公开(公告)号：US20160334342A1

公开(公告)日：2016-11-17

申请号：US15153543

申请日：2016-05-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: G01N21/95

CPC classification number: H04N5/3722 ,  G01N21/956 ,  G01N2201/12

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

Abstract translation: 通过对像素的电阻控制栅极的中心区域施加更多的负的控制电压，并对栅极的端部施加更多的正的控制电压来实现线性传感器中的像素孔径尺寸调整。 这些控制电压使得电阻控制栅极产生将在像素的感光区域的选定部分中产生的光电子驱动到用于后续测量的电荷累积区域中的电场，并驱动在像素的光敏区域的其他部分中产生的光电子 从电荷累积区域进行随后的丢弃或同时读出。 系统利用光学器件将从不同角度或不同位置接收的光引导到每个像素的光敏区域的相应不同部分。 选择性地启动多个孔径控制电极以收集/测量从窄范围或宽范围的角度或位置接收的光，从而实现快速的图像数据调整。

公开(公告)号：US09496425B2

公开(公告)日：2016-11-15

申请号：US13792166

申请日：2013-03-10

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/88 ,  H01L31/0216 ,  G01N21/95 ,  G01N21/956 ,  H01L27/146

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

Abstract translation: 用于短波长光和带电粒子的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

公开(公告)号：US09478402B2

公开(公告)日：2016-10-25

申请号：US14198175

申请日：2014-03-05

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  David L. Brown ,  John Fielden

IPC: H01L31/11 ,  H01L31/167 ,  H01J40/06 ,  H01L31/103 ,  H01J43/08

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

公开(公告)号：US20160099540A1

公开(公告)日：2016-04-07

申请号：US14872890

申请日：2015-10-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  Yujun Deng ,  Vladimir Dribinski ,  John Fielden ,  Jidong Zhang

IPC: H01S3/109 ,  H01S3/108 ,  H01S5/40 ,  G01N21/88 ,  H01S5/00 ,  G02B21/10 ,  G02B21/16 ,  G02B21/36 ,  H01S3/10 ,  H01S5/06

CPC classification number: H01F17/0006 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02B21/10 ,  G02B21/16 ,  G02B21/361 ,  G02F1/353 ,  G02F2001/3507 ,  G02F2001/354 ,  H01F17/04 ,  H01F27/292 ,  H01S3/0092 ,  H01S3/10007 ,  H01S3/10084 ,  H01S3/1083 ,  H01S3/109 ,  H01S5/0071 ,  H01S5/0085 ,  H01S5/0604 ,  H01S5/4012

Abstract: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.

Abstract translation: 用于在大约183nm的输出波长处产生激光输出光的激光组件包括基本激光器，光学参数系统（OPS），五次谐波发生器和频率混合模块。 基本激光器产生基频的基本光。 OPS以降频转换的频率产生降频转换的信号。 五次谐波发生器产生基波的五次谐波。 频率混合模块混合下变频信号和第五谐波，以产生等于五次谐波频率和下变频频率之和的频率的激光输出光。 OPS通过在下变频的频率处产生下变频的种子信号，然后将下变频的种子信号与基本光的一部分混合来产生下变频信号。 频率混合，频率转换或谐波产生中的至少一种利用退火，氘处理或氢处理的CLBO晶体。

公开(公告)号：US20150372446A1

公开(公告)日：2015-12-24

申请号：US14596738

申请日：2015-01-14

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Justin Dianhuan Liou ,  J. Joseph Armstrong ,  Yujun Deng ,  John Fielden

IPC: H01S3/10

CPC classification number: H01S3/10046 ,  G03F7/70025 ,  H01S3/005 ,  H01S3/0071 ,  H01S3/08004 ,  H01S3/08054 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/10 ,  H01S3/10061 ,  H01S2301/20 ,  H01S2301/203 ,  H01S2301/206

Abstract: A repetition rate (pulse) multiplier includes one or more beam splitters and prisms forming one or more ring cavities with different optical path lengths that delay parts of the energy of each pulse. A series of input laser pulses circulate in the ring cavities and part of the energy of each pulse leaves the system after traversing the shorter cavity path, while another part of the energy leaves the system after traversing the longer cavity path, and/or a combination of both cavity paths. By proper choice of the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitters. Some embodiments generate a time-averaged output beam profile that is substantially flat in one dimension.

Abstract translation: 重复率（脉冲）乘法器包括一个或多个分束器和棱镜，其形成具有延迟每个脉冲的能量部分的不同光程长度的一个或多个环形腔。 一系列输入激光脉冲在环形腔中循环，并且每个脉冲的能量的一部分在穿过较短腔体路径之后离开系统，而另一部分能量在穿过较长腔体路径后离开系统，和/或组合 两个腔道。 通过适当选择环腔光程长度，激光脉冲的输出系列的重复率可以是输入重复率的倍数。 可以通过选择分束器的透射和反射系数来控制输出脉冲的相对能量。 一些实施例产生在一个维度上基本上平坦的时间平均的输出光束轮廓。

公开(公告)号：US20150112624A1

公开(公告)日：2015-04-23

申请号：US14588055

申请日：2014-12-31

Applicant: KLA-Tencor Corporation

Inventor： Michael Adel ,  Leonid Poslavsky ,  John Fielden ,  John Madsen ,  Robert Peters

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

Abstract translation: 可以在半导体器件制造期间通过以下步骤来实现计量：a）对形成在部分制造的器件的层中的第一测试单元上的第一测量进行建模; b）对所述层中的第二测试单元执行第二测量; c）将第二测量中的信息馈送到第一测量的建模中; 并且在包括第一和第二测试单元的层上形成光刻图案之后，d）分别使用来自a）和b）的信息对第一和第二测试单元上的第三和第四测量进行建模。

公开(公告)号：US08929406B2

公开(公告)日：2015-01-06

申请号：US14158615

申请日：2014-01-17

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Vladimir Dribinski ,  Yujun Deng ,  John Fielden

IPC: H01S3/30 ,  H01S3/00 ,  G01N21/84

CPC classification number: H01S3/1083 ,  G01N21/84 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02F1/3534 ,  G02F1/3536 ,  G02F1/39 ,  G02F2001/3507 ,  G02F2201/16 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/0602 ,  H01S3/067

Abstract: A laser for generating an output wavelength of approximately 193.4 nm includes a fundamental laser, an optical parametric generator, a fourth harmonic generator, and a frequency mixing module. The optical parametric generator, which is coupled to the fundamental laser, can generate a down-converted signal. The fourth harmonic generator, which may be coupled to the optical parametric generator or the fundamental laser, can generate a fourth harmonic. The frequency mixing module, which is coupled to the optical parametric generator and the fourth harmonic generator, can generate a laser output at a frequency equal to a sum of the fourth harmonic and twice a frequency of the down-converted signal.

Abstract translation: 用于产生约193.4nm的输出波长的激光器包括基本激光器，光参量发生器，第四谐波发生器和混频模块。 耦合到基本激光器的光学参数发生器可以产生下变频信号。 可以耦合到光学参数发生器或基本激光器的第四谐波发生器可以产生四次谐波。 耦合到光参量发生器和第四谐波发生器的混频模块可产生频率等于下变频信号频率的四次谐波和两倍的频率的激光输出。

公开(公告)号：US08832611B2

公开(公告)日：2014-09-09

申请号：US13919577

申请日：2013-06-17

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden ,  Bin-Ming Benjamin Tsai ,  Jingjing Zhang

IPC: G06F17/50 ,  G06F19/00 ,  G06F17/10

CPC classification number: G06F17/5018 ,  G03F7/70625 ,  G06F17/10 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06F2217/16 ,  H01L22/12 ,  H01L22/20

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract translation: 提供了流程感知度量的系统和方法。 一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值，模拟使用标称值在晶片上形成的结构的一个或多个特性， 以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。

公开(公告)号：US20130313440A1

公开(公告)日：2013-11-28

申请号：US13797939

申请日：2013-03-12

Applicant: KLA-TENCOR CORPORATION

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/00 ,  G01N21/88

Abstract: Improved laser systems and associated techniques generate an ultra-violet (UV) wavelength of approximately 193.368 nm from a fundamental vacuum wavelength near 1064 nm. Preferred embodiments separate out an unconsumed portion of an input wavelength to at least one stage and redirect that unconsumed portion for use in another stage. The improved laser systems and associated techniques result in less expensive, longer life lasers than those currently being used in the industry. These laser systems can be constructed with readily-available, relatively inexpensive components.

Abstract translation: 改进的激光系统和相关技术从1064nm附近的基本真空波长产生约193.368nm的紫外（UV）波长。 优选实施例将输入波长的未消耗的部分分离成至少一个级，并将该未消耗的部分重定向以用于另一级。 改进的激光系统和相关技术导致比当前在工业中使用的激光器更便宜，更长寿命的激光器。 这些激光系统可以由容易获得的相对便宜的部件构成。

公开(公告)号：US11662646B2

公开(公告)日：2023-05-30

申请号：US15794887

申请日：2017-10-26

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Vahid Esfandyarpour ,  John Fielden ,  Baigang Zhang ,  Yinying Xiao Li

IPC: G01N21/3563 ,  G02F1/39 ,  G01N21/88 ,  G01N21/956 ,  G01N21/359 ,  G01N21/95 ,  G02F1/355 ,  H01L21/67 ,  G01N21/21

CPC classification number: G02F1/39 ,  G01N21/359 ,  G01N21/3563 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G02F1/3551 ,  G02F1/3556 ,  G02F1/3558 ,  H01L21/67253 ,  G01N2021/213 ,  G01N2021/3568 ,  G01N2021/8848

Abstract: Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed. The system may include an illumination source comprising a pump source configured to generate pump light and a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light. The system may also include a detector assembly and a set of optics configured to direct the IR radiation onto a sample and direct a portion of the IR radiation reflected and/or scattered from the sample to the detector assembly.