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    Polyester polymerization catalyst and method for producing polyester using the same
    61.
    发明授权
    Polyester polymerization catalyst and method for producing polyester using the same 有权
    聚酯聚合催化剂及其制备方法

    公开(公告)号：US08816041B2

    公开(公告)日：2014-08-26

    申请号：US13121350

    申请日：2009-08-18

    Applicant: Yoichiro Tanaka ,  Eri Hatano ,  Keisuke Honda

    Inventor： Yoichiro Tanaka ,  Eri Hatano ,  Keisuke Honda

    IPC: C08G63/00 ,  B01J23/00

    CPC classification number: D01F6/62 ,  C08G63/183 ,  C08G63/85

    Abstract: Provided are a polyester polymerization catalyst with which the generation of foreign materials caused by the catalyst or mold pollution at the time of molding are reduced and polyesters having remarkably superior thermal stability and color tone can be obtained.Provided is a polyester polymerization catalyst produced by the reaction of a titanium compound and a mannitol in a molar ratio of titanium atom to mannitol of from 1:1 to 1:3. A method for producing a polyester employs the polyester polymerization catalyst.

    Abstract translation: 提供一种聚酯聚合催化剂，其在模塑时由催化剂或模具污染引起的异物的产生减少，并且可以获得具有非常优异的热稳定性和色调的聚酯。 提供了通过钛化合物和甘露醇与钛原子与甘露醇的摩尔比为1:1至1:3的反应制备的聚酯聚合催化剂。 聚酯的制造方法采用聚酯聚合催化剂。

    Methods of forming pillars for memory cells using sequential sidewall patterning
    62.
    发明授权
    Methods of forming pillars for memory cells using sequential sidewall patterning 有权
    使用顺序侧壁图案形成记忆单元柱的方法

    公开(公告)号：US08741696B2

    公开(公告)日：2014-06-03

    申请号：US12911944

    申请日：2010-10-26

    Applicant: Roy E. Scheuerlein ,  Christopher J. Petti ,  Yoichiro Tanaka

    Inventor： Roy E. Scheuerlein ,  Christopher J. Petti ,  Yoichiro Tanaka

    IPC: H01L21/82

    CPC classification number: G11C5/06 ,  H01L21/0337 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/2481 ,  H01L2924/0002 ,  Y10S257/909 ,  H01L2924/00

    Abstract: The present invention provides apparatus, methods, and systems for fabricating memory structures methods of forming pillars for memory cells using sequential sidewall patterning. The invention includes forming first features from a first template layer disposed above a memory layer stack; forming first sidewall spacers adjacent the first features; forming second features that extend in a first direction in a mask layer by using the first sidewall spacers as a hardmask; depositing a second template layer on the mask layer; forming third features from the second template layer; forming second sidewall spacers adjacent the third features; and forming fourth features that extend in a second direction in the mask layer by using the second sidewall spacers as a hardmask. Numerous additional aspects are disclosed.

    Abstract translation: 本发明提供用于制造存储器结构的装置，方法和系统，该方法使用顺序侧壁图案化形成用于存储单元的支柱。 本发明包括从设置在存储层堆叠上方的第一模板层形成第一特征; 形成邻近所述第一特征的第一侧壁间隔物; 通过使用第一侧壁间隔物作为硬掩模形成在掩模层中沿第一方向延伸的第二特征; 在掩模层上沉积第二模板层; 从第二模板层形成第三特征; 形成邻近所述第三特征的第二侧壁间隔物; 并且通过使用第二侧壁间隔件作为硬掩模形成在掩模层中沿第二方向延伸的第四特征。 公开了许多附加方面。

    METHODS OF FORMING PILLARS FOR MEMORY CELLS USING SEQUENTIAL SIDEWALL PATTERNING
    63.
    发明申请
    METHODS OF FORMING PILLARS FOR MEMORY CELLS USING SEQUENTIAL SIDEWALL PATTERNING 有权
    使用顺序方向图形成存储器细胞的支架的方法

    公开(公告)号：US20110095338A1

    公开(公告)日：2011-04-28

    申请号：US12911944

    申请日：2010-10-26

    Applicant: Roy E. Scheuerlein ,  Christopher J. Petti ,  Yoichiro Tanaka

    Inventor： Roy E. Scheuerlein ,  Christopher J. Petti ,  Yoichiro Tanaka

    IPC: H01L27/08 ,  G03F1/00

    CPC classification number: G11C5/06 ,  H01L21/0337 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/2481 ,  H01L2924/0002 ,  Y10S257/909 ,  H01L2924/00

    Abstract: The present invention provides apparatus, methods, and systems for fabricating memory structures methods of forming pillars for memory cells using sequential sidewall patterning. The invention includes forming first features from a first template layer disposed above a memory layer stack; forming first sidewall spacers adjacent the first features; forming second features that extend in a first direction in a mask layer by using the first sidewall spacers as a hardmask; depositing a second template layer on the mask layer; forming third features from the second template layer; forming second sidewall spacers adjacent the third features; and forming fourth features that extend in a second direction in the mask layer by using the second sidewall spacers as a hardmask. Numerous additional aspects are disclosed.

    Abstract translation: 本发明提供用于制造存储器结构的装置，方法和系统，该方法使用顺序侧壁图案化形成用于存储单元的支柱。 本发明包括从设置在存储层堆叠上方的第一模板层形成第一特征; 形成邻近所述第一特征的第一侧壁间隔物; 通过使用第一侧壁间隔物作为硬掩模形成在掩模层中沿第一方向延伸的第二特征; 在掩模层上沉积第二模板层; 从第二模板层形成第三特征; 形成邻近所述第三特征的第二侧壁间隔物; 并且通过使用第二侧壁间隔件作为硬掩模形成在掩模层中沿第二方向延伸的第四特征。 公开了许多附加方面。

    Method for implementing diffusion barrier in 3D memory
    64.
    发明授权
    Method for implementing diffusion barrier in 3D memory 有权
    在3D存储器中实现扩散屏障的方法

    公开(公告)号：US07629253B2

    公开(公告)日：2009-12-08

    申请号：US11731579

    申请日：2007-03-30

    Applicant: Yoichiro Tanaka

    Inventor： Yoichiro Tanaka

    IPC: H01L21/44

    CPC classification number: H01L27/1021 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: One or more diffusion barriers are formed around one or more conductors in a three dimensional or 3D memory cell. The diffusion barriers allow the conductors to comprise very low resistivity materials, such as copper, that may otherwise out diffuse into surrounding areas, particularly at elevated processing temperatures. Utilizing lower resistivity materials allows device dimension to be reduced by mitigating increases in resistance that occur when the size of the conductors is reduced. As such, more cells can be produced over a given area, thus increasing the density and storage capacity of a resulting memory array.

    Abstract translation: 在三维或三维存储单元中的一个或多个导体周围形成一个或多个扩散屏障。 扩散阻挡层允许导体包括非常低电阻率的材料，例如铜，其可能会散布到周围区域，特别是在升高的处理温度下。 利用较低电阻率的材料允许通过减少当导体尺寸减小时发生的电阻增加来减小器件尺寸。 因此，可以在给定区域上产生更多的单元，从而增加所得到的存储器阵列的密度和存储容量。

    LINER FOR TUNGSTEN/SILICON DIOXIDE INTERFACE IN MEMORY
    66.
    发明申请
    LINER FOR TUNGSTEN/SILICON DIOXIDE INTERFACE IN MEMORY 有权
    内存中的TUNGSTEN /二氧化硅界面

    公开(公告)号：US20090085087A1

    公开(公告)日：2009-04-02

    申请号：US11863734

    申请日：2007-09-28

    Applicant: Yoichiro Tanaka ,  Steven J. Radigan ,  Usha Raghuram

    Inventor： Yoichiro Tanaka ,  Steven J. Radigan ,  Usha Raghuram

    IPC: H01L29/788 ,  H01L21/4763

    CPC classification number: H01L27/101 ,  H01L27/1021

    Abstract: A semiconductor wafer assembly includes a base of dielectric. A layer of silicon is deposited thereover. A metal hard mask is deposited over the silicon. A dielectric hard mask is deposited over the metal hard mask. Photoresist is deposited over the dielectric hard mask, whereby a plurality of sacrificial columns is formed from the layer of metal hard mask through the photoresist such that the sacrificial columns extend out from the silicon layer. An interface layer is disposed between the layer of conductive material and the layer of hard mask to enhance adhesion between each of the plurality of sacrificial columns and the layer of conductive material to optimize the formation of junction diodes out of the silicon by preventing the plurality of sacrificial columns from being detached from the layer of silicon prematurely due to the sacrificial columns peeling or falling off.

    Abstract translation: 半导体晶片组件包括电介质基体。 一层硅沉积在其上。 金属硬掩模沉积在硅上。 在金属硬掩模上沉积电介质硬掩模。 光致抗蚀剂沉积在电介质硬掩模上，由此通过光致抗蚀剂从金属硬掩模层形成多个牺牲柱，使得牺牲柱从硅层延伸出来。 界面层设置在导电材料层和硬掩模层之间，以增强多个牺牲柱和导电材料层之间的粘附力，以通过防止多个 牺牲柱由于牺牲柱脱落或脱落而过早地与硅层分离。

    Patterned disk medium for vertical magnetic recording, and magnetic disk drive with the medium
    67.
    发明授权
    Patterned disk medium for vertical magnetic recording, and magnetic disk drive with the medium 失效
    用于垂直磁记录的图形磁盘介质，以及带介质的磁盘驱动器

    公开(公告)号：US07443626B2

    公开(公告)日：2008-10-28

    申请号：US11181958

    申请日：2005-07-15

    Applicant: Makoto Asakura ,  Yoichiro Tanaka ,  Akira Kikitsu

    Inventor： Makoto Asakura ,  Yoichiro Tanaka ,  Akira Kikitsu

    IPC: G11B15/14

    CPC classification number: B82Y10/00 ,  G11B5/59633 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11B5/865

    Abstract: A patterned disk medium includes a disk-shaped flat substrate including a first surface and a second surface located an opposite side of the first surface. First servo pattern areas including portions provided with magnetic members and portions provided with no magnetic members are provided on the first surface. Second servo pattern areas including portions provided with magnetic members and portions provided with no magnetic members are provided on the second surface. The magnetic members of the first and second servo pattern areas are magnetized in a direction perpendicular to the first and second surfaces. The magnetic polarity of the surfaces of the magnetic members of the second pattern areas differs from that of the surfaces of the magnetic members of the first pattern areas.

    Abstract translation: 图案化的盘介质包括盘状平坦基板，其包括第一表面和位于第一表面相对侧的第二表面。 在第一表面上设置有包括设置有磁性部件的部分和没有磁性部件的部分的第一伺服图案区域。 第二伺服模式区域包括设置有磁性构件的部分和没有磁性构件的部分设置在第二表面上。 第一和第二伺服图案区域的磁性构件在垂直于第一和第二表面的方向上被磁化。 第二图案区域的磁性构件的表面的磁极性不同于第一图案区域的磁性构件的表面的磁极性。

    Disk device
    68.
    发明申请
    Disk device 审中-公开
    磁盘设备

    公开(公告)号：US20060221494A1

    公开(公告)日：2006-10-05

    申请号：US11387985

    申请日：2006-03-24

    Applicant: Satoru Katsumata ,  Masayuki Takagishi ,  Yoichiro Tanaka

    Inventor： Satoru Katsumata ,  Masayuki Takagishi ,  Yoichiro Tanaka

    IPC: G11B17/00

    CPC classification number: G11B33/12 ,  G11B25/043

    Abstract: According to one embodiment, a case of a magnetic disk device has a sheet-shaped base with an open upper surface formed of a soft magnetic material, and a sheet-shaped top cover with an open upper surface formed of a soft magnetic material and attached to the base. A disk-shaped recording medium arranged in the case comprises a substrate, a soft magnetic backing layer formed on the substrate, and a magnetic recording layer formed by being overlapped on the soft magnetic backing layer and having perpendicular magnetic anisotropy. The base is formed in a thickness of 0.5 mm or more and the top cover is formed in a thickness of 0.25 mm or more, respectively. The base and the top cover have a relative permeability of 700 or more and a saturation flux density of 1.4 (T) or more.

    Abstract translation: 根据一个实施例，磁盘装置的壳体具有由软磁性材料形成的敞开的上表面的片状基底和由软磁性材料形成的开放上表面的片状顶盖 到基地 布置在壳体中的盘形记录介质包括基板，形成在基板上的软磁背衬层和通过重叠在软磁背衬层上并具有垂直磁各向异性形成的磁记录层。 基底形成为0.5mm以上的厚度，顶盖分别形成为0.25mm以上的厚度。 基底和顶盖的相对磁导率为700以上，饱和磁通密度为1.4（T）以上。

    Magnetic disk and magnetic disk device provided with the same
    70.
    发明申请
    Magnetic disk and magnetic disk device provided with the same 审中-公开
    磁盘与磁盘装置相同

    公开(公告)号：US20060014053A1

    公开(公告)日：2006-01-19

    申请号：US11179668

    申请日：2005-07-13

    Applicant: Makoto Asakura ,  Yoichiro Tanaka

    Inventor： Makoto Asakura ,  Yoichiro Tanaka

    IPC: G11B5/706

    CPC classification number: B82Y10/00 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11B5/865

    Abstract: A magnetic disk includes a flat disk-shaped substrate having a center hole and a recording region formed on an obverse and/or reverse surface of the substrate and patterned depending on the presence of a magnetic material. The recording region has a data region pattern and a plurality of servo region patterns formed substantially in circular arcs which radially extend from the center hole side of the substrate to an outer peripheral edge portion thereof and divide the data region pattern in a plurality of parts in the circumferential direction of the substrate. Each servo region pattern has a radius larger than that of the outmost periphery of the substrate and a center of the circular arc on a circular path concentric with the substrate. The data region pattern and each of the servo region patterns have different magnetic occupancies and different optical reflection factors.

    Abstract translation: 磁盘包括具有中心孔的平坦盘状基板和形成在基板的正面和/或反面上的记录区域，并根据磁性材料的存在进行图案化。 记录区域具有数据区域图案和形成为大致圆弧的多个伺服区域图案，其从基板的中心孔侧径向延伸到其外周边缘部分，并将数据区域图案分割成多个部分 基板的圆周方向。 每个伺服区域图案的半径大于基板的最外边缘的半径，圆弧的中心与基板同心的圆形路径。 数据区域图案和每个伺服区域图案具有不同的磁占空比和不同的光学反射因子。

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