公开(公告)号：US20060251872A1

公开(公告)日：2006-11-09

申请号：US11124611

申请日：2005-05-05

Applicant: Jenn Wang ,  Wei Wang ,  Ronjun Wang ,  Yoichiro Tanaka ,  Hua Chung ,  Hong Zhang ,  Jick Yu ,  Praburam Gopalraja ,  Jianming Fu

Inventor： Jenn Wang ,  Wei Wang ,  Ronjun Wang ,  Yoichiro Tanaka ,  Hua Chung ,  Hong Zhang ,  Jick Yu ,  Praburam Gopalraja ,  Jianming Fu

IPC: B32B3/00

CPC classification number: B32B15/018 ,  C23C14/3414 ,  H01L21/2855 ,  H01L21/76844 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  H01L2924/00

Abstract: A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not required to be so. The barrier layer may be sputtered from a target of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer may be formed of an alloy of copper and ruthenium in contact to a barrier layer over the dielectric.

Abstract translation: 用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。 阻挡层包括难熔贵金属合金如钌/钽合金的导电金属，其可以是无定形的，尽管不需要这样。 阻挡层可以从类似组成的靶溅射。 阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。 铜高贵种子层可以由铜和钌的合金形成，与电介质上的阻挡层接触。