公开(公告)号：US10770103B1

公开(公告)日：2020-09-08

申请号：US16423910

申请日：2019-05-28

Applicant: Headway Technologies, Inc.

Inventor： Ying Liu ,  Jiun-Ting Lee ,  Min Li ,  Yuhui Tang

IPC: G11B5/60 ,  G11B5/39

Abstract: A PMR writer is disclosed wherein the trailing shield (TS) structure has a high moment trailing shield (HMTS) with a saturation (Bs) from 19 kiloGauss (kG) to 24 kG and a width (w) from 10 nm to 500 nm and is separated from the main pole (MP) trailing side at an air bearing surface (ABS) by a first write gap (WG) portion of thickness t1. A second WG portion of thickness t2 where t2>t1 adjoins the sides of the first WG portion, and has an outer side at a cross-track distance ½ w1 from a center plane that bisects the MP trailing side where w1>w. A first TS layer is formed on the HMTS and on the second WG portion, and has an outer side coplanar with the second WG portion outer side. Accordingly, there is improvement in tracks per inch capability and adjacent track interference.

公开(公告)号：US20200176024A1

公开(公告)日：2020-06-04

申请号：US16784304

申请日：2020-02-07

Applicant: Headway Technologies, Inc.

Inventor： Junjie Quan ,  Glen Garfunkel ,  Yewhee Chye ,  Kunliang Zhang ,  Min Li

IPC: G11B5/39

Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.

公开(公告)号：US10115418B2

公开(公告)日：2018-10-30

申请号：US15357070

申请日：2016-11-21

Applicant: Headway Technologies, Inc.

Inventor： Junjie Quan ,  Glen Garfunkel ,  Yewhee Chye ,  Kunliang Zhang ,  Min Li

IPC: G11B5/39

Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. Alternatively, the HM may replace a shield domain. The top shield may have various shapes including a ring shape in which the HM stabilizes a vortex magnetization. In a whole shield coupling design, the HM contacts all of the top shield bottom surface except over the sensor and junction shield. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.

公开(公告)号：US09577184B2

公开(公告)日：2017-02-21

申请号：US14712942

申请日：2015-05-15

Applicant: Headway Technologies, Inc.

Inventor： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC: H01L43/12 ,  G01R33/00 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/39 ,  H01L43/10

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, CoBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is

Abstract translation: 一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，CoBM或CoBLM制成的至少一个含B（BC）层和由CoFe，CoFeM制成的多个非B含（NBC）层的自由层， 或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。 一个实施例由（NBC / BC）n表示，其中n≥2。 第二实施例由（NBC / BC）n / NBC表示，其中n≥1。 在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。 总自由层厚度<100埃。 这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

公开(公告)号：US09460737B2

公开(公告)日：2016-10-04

申请号：US13865269

申请日：2013-04-18

Applicant: Headway Technologies, Inc.

Inventor： Yewhee Chye ,  Kunliang Zhang ,  Min Li

IPC: G11B5/39 ,  G11B5/11 ,  G11B5/115

CPC classification number: G11B5/3912 ,  G11B5/11 ,  G11B5/112 ,  G11B5/115 ,  G11B5/3909 ,  G11B5/398 ,  Y10T428/1171

Abstract: The use of supermalloy-like materials for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability.

Abstract translation: 磁性传感器的侧面和顶部屏蔽层使用超合金样材料可以提供更好的屏蔽保护，因为它们具有非常高的磁导率。

公开(公告)号：US09053713B2

公开(公告)日：2015-06-09

申请号：US13651437

申请日：2012-10-14

Applicant: Headway Technologies, Inc.

Inventor： Shengyuan Wang ,  Kunliang Zhang ,  Min Li

IPC: G11B5/127 ,  G11B5/31 ,  C23C14/02 ,  C23C14/16

CPC classification number: G11B5/1278 ,  C23C14/024 ,  C23C14/16 ,  C23C14/35 ,  C23C14/351 ,  C23C14/358 ,  G11B5/1877 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T428/1171

Abstract: A sub-structure, suitable for use as a hot seed on which to form a perpendicular magnetic main write pole, is described. It is made up of a buffer layer of atomic layer deposited alumina on which there are one or more seed layers having a body-centered cubic (bcc) crystal structure. Finally, the high coercivity magnetic film lies on the seed layer(s). It is critical that the high coercivity magnetic film be deposited at a very low deposition rate (around 1 Angstrom per second).

Abstract translation: 描述适合用作形成垂直磁性主要写入极的热种子的子结构。 它由原子层沉积的氧化铝的缓冲层组成，其上有一个或多个具有体心立方（bcc）晶体结构的种子层。 最后，高矫顽力磁性膜位于种子层上。 高矫顽磁性膜以非常低的沉积速率（约1埃每秒）沉积是至关重要的。

公开(公告)号：US09034662B2

公开(公告)日：2015-05-19

申请号：US14244923

申请日：2014-04-04

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: H01L43/12 ,  G11B5/39 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  H01L29/66 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01F1/40 ,  H01F10/193 ,  H01F10/32 ,  H01L29/82

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B5/3967 ,  H01F1/401 ,  H01F10/193 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

Abstract: The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.

Abstract translation: 通过将一个或多个磁阻增强层（MREL）插入到一个或多个磁性层的中心附近，例如内部固定（AP1）层，自旋注入层（SIL） ，场生成层（FGL）和自由层。 MREL是低带隙的层，诸如ZnO的高电子迁移率半导体或诸如Bi的半金属。 MREL还可以包括接触半导体或半金属层的底表面的第一导电层和接触半导体或半金属层的顶表面的第二导电层。

公开(公告)号：US09013016B2

公开(公告)日：2015-04-21

申请号：US14166373

申请日：2014-01-28

Applicant: Headway Technologies, Inc.

Inventor： Tong Zhao ,  Hui-Chaun Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC: H01L29/82 ,  H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/12

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/12

Abstract: A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.

Abstract translation: 描述具有大输出信号以及高信噪比的磁阻装置及其形成方法。 通过将自由层扩展成包括通过反平行耦合层彼此分离的至少三个铁磁层的多层层压体来实现这一改进的性能。 最接近过渡层的铁磁层必须包括CoFeB，而最外层需要具有低Hc以及低和负的λ值。 中心铁磁层的一种可能性是NiFe，但这不是强制性的。

公开(公告)号：US20140252517A1

公开(公告)日：2014-09-11

申请号：US13785227

申请日：2013-03-05

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Kunliang Zhang ,  Yewhee Chye ,  Min Li ,  Glen Garfunkel

IPC: H01L43/02 ,  H01L43/12

CPC classification number: G11B5/3932 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/398

Abstract: A composite side shield structure is disclosed for providing biasing to a free layer in a sensor structure. The sensor is formed between a bottom shield and top shield each having a magnetization in a first direction that is parallel to an ABS. The side shield is stabilized by an antiferromagnetic (AFM) coupling scheme wherein a bottom (first) magnetic layer is AFM coupled to a second magnetic layer which in turn is AFM coupled to an uppermost (third) magnetic layer. First and third magnetic layers each have a magnetization aligned in the first direction and are coupled to bottom and top shields, respectively, for additional stabilization. The top shield may be modified to include an AFM scheme for providing additional stabilization and guidance to magnetic moments within AFM coupled magnetic layers in the top shield, and to the third magnetic layer in the side shield.

Abstract translation: 公开了一种用于向传感器结构中的自由层提供偏压的复合侧面屏蔽结构。 传感器形成在底部屏蔽和顶部屏蔽之间，每个屏蔽和顶部屏蔽均具有平行于ABS的第一方向的磁化。 侧面屏蔽通过反铁磁（AFM）耦合方案来稳定，其中底部（第一）磁性层是AFM耦合到第二磁性层，第二磁性层又被耦合到最高（第三）磁性层。 第一和第三磁性层各自具有在第一方向上对准的磁化，并且分别耦合到底部和顶部屏蔽件以用于额外的稳定。 顶部屏蔽可以被修改为包括AFM方案，用于为顶部屏蔽中的AFM耦合磁性层内的磁矩和侧面屏蔽中的第三磁性层提供额外的稳定和引导。

公开(公告)号：US11887635B2

公开(公告)日：2024-01-30

申请号：US17856585

申请日：2022-07-01

Applicant: Headway Technologies, Inc.

Inventor： Glen Garfunkel ,  Yan Wu ,  Wenyu Chen ,  Kunliang Zhang ,  Min Li ,  Shohei Kawasaki

IPC: G11B5/39 ,  G11B5/00 ,  G11B5/48

CPC classification number: G11B5/3932 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3967 ,  G11B5/4826 ,  G11B5/4833 ,  G11B2005/0008 ,  G11B2005/0018

Abstract: A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or in another embodiment, the PM layer adjoins a backside of the top shield and has a width equal to or greater than that of the FL.