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公开(公告)号：US11592755B2
公开(公告)日：2023-02-28
申请号：US17219869
申请日：2021-03-31
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
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公开(公告)号：US20230400780A1
公开(公告)日：2023-12-14
申请号：US18114451
申请日：2023-02-27
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
CPC classification number: G03F7/70633 , G02B27/283 , G03F7/70641 , H04N23/56
Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
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公开(公告)号：US12001148B2
公开(公告)日：2024-06-04
申请号：US18114451
申请日：2023-02-27
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
CPC classification number: G03F7/70633 , G02B27/283 , G03F7/70641 , H04N23/56
Abstract: A method includes generating a sequence of images of a semiconductor wafer from first and second detectors. The first detector images the wafer with first imaging parameters and the second detector images the wafer with second imaging parameters. The first or second imaging parameters are varied across the sequence of images to provide variation at sites across the wafer. The method includes providing a metric indicative of center-of-symmetry variations of first and second target features as a function of the varied imaging parameters based on the sequence of images. The method includes identifying a landscape of values of the varied image parameters for which the metric are below a predefined limit. The method includes generating a recipe for metrology measurements in which the varied imaging parameters are set to values within the landscape. The method includes generating metrology measurements from a production wafer based on the recipe.
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公开(公告)号：US20220317577A1
公开(公告)日：2022-10-06
申请号：US17219869
申请日：2021-03-31
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
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