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    Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
    2.
    发明申请
    Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems 有权
    离子束角度测量系统和采用不同角度槽阵列的离子注入系统的方法

    公开(公告)号：US20070138412A1

    公开(公告)日：2007-06-21

    申请号：US11313319

    申请日：2005-12-21

    申请人： Brian Freer

    发明人： Brian Freer

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578

    摘要： An angle measurement system for measuring angles of incidence for ion beams during ion implantation includes a varied angle slot array and an array of charge measurement devices located downstream of the varied angle slot array. The varied angle slot array includes slots formed within a structure from an entrance surface to an exit surface. Each of the slots has a varied acceptance angle range. The array of charge measurement devices are individually associated with the slots and can measure charge or beam current for beamlets that pass through the slots. These measurements and the varied or different acceptance angle ranges can then be employed to determine a measured angle of incidence and/or angular content for an ion beam.

    摘要翻译： 用于测量离子注入期间离子束入射角度的角度测量系统包括位于不同角度槽阵列下游的不同角度槽阵列和电荷测量装置阵列。 不同的角槽阵列包括形成在从入射表面到出射表面的结构内的槽。 每个槽具有不同的接受角度范围。 电荷测量装置的阵列分别与时隙相关联，并且可以测量通过狭槽的小束的电荷或束电流。 然后可以采用这些测量和不同或不同的接受角范围来确定离子束的测量入射角和/或角度含量。

    METHODS AND SYSTEMS FOR TRAPPING ION BEAM PARTICLES AND FOCUSING AN ION BEAM
    4.
    发明申请
    METHODS AND SYSTEMS FOR TRAPPING ION BEAM PARTICLES AND FOCUSING AN ION BEAM 有权
    用于捕获离子束颗粒和聚焦离子束的方法和系统

    公开(公告)号：US20070295901A1

    公开(公告)日：2007-12-27

    申请号：US11739934

    申请日：2007-04-25

    申请人： Peter Kellerman ,  Victor Benveniste ,  Alexander Perel ,  Brian Freer ,  Michael Graf

    发明人： Peter Kellerman ,  Victor Benveniste ,  Alexander Perel ,  Brian Freer ,  Michael Graf

    IPC分类号： B01D59/44

    CPC分类号： H01J37/3171 ,  H01J37/12 ,  H01J2237/022 ,  H01J2237/049

    摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.

    摘要翻译： 一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收 离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面 所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压， 其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面 所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场 并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

    Ion beam angle measurement systems and methods for ion implantation systems
    5.
    发明申请
    Ion beam angle measurement systems and methods for ion implantation systems 有权
    离子束角度测量系统和离子注入系统的方法

    公开(公告)号：US20070145298A1

    公开(公告)日：2007-06-28

    申请号：US11299593

    申请日：2005-12-12

    申请人： Brian Freer ,  Alexander Perel

    发明人： Brian Freer ,  Alexander Perel

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/30472 ,  H01J2237/31703

    摘要： Angle of incidence measurements along an axis of ion implantation are obtained by employing positive and negative slot structures. The positive slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of an ion beam having a selected range of angles in a positive direction. The negative slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of the ion beam having the selected range of angles in a negative direction. A first beam measurement mechanism measures beam current of the positive portion to obtain a positive angle beam current measurement. A second beam measurement mechanism measures beam current of the negative portion to obtain a negative angle beam current measurement. An analyzer component employs the positive angle beam current measurement and the negative angle beam current measurement to determine a measured angle of incidence.

    摘要翻译： 通过采用正和负槽结构，可获得离子注入轴的入射角测量。 正槽结构在其间具有入口开口，出口开口和狭槽轮廓，其在正方向上获得具有选定角度范围的离子束的一部分。 负槽结构在其间具有进入开口，出口开口和狭槽轮廓，其间获得具有在负方向上的选定角度范围的离子束的一部分。 第一光束测量机构测量正部分的光束电流以获得正角度束电流测量。 第二光束测量机构测量负部分的光束电流以获得负角度束电流测量。 分析器组件采用正角度束电流测量和负角度束电流测量来确定测量的入射角。