Variable aperture mask
    1.
    发明授权

    公开(公告)号:US11268901B2

    公开(公告)日:2022-03-08

    申请号:US15930379

    申请日:2020-05-12

    Abstract: A collection system of a semiconductor metrology tool includes a chuck to support a target from which an optical beam is reflected and a spectrometer to receive the reflected optical beam. The collection system also includes a plurality of aperture masks arranged in a rotatable sequence about an axis parallel to an optical axis. Each aperture mask of the plurality of aperture masks is rotatable into and out of the reflected optical beam between the chuck and the spectrometer to selectively mask the reflected optical beam.

    Variable Aperture Mask
    2.
    发明申请

    公开(公告)号:US20200271569A1

    公开(公告)日:2020-08-27

    申请号:US15930379

    申请日:2020-05-12

    Abstract: A collection system of a semiconductor metrology tool includes a chuck to support a target from which an optical beam is reflected and a spectrometer to receive the reflected optical beam. The collection system also includes a plurality of aperture masks arranged in a rotatable sequence about an axis parallel to an optical axis. Each aperture mask of the plurality of aperture masks is rotatable into and out of the reflected optical beam between the chuck and the spectrometer to selectively mask the reflected optical beam.

    Measurement and control of wafer tilt for x-ray based metrology

    公开(公告)号:US11513085B2

    公开(公告)日:2022-11-29

    申请号:US17013618

    申请日:2020-09-06

    Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

    Measurement And Control Of Wafer Tilt For X-Ray Based Metrology

    公开(公告)号:US20210262950A1

    公开(公告)日:2021-08-26

    申请号:US17013618

    申请日:2020-09-06

    Abstract: Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

Patent Agency Ranking