公开(公告)号：US08309937B2

公开(公告)日：2012-11-13

申请号：US12898351

申请日：2010-10-05

申请人： Ikuya Kameyama

发明人： Ikuya Kameyama

IPC分类号： H01J37/147 ,  B23P17/04

CPC分类号： H01J37/147 ,  H01J37/09 ,  H01J2237/036 ,  H01J2237/0453 ,  Y10T29/49

摘要： A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids.

摘要翻译： 耦合到离子束源的放电室的电网组件被配置用于以圆形不对称地确定的转向角度控制从放电室发射的离子束。 栅格组件包括至少第一栅格和第二栅格，其具有基本圆形的孔图案，其中每个栅格包括彼此相邻定位的孔。 第二格栅的多个孔相对于第一格栅中的对应的孔定位成偏移。 由于第二栅格中的孔中的偏移，穿过偏移孔的离子被静电吸引到下游偏移孔的最近的周向部分。 因此，通过偏移孔的离子的轨迹被改变。 小梁通过预定的不对称角度转向。 预定的转向角取决于孔偏移，施加到网格的电压以及网格之间的距离。

公开(公告)号：US08374830B2

公开(公告)日：2013-02-12

申请号：US12777034

申请日：2010-05-10

申请人： Ikuya Kameyama ,  Daniel E. Siegfried

发明人： Ikuya Kameyama ,  Daniel E. Siegfried

IPC分类号： G06F17/50 ,  H01J37/147

CPC分类号： G06F17/50 ,  H01J27/024

摘要： A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.

摘要翻译： 用于在离子束网格中改变孔位置或尺寸或两者的设计过程包括识别要修改的控制网格; 获得网格图案的变化因子; 并使用变化因子来生成新的网格图案。 变化因子是孔位置变化因子或孔直径变化因子中的一种或两种。 还包括具有孔位置或尺寸特征的离子束栅格，或者由控制栅格孔位置或尺寸或两者的变化因子修改限定。

公开(公告)号：US20120080609A1

公开(公告)日：2012-04-05

申请号：US12898351

申请日：2010-10-05

申请人： Ikuya Kameyama

发明人： Ikuya Kameyama

IPC分类号： H01J37/147 ,  B23P17/04

CPC分类号： H01J37/147 ,  H01J37/09 ,  H01J2237/036 ,  H01J2237/0453 ,  Y10T29/49

摘要： A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids.

摘要翻译： 耦合到离子束源的放电室的电网组件被配置用于以圆形不对称地确定的转向角度控制从放电室发射的离子束。 栅格组件包括至少第一栅格和第二栅格，其具有基本圆形的孔图案，其中每个栅格包括彼此相邻定位的孔。 第二格栅的多个孔相对于第一格栅中的对应的孔定位成偏移。 由于第二栅格中的孔中的偏移，穿过偏移孔的离子被静电吸引到下游偏移孔的最近的周向部分。 因此，通过偏移孔的离子的轨迹被改变。 小梁通过预定的不对称角度转向。 预定的转向角取决于孔偏移，施加到网格的电压以及网格之间的距离。

公开(公告)号：US20120080307A1

公开(公告)日：2012-04-05

申请号：US12898281

申请日：2010-10-05

申请人： Ikuya Kameyama

发明人： Ikuya Kameyama

IPC分类号： C23C14/46

CPC分类号： C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3146 ,  H01J2237/3151 ,  H01J2237/31701

摘要： An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece.

摘要翻译： 离子束系统包括具有大致椭圆形图案的孔的栅格组件，用于引导包括多个子束的离子束以产生离子束，其中离子束横截面的离子电流密度分布是非椭圆形的 。 离子电流密度分布可以具有与离子束的横截面的两个正交轴中的一个对称的单个峰。 或者，对于离子束的横截面的两个正交轴中的另一个，单个峰可以是不对称的。 在另一个实施方案中，离子电流密度分布可以在横截面的两个正交轴之一的相对侧上具有两个峰。 将离子束引导到旋转的目标工件上，在距离目标工件的中心等距离的点处产生基本均匀的旋转积分的平均离子电流密度。

公开(公告)号：US20100219358A1

公开(公告)日：2010-09-02

申请号：US12777034

申请日：2010-05-10

申请人： Ikuya Kameyama ,  Daniel E. Siegfried

发明人： Ikuya Kameyama ,  Daniel E. Siegfried

IPC分类号： H01J3/00

CPC分类号： G06F17/50 ,  H01J27/024

摘要： A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.

摘要翻译： 用于在离子束网格中改变孔位置或尺寸或两者的设计过程包括识别要修改的控制网格; 获得网格图案的变化因子; 并使用变化因子来生成新的网格图案。 变化因子是孔位置变化因子或孔直径变化因子中的一种或两种。 还包括具有孔位置或尺寸特征的离子束栅格，或者由控制栅格孔位置或尺寸或两者的变化因子修改限定。

公开(公告)号：US20120080308A1

公开(公告)日：2012-04-05

申请号：US12898424

申请日：2010-10-05

申请人： Ikuya Kameyama

发明人： Ikuya Kameyama

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/221 ,  C23C14/3442 ,  C23C14/505 ,  H01J37/3053 ,  H01J37/3178 ,  H01J2237/024 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/30472 ,  H01J2237/3146

摘要： Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example ion beam grid and a second example ion beam grid each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids. The beamlet steering as a whole creates a non-elliptical current density distribution within a cross-section of an ion beam and generates a sputtered material plume that deposits a uniform distribution of sputtered material onto a rotating substrate assembly.

摘要翻译： 溅射材料的非椭圆形离子束和羽流可以在目标靶上产生相对均匀的磨损图案，并将溅射材料均匀沉积在衬底组件上。 溅射材料的非椭圆形离子束和羽流撞击旋转的目标靶和基底组件。 第一示例性离子束格栅和第二示例性离子束格栅各自具有在相应孔之间具有偏移的孔的图案。 偏移的数量和方向决定了通过第一和第二离子束网格中的相应孔转向各个子束的数量和方向。 作为整体的小梁转向在离子束的横截面内产生非椭圆形电流密度分布，并产生溅射材料羽流，其将溅射材料的均匀分布沉积到旋转的基底组件上。

公开(公告)号：US07716021B2

公开(公告)日：2010-05-11

申请号：US11395354

申请日：2006-03-31

申请人： Ikuya Kameyama ,  Daniel E. Siegfried

发明人： Ikuya Kameyama ,  Daniel E. Siegfried

IPC分类号： G06F17/50

CPC分类号： G06F17/50 ,  H01J27/024

摘要： A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.

摘要翻译： 用于在离子束网格中改变孔位置或尺寸或两者的设计过程包括识别要修改的控制网格; 获得网格图案的变化因子; 并使用变化因子来生成新的网格图案。 变化因子是孔位置变化因子或孔直径变化因子中的一种或两种。 还包括具有孔位置或尺寸特征的离子束栅格，或者由控制栅格孔位置或尺寸或两者的变化因子修改限定。

公开(公告)号：US20060253510A1

公开(公告)日：2006-11-09

申请号：US11395354

申请日：2006-03-31

申请人： Ikuya Kameyama ,  Daniel Siegfried

发明人： Ikuya Kameyama ,  Daniel Siegfried

IPC分类号： G06F15/00

CPC分类号： G06F17/50 ,  H01J27/024

摘要： A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.