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公开(公告)号:US11268901B2
公开(公告)日:2022-03-08
申请号:US15930379
申请日:2020-05-12
Applicant: KLA Corporation
Inventor: Barry Blasenheim , Noam Sapiens , Michael Friedmann , Pablo Rovira
Abstract: A collection system of a semiconductor metrology tool includes a chuck to support a target from which an optical beam is reflected and a spectrometer to receive the reflected optical beam. The collection system also includes a plurality of aperture masks arranged in a rotatable sequence about an axis parallel to an optical axis. Each aperture mask of the plurality of aperture masks is rotatable into and out of the reflected optical beam between the chuck and the spectrometer to selectively mask the reflected optical beam.
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公开(公告)号:US20200271569A1
公开(公告)日:2020-08-27
申请号:US15930379
申请日:2020-05-12
Applicant: KLA Corporation
Inventor: Barry Blasenheim , Noam Sapiens , Michael Friedmann , Pablo Rovira
Abstract: A collection system of a semiconductor metrology tool includes a chuck to support a target from which an optical beam is reflected and a spectrometer to receive the reflected optical beam. The collection system also includes a plurality of aperture masks arranged in a rotatable sequence about an axis parallel to an optical axis. Each aperture mask of the plurality of aperture masks is rotatable into and out of the reflected optical beam between the chuck and the spectrometer to selectively mask the reflected optical beam.
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公开(公告)号:US11513085B2
公开(公告)日:2022-11-29
申请号:US17013618
申请日:2020-09-06
Applicant: KLA Corporation
Inventor: Barry Blasenheim , Joseph A. Di Regolo , Yan Zhang , Robert Press , Huy Nguyen
IPC: G01N23/201 , G03F7/26 , G03F7/20 , G01N21/956
Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.
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公开(公告)号:US20210262950A1
公开(公告)日:2021-08-26
申请号:US17013618
申请日:2020-09-06
Applicant: KLA Corporation
Inventor: Barry Blasenheim , Joseph A. Di Regolo , Yan Zhang , Robert Press , Huy Nguyen
IPC: G01N23/201 , G03F7/20
Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.
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公开(公告)号:US20200302965A1
公开(公告)日:2020-09-24
申请号:US16821192
申请日:2020-03-17
Applicant: KLA Corporation
Inventor: Jun Wang , Yaolei Zheng , Chunxia Li , Changfei Yan , Lansheng Dong , Yang Zhou , Hai-Yang You , Haijing Peng , Jianou Shi , Rui Ni , Shankar Krishnan , David Y. Wang , Walter H. Johnson , Barry Blasenheim
IPC: G11B11/105
Abstract: A laser beam is directed through a transmissive axicon telescope or a reflective axicon telescope such as in a magneto-optic Kerr effect metrology system. With the transmissive axicon telescope, a Gaussian beam profile is directed through a first axicon lens and a second axicon lens. The first axicon lens and second axicon lens transfer the Gaussian beam profile of the laser beam to a hollowed laser ring. The laser beam with a hollowed laser ring can be directed through a Schwarzschild reflective objective. With the reflective axicon telescope, the laser beam is directed through two conical mirrors that are fully reflective. One of the conical mirrors defines a central hole that the laser beam passes through.
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