公开(公告)号：US12217997B2

公开(公告)日：2025-02-04

申请号：US18156131

申请日：2023-01-18

Applicant: KLA CORPORATION

Inventor： Benjamin James Thomas Clarke ,  Asaf Wiseman ,  Tzachi Pressburger ,  Michael Brisman ,  Joseph A. Di Regolo

IPC: H01L21/68 ,  B25J15/04 ,  B25J19/00 ,  G01B11/06 ,  H01L21/687

Abstract: The system includes a robot interface disposed on a robot arm, and an end effector configured to selectively couple to the robot arm via the robot interface. The end effector includes an upper jaw, a lower jaw, and a pair of arms configured to carry a substrate. The upper jaw and the lower jaw are spaced apart in a first direction and biased together, and the pair of arms are spaced apart in a second direction orthogonal to the first direction. When the end effector is coupled to the robot arm, the robot interface is disposed between the upper jaw and the lower jaw. To exchange the end effector, the upper jaw and the lower jaw can be separated to release the robot interface.

公开(公告)号：US11513085B2

公开(公告)日：2022-11-29

申请号：US17013618

申请日：2020-09-06

Applicant: KLA Corporation

Inventor： Barry Blasenheim ,  Joseph A. Di Regolo ,  Yan Zhang ,  Robert Press ,  Huy Nguyen

IPC: G01N23/201 ,  G03F7/26 ,  G03F7/20 ,  G01N21/956

Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

公开(公告)号：US20210262950A1

公开(公告)日：2021-08-26

申请号：US17013618

申请日：2020-09-06

Applicant: KLA Corporation

Inventor： Barry Blasenheim ,  Joseph A. Di Regolo ,  Yan Zhang ,  Robert Press ,  Huy Nguyen

IPC: G01N23/201 ,  G03F7/20

Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.