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    PLUME STEERING
    62.
    发明申请
    PLUME STEERING 审中-公开
    PLUME转向

    公开(公告)号：US20120080308A1

    公开(公告)日：2012-04-05

    申请号：US12898424

    申请日：2010-10-05

    Applicant: Ikuya Kameyama

    Inventor： Ikuya Kameyama

    IPC: C23C14/34

    CPC classification number: C23C14/3407 ,  C23C14/221 ,  C23C14/3442 ,  C23C14/505 ,  H01J37/3053 ,  H01J37/3178 ,  H01J2237/024 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/30472 ,  H01J2237/3146

    Abstract: Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example ion beam grid and a second example ion beam grid each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids. The beamlet steering as a whole creates a non-elliptical current density distribution within a cross-section of an ion beam and generates a sputtered material plume that deposits a uniform distribution of sputtered material onto a rotating substrate assembly.

    Abstract translation: 溅射材料的非椭圆形离子束和羽流可以在目标靶上产生相对均匀的磨损图案，并将溅射材料均匀沉积在衬底组件上。 溅射材料的非椭圆形离子束和羽流撞击旋转的目标靶和基底组件。 第一示例性离子束格栅和第二示例性离子束格栅各自具有在相应孔之间具有偏移的孔的图案。 偏移的数量和方向决定了通过第一和第二离子束网格中的相应孔转向各个子束的数量和方向。 作为整体的小梁转向在离子束的横截面内产生非椭圆形电流密度分布，并产生溅射材料羽流，其将溅射材料的均匀分布沉积到旋转的基底组件上。

    SYSTEM AND METHOD FOR REMOVING ORGANIC RESIDUE FROM A CHARGED PARTICLE BEAM SYSTEM
    63.
    发明申请
    SYSTEM AND METHOD FOR REMOVING ORGANIC RESIDUE FROM A CHARGED PARTICLE BEAM SYSTEM 审中-公开
    从充电粒子束系统中去除有机残留物的系统和方法

    公开(公告)号：US20120080056A1

    公开(公告)日：2012-04-05

    申请号：US13323572

    申请日：2011-12-12

    Applicant: Hong XIAO

    Inventor： Hong XIAO

    IPC: B08B7/00 ,  B08B9/00 ,  B08B5/00

    CPC classification number: H01J37/28 ,  H01J37/02 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/024

    Abstract: A system and method for removing an organic residue from a charged particle beam system includes a conduit that is coupled to the column and is for adding oxygen to the column. A heater is coupled to the column and is for increasing the temperature in the column. A pump is coupled to the column and is for removing a gas from the chamber, wherein the gas is a byproduct of a chemical reaction of the organic residue and the oxygen.

    Abstract translation: 用于从带电粒子束系统中去除有机残余物的系统和方法包括与柱相连并用于向柱中加入氧的导管。 加热器连接到塔上，用于增加塔中的温度。 泵连接到塔上，用于从室中除去气体，其中气体是有机残余物和氧的化学反应的副产物。

    Cleaning of an extraction aperture of an ion source
    64.
    发明授权
    Cleaning of an extraction aperture of an ion source 有权
    清洁离子源的提取孔

    公开(公告)号：US08071956B2

    公开(公告)日：2011-12-06

    申请号：US12720933

    申请日：2010-03-10

    Applicant: Craig R. Chaney ,  Alexander S. Perel ,  Leo V. Klos

    Inventor： Craig R. Chaney ,  Alexander S. Perel ,  Leo V. Klos

    IPC: H01J37/28

    CPC classification number: H01J27/08 ,  B08B1/008 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/024

    Abstract: An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

    Abstract translation: 离子源包括限定具有提取孔的电弧室的电弧室壳体，以及擦拭器组件，其包括在处于停放位置的位于电弧室外部的擦拭器，并且构造成从停放位置驱动到操作位置以清洁提取孔 。 用于离子源的擦拭器组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室外部并且从停放位置驱动到操作位置以清洁离子源的提取孔。

    METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER
    66.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER 有权
    用于控制离子植入物中光束电流均匀性的方法和装置

    公开(公告)号：US20090314962A1

    公开(公告)日：2009-12-24

    申请号：US12143144

    申请日：2008-06-20

    Applicant: Rajesh DORAI ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Wilhelm P. Platow

    Inventor： Rajesh DORAI ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Wilhelm P. Platow

    IPC: H01J37/08 ,  G02B5/00

    CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

    Abstract: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

    Abstract translation: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段，用于移动一个或多个段。 通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

    CHARGING-FREE ELECTRON BEAM CURE OF DIELECTRIC MATERIAL
    67.
    发明申请
    CHARGING-FREE ELECTRON BEAM CURE OF DIELECTRIC MATERIAL 失效
    无电子电子束光电材料

    公开(公告)号：US20090181534A1

    公开(公告)日：2009-07-16

    申请号：US12013799

    申请日：2008-01-14

    Applicant: Christos D. Dimitrakopoulos ,  Kam L. Lee ,  Robert L. Wisnieff

    Inventor： Christos D. Dimitrakopoulos ,  Kam L. Lee ,  Robert L. Wisnieff

    IPC: H01L21/4763 ,  B05C11/00

    CPC classification number: H01L21/76825 ,  B29C71/04 ,  B29C2035/0877 ,  H01J37/026 ,  H01J37/317 ,  H01J2237/0044 ,  H01J2237/024 ,  H01J2237/047 ,  H01J2237/3156 ,  H01L21/3105 ,  H01L21/76835

    Abstract: An ultra low-k dielectric material layer is formed on a semiconductor substrate. In one embodiment, a grid of wires is placed at a distance above a top surface of the ultra low-k dielectric material layer and is electrically biased such that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. In another embodiment, a polymeric conductive layer is formed directly on the ultra low-k dielectric material layer and is electrically biased so that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. By maintaining the total electron emission coefficient at 1.0, charging of the substrate is avoided, thus protecting any device on the substrate from any adverse changes in electrical characteristics.

    Abstract translation: 在半导体基板上形成超低k电介质材料层。 在一个实施例中，电线格栅放置在超低k电介质材料层的顶表面上方的距离处，并被电偏置，使得在电子束固化中使用的电子的能量下，总电子发射系数为1.0 超低k电介质材料层。 在另一个实施例中，聚合物导电层直接形成在超低k电介质材料层上并被电偏置，使得在超低k电介质的电子束固化中使用的电子能量下，总电子发射系数变为1.0 材料层。 通过将总电子发射系数保持在1.0，避免了衬底的充电，从而保护衬底上的任何器件免受电特性的任何不利变化。

    TECHNIQUES FOR REDUCING CONTAMINATION DURING ION IMPLANTATION
    69.
    发明申请
    TECHNIQUES FOR REDUCING CONTAMINATION DURING ION IMPLANTATION 失效
    在离子植入时减少污染的技术

    公开(公告)号：US20080149856A1

    公开(公告)日：2008-06-26

    申请号：US11615386

    申请日：2006-12-22

    Applicant: Russell J. LOW

    Inventor： Russell J. LOW

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/31711

    Abstract: Techniques for reducing contamination during ion implantation is disclosed. In one particular exemplary embodiment, the techniques may be realized by an apparatus for reducing contamination during ion implantation. The apparatus may comprise a platen to hold a workpiece for ion implantation by an ion beam. The apparatus may also comprise a mask, located in front of the platen, to block the ion beam and at least a portion of contamination ions from reaching a first portion of the workpiece during ion implantation of a second portion of the workpiece. The apparatus may further comprise a control mechanism, coupled to the platen, to reposition the workpiece to expose the first portion of the workpiece for ion implantation.

    Abstract translation: 公开了用于减少离子注入期间污染的技术。 在一个特定的示例性实施例中，可以通过用于减少离子注入期间的污染的装置来实现这些技术。 该装置可以包括用于通过离子束保持用于离子注入的工件的压板。 该设备还可以包括位于压板前面的掩模，以在工件的第二部分的离子注入期间阻挡离子束并且至少一部分污染物离子到达工件的第一部分。 该装置还可以包括耦合到压板的控制机构，以重新定位工件以暴露工件的第一部分用于离子注入。

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