公开(公告)号：US11513085B2

公开(公告)日：2022-11-29

申请号：US17013618

申请日：2020-09-06

Applicant: KLA Corporation

Inventor： Barry Blasenheim ,  Joseph A. Di Regolo ,  Yan Zhang ,  Robert Press ,  Huy Nguyen

IPC: G01N23/201 ,  G03F7/26 ,  G03F7/20 ,  G01N21/956

Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

公开(公告)号：US20210262950A1

公开(公告)日：2021-08-26

申请号：US17013618

申请日：2020-09-06

Applicant: KLA Corporation

Inventor： Barry Blasenheim ,  Joseph A. Di Regolo ,  Yan Zhang ,  Robert Press ,  Huy Nguyen

IPC: G01N23/201 ,  G03F7/20

Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.