摘要:
The present invention provides apparatus, methods, and systems for fabricating memory lines and structures using double sidewall patterning for four times half pitch relief patterning. The invention includes forming features from a first template layer disposed above a substrate, forming half-pitch sidewall spacers adjacent the features, forming smaller features in a second template layer by using the half-pitch sidewall spacers as a hardmask, forming quarter-pitch sidewall spacers adjacent the smaller features, and forming conductor features from a conductor layer by using the quarter-pitch sidewall spacers as a hardmask. Numerous additional aspects are disclosed.
摘要:
One or more diffusion barriers are formed around one or more conductors in a three dimensional or 3D memory cell. The diffusion barriers allow the conductors to comprise very low resistivity materials, such as copper, that may otherwise out diffuse into surrounding areas, particularly at elevated processing temperatures. Utilizing lower resistivity materials allows device dimension to be reduced by mitigating increases in resistance that occur when the size of the conductors is reduced. As such, more cells can be produced over a given area, thus increasing the density and storage capacity of a resulting memory array.
摘要:
The present invention provides apparatus, methods, and systems for fabricating memory lines and structures using double sidewall patterning for four times half pitch relief patterning. The invention includes forming features from a first template layer disposed above a substrate, forming half-pitch sidewall spacers adjacent the features, forming smaller features in a second template layer by using the half-pitch sidewall spacers as a hardmask, forming quarter-pitch sidewall spacers adjacent the smaller features, and forming conductor features from a conductor layer by using the quarter-pitch sidewall spacers as a hardmask. Numerous additional aspects are disclosed.
摘要:
A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.
摘要:
A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not required to be so. The barrier layer may be sputtered from a target of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer may be formed of an alloy of copper and ruthenium in contact to a barrier layer over the dielectric.
摘要:
A magnetic recording media has a magnetic layer formed on a substrate and includes data regions including a magnetic pattern constituting a recoding track and servo regions including magnetic patterns used as address bits, the data regions and the servo regions being contained in a plane of the magnetic layer. In a case where two magnetic patterns used as address bits on the servo regions corresponding to two adjacent recording tracks are arranged in such a manner that one corner of one of the magnetic patterns is closest to one corner of the other, the corners of the two magnetic patterns are substantially joined together.
摘要:
A shield assembly for protecting the walls of a plasma sputter reactor from deposition while allowing high flow of processing gas into the processing space of the reactor without the plasma leaking out of the processing space. The shield assembly is particularly useful for reactive sputtering, for example, of TiN or TaN, in which large amounts of nitrogen need to flow into the chamber. The shield assembly includes a primary shield positioned inside of the chamber sidewalls and protecting the sidewalls and preferably also the bottom wall and sides of the pedestal. Multiple holes are formed in the primary shield to pass gas input through a gas inlet in the chamber walls outside of the primary shield. A baffle shield in positioned inside of the primary shield and covers the holes in the primary shield with a gap between the two shields. The baffle shield extends only partway along the primary shield so that gap communicates with the processing space of the reactor. Preferably, both the primary and baffle shield are grounded to no electric field exists in the gap. The shield assembly is particularly useful for magnetron sputter reactors in which an axial magnetic field is generated parallel to the side portions of the primary shield.
摘要:
A vehicle meter self-diagnosis apparatus includes cross coil movements 11, 13, 15, and 17, drivers 10, 12, 14, 16, and 18, a driver control circuit 20, a ROM 22 into which indication adjustment information of the cross coil movements 11, 13, 15, and 17 is written, a CPU 8, and a self-diagnosis control circuit section 30 being started by a reset switch 32 for driving the drivers 10, 12, 14, 16, and 18 and diagnosing the cross coil movements 11, 13, 15, and 17.
摘要:
A magnetic recording/reproducing device comprises a recording head for magnetically recording a signal on a magnetic recording medium along a predetermined track, and a reproducing head member including a spin valve typed magnetoresistive element and bias magnetic applying means, associated with the spin valve typed magnetoresistive element, for applying a bias magnetic field to the spin valve typed magnetoresistive element, the reproducing head member for changing a sensitivity distribution in a track width direction based on a distance between the reproducing head and the recording head, and an angle difference between the direction of the reproducing head and the extending direction of the track.
摘要:
A magnetic disk drive has a magnetic head for recording or reproducing information on or from a magnetic recording medium. The magnetic recording medium includes a magnetic recording layer for information recording which has magnetic anisotropy in a direction perpendicular to a surface of the recording medium, a soft magnetic under layer under the magnetic recording layer and having soft magnetic properties, and a non-magnetic substrate. The magnetic disk drive records a signal with a skew angle on at least some tracks. A main pole has a size satisfying pL