公开(公告)号：US20250137920A1

公开(公告)日：2025-05-01

申请号：US18919048

申请日：2024-10-17

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Peter Paquet ,  Yingpin Wu ,  Fang-Jyun Yeh ,  Suryanarayanan Ganesan ,  Jordan Pio ,  Shankar Krishnan ,  Taher Kagalwala ,  Derrick A. Shaughnessy ,  Yan Zhang ,  Stilian Pandev ,  Min-Yeong Moon

IPC: G01N21/21 ,  G01N21/95

Abstract: A metrology system may include a spectroscopic metrology sub-system and a controller, the controller including one or more processors configured to execute program instructions configured to cause the one or more processors to: generate a tool-induced shift (TIS) model of a training sample by the metrology sub-system comprising: receiving training data from metrology measurements of the training sample, the training data comprising spectral data associated with at least one off-diagonal Mueller matrix element generated by one or more first measurements of the training sample at a first azimuthal angle and one or more second measurements of the training sample at a second azimuthal angle, deriving overlay spectra data and TIS spectra data from the training data, decomposing the overlay spectra data and the TIS spectra data, and inferring a TIS signature for the training sample; and to remove the TIS signature from a test sample.

公开(公告)号：US11513085B2

公开(公告)日：2022-11-29

申请号：US17013618

申请日：2020-09-06

Applicant: KLA Corporation

Inventor： Barry Blasenheim ,  Joseph A. Di Regolo ,  Yan Zhang ,  Robert Press ,  Huy Nguyen

IPC: G01N23/201 ,  G03F7/26 ,  G03F7/20 ,  G01N21/956

Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

公开(公告)号：US20210262950A1

公开(公告)日：2021-08-26

申请号：US17013618

申请日：2020-09-06

Applicant: KLA Corporation

Inventor： Barry Blasenheim ,  Joseph A. Di Regolo ,  Yan Zhang ,  Robert Press ,  Huy Nguyen

IPC: G01N23/201 ,  G03F7/20

Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.