the first and second gratings are simultaneously in focus on the detector.
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公开(公告)号：US20250093786A1
公开(公告)日：2025-03-20
申请号：US18368795
申请日：2023-09-15
Applicant: KLA Corporation
Inventor： Yonatan Vaknin , Amnon Manassen , Andrew V. Hill
IPC: G03F7/00
Abstract: A measurement system may include an illumination source configured to generate one or more illumination beams and one or more objective lenses. One or more of the objective lenses may be configured as illumination objective lenses to direct illumination from the illumination source to one or more targets on a sample. One or more of the objective lenses may be configured as collection objective lenses, where each of the collection objective lenses is configured to collect a selected diffraction order of the illumination from the sample. The system may further include one or more detectors, each configured to image the sample based on at least one of the selected diffraction orders from at least one of the collection objective lenses and a controller to generate measurements of the one or more targets on the sample based on one or more images from the detectors.
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5.发明授权公开(公告)号：US11800212B1
公开(公告)日：2023-10-24
申请号：US17716757
申请日：2022-04-08
Applicant: KLA Corporation
Inventor： Yonatan Vaknin , Andrew V. Hill , Amnon Manassen
IPC: H04N23/56 , G03F7/00 , G01N21/956
CPC classification number: H04N23/56 , G01N21/956 , G03F7/70633 , G03F7/70653 , G03F7/706849 , G03F7/706851
Abstract: An optical metrology system may include an overlay metrology tool for characterizing an overlay target on a sample, where the overlay target includes first-direction periodic features in a first set of layers of the sample, and second-direction periodic features in a second set of layers of the sample. The overlay metrology tool may simultaneously illuminate the overlay target with first illumination beams and second illumination beams and may further generate images of the overlay target based on diffraction of the first illumination beams and the second illumination beams by the overlay target, where diffraction orders of the first illumination beams contribute to resolved image formation of only the first-direction periodic features, and where diffraction orders of the second illumination beams contribute to resolved image formation of only the second-direction periodic features. The system may further generate overlay measurements along the first and second measurement directions based on the images.
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Patent Agency Ranking
公开(公告)号：US11592755B2
公开(公告)日：2023-02-28
申请号：US17219869
申请日：2021-03-31
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
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公开(公告)号：US20240427252A1
公开(公告)日：2024-12-26
申请号：US18212049
申请日：2023-06-20
Applicant: KLA Corporation
Inventor： Amnon Manassen , Yonatan Vaknin
Abstract: An overlay metrology system may include an illumination source to generate illumination including two or more spectral bands having two or more center wavelengths. The system may include an optical sub-system to illuminate and image a sample, where the sample in accordance with the metrology recipe includes one or more cells with grating-over-grating structures formed as overlapping gratings with different pitches in different sample layers. The system may include collection pupil components to exclusively pass, for each of the two or more center wavelengths, two diffraction lobes from each of the different pitches of the grating-over-grating structures. A controller may receive images of the sample from the detectors generated in accordance with the metrology recipe and generate overlay measurements between at least some of the different layers of the sample based on the images.
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公开(公告)号：US20240329543A1
公开(公告)日：2024-10-03
申请号：US18742869
申请日：2024-06-13
Applicant: KLA Corporation
Inventor： Andrew V. Hill , Vladimir Levinski , Daria Negri , Amnon Manassen , Yonatan Vaknin
CPC classification number: G03F7/70633 , G01B11/272 , G03F7/70683 , G03F7/706849 , G03F7/706851
Abstract: An overlay metrology system may include illumination sources configured to generate one or more pairs of mutually coherent illumination beams and illumination optics to direct the pairs of illumination beams to an overlay target at common altitude incidence angles and symmetrically opposed azimuthal incidence angles, where the overlay target includes two or more grating structures distributed along one or more measurement directions. The system may further include imaging optics to image the overlay target onto detectors when implementing the metrology recipe, where an image of a particular one of the two or more grating structures includes a sinusoidal interference pattern generated exclusively with a single non-zero diffraction order of light from each of the illumination beams within the particular one of the pairs of illumination beams. The system may further include a controller to determine overlay measurements based on images of the overlay target.
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公开(公告)号：US12001148B2
公开(公告)日：2024-06-04
申请号：US18114451
申请日：2023-02-27
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
CPC classification number: G03F7/70633 , G02B27/283 , G03F7/70641 , H04N23/56
Abstract: A method includes generating a sequence of images of a semiconductor wafer from first and second detectors. The first detector images the wafer with first imaging parameters and the second detector images the wafer with second imaging parameters. The first or second imaging parameters are varied across the sequence of images to provide variation at sites across the wafer. The method includes providing a metric indicative of center-of-symmetry variations of first and second target features as a function of the varied imaging parameters based on the sequence of images. The method includes identifying a landscape of values of the varied image parameters for which the metric are below a predefined limit. The method includes generating a recipe for metrology measurements in which the varied imaging parameters are set to values within the landscape. The method includes generating metrology measurements from a production wafer based on the recipe.
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公开(公告)号：US20240159585A1
公开(公告)日：2024-05-16
申请号：US17986592
申请日：2022-11-14
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Yonatan Vaknin , Avner Safrani
CPC classification number: G01J1/0407 , G03F7/70316
Abstract: An overlay metrology system may include an objective lens, illumination optics to illuminate an overlay target including a first grating with a first pitch on a first sample layer and a second grating with a second pitch on a second sample layer, where the first and second sample layers are separated by a layer separation distance greater than a depth of field of the objective lens. The system may further include collection optics with a radially-varying defocus distribution to compensate for the layer separation distance such that the first and second gratings are simultaneously in focus on the detector.
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