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公开(公告)号：US09437225B2
公开(公告)日：2016-09-06
申请号：US14445167
申请日：2014-07-29
Applicant: Headway Technologies, Inc.
Inventor： Junjie Quan , Kunliang Zhang , Min Li , Ruhang Ding , Yewhee Chye , Glen Garfunkel , Wenyu Chen
CPC classification number: G11B5/3912 , G11B5/127 , G11B5/3909 , G11B5/3929 , G11B2005/3996
Abstract: A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a first stack of layers including a free layer and non-magnetic spacer to reduce reader shield spacing and enable increased areal density. The AFM layer may be formed on a first pinned layer in the first stack that is partially embedded in a second pinned layer having a front portion at an air bearing surface (ABS) to improve pinning strength and avoid a morphology effect. In another embodiment, the AFM layer is embedded in a bottom shield and surrounds the sidewalls and back side of an overlying free layer in the sensor stack to reduce reader shield spacing. Pinning strength is improved because of increased contact between the AFM layer and a pinned layer. The free layer is aligned above a bottom shield center section.
Abstract translation: 公开了一种MR传感器，其具有在包括自由层和非磁性间隔物的第一层叠层之后凹入的反铁磁（AFM）层，以减少读取器屏蔽间隔并且实现增加的面密度。 AFM层可以形成在第一堆叠中的第一被钉扎层上，其部分地嵌入在空气轴承表面（ABS）处具有前部的第二钉扎层中，以改善钉扎强度并避免形态效应。 在另一个实施例中，AFM层被嵌入底部屏蔽并且围绕传感器堆叠中的上覆自由层的侧壁和背面，以减少读取器屏蔽间隔。 由于AFM层和被钉扎层之间的接触增加，固定强度得到改善。 自由层在底部屏蔽中心部分上方对准。
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公开(公告)号：US09123886B2
公开(公告)日：2015-09-01
申请号：US13785255
申请日：2013-03-05
Applicant: Headway Technologies, Inc.
Inventor： Kunliang Zhang , Min Li , Junjie Quan , Yewhee Chye
CPC classification number: H01L43/12 , G01R33/0076 , G01R33/025 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/3932
Abstract: A wrap around shield structure is disclosed for biasing a free layer in a sensor and includes a bottom shield, side shields, and top shield in which each shield element comprises a high moment layer with a magnetization saturation greater than that of Ni70Fe30. The high moment layers provide a better micro read width performance. Side shield structure includes a stack of antiferromagnetically (AFM) coupled magnetic layers on a second high moment layer. A first (lower) magnetic layer in each side shield is ferromagnetically coupled to the second high moment layer, and to a first high moment layer in the bottom shield. A third (upper) magnetic layer in each side shield is ferromagnetically coupled to a third high moment layer in the top shield for improved stabilization. Sensor sidewalls may terminate at a top surface of a reference layer to decrease reader shield spacing.
Abstract translation: 公开了一种用于偏置传感器中的自由层的环绕屏蔽结构，并且包括底部屏蔽，侧面屏蔽和顶部屏蔽，其中每个屏蔽元件包括磁化饱和度大于Ni70Fe30的高磁矩层。 高矩阵层提供更好的微读宽度性能。 侧屏蔽结构包括在第二高力矩层上的反铁磁（AFM）耦合磁层的堆叠。 每个侧屏蔽件中的第一（下）磁性层被铁磁耦合到第二高力矩层，并且与底部屏蔽件中的第一高力矩层结合。 每个侧屏中的第三（上）磁性层被铁磁耦合到顶部屏蔽中的第三高力矩层，以改善稳定性。 传感器侧壁可以终止于参考层的顶表面，以降低阅读器屏蔽间隔。
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公开(公告)号：US20140252518A1
公开(公告)日：2014-09-11
申请号：US13785255
申请日：2013-03-05
Applicant: HEADWAY TECHNOLOGIES, INC.
Inventor： Kunliang Zhang , Min Li , Junjie Quan , Yewhee Chye
CPC classification number: H01L43/12 , G01R33/0076 , G01R33/025 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/3932
Abstract: A wrap around shield structure is disclosed for biasing a free layer in a sensor and includes a bottom shield, side shields, and top shield in which each shield element comprises a high moment layer with a magnetization saturation greater than that of Ni70Fe30. The high moment layers provide a better micro read width performance. Side shield structure includes a stack of antiferromagnetically (AFM) coupled magnetic layers on a second high moment layer. A first (lower) magnetic layer in each side shield is ferromagnetically coupled to the second high moment layer, and to a first high moment layer in the bottom shield. A third (upper) magnetic layer in each side shield is ferromagnetically coupled to a third high moment layer in the top shield for improved stabilization. Sensor sidewalls may terminate at a top surface of a reference layer to decrease reader shield spacing.
Abstract translation: 公开了一种用于偏置传感器中的自由层的环绕屏蔽结构，并且包括底部屏蔽，侧面屏蔽和顶部屏蔽，其中每个屏蔽元件包括磁化饱和度大于Ni70Fe30的高磁矩层。 高矩阵层提供更好的微读宽度性能。 侧屏蔽结构包括在第二高力矩层上的反铁磁（AFM）耦合磁层的堆叠。 每个侧屏蔽件中的第一（下）磁性层被铁磁耦合到第二高力矩层，并且与底部屏蔽件中的第一高力矩层结合。 每个侧屏中的第三（上）磁性层被铁磁耦合到顶部屏蔽中的第三高力矩层，以改善稳定性。 传感器侧壁可以终止于参考层的顶表面，以降低阅读器屏蔽间隔。
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公开(公告)号：US10593357B2
公开(公告)日：2020-03-17
申请号：US16161136
申请日：2018-10-16
Applicant: Headway Technologies, Inc.
Inventor： Junjie Quan , Glen Garfunkel , Yewhee Chye , Kunliang Zhang , Min Li
IPC: G11B5/39
Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.
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5.发明申请公开(公告)号：US20190051321A1
公开(公告)日：2019-02-14
申请号：US16161136
申请日：2018-10-16
Applicant: Headway Technologies, Inc.
Inventor： Junjie Quan , Glen Garfunkel , Yewhee Chye , Kunliang Zhang , Min Li
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/3932 , G11B5/3951 , G11B2005/3996
Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.
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Patent Agency Ranking
公开(公告)号：US09799357B1
公开(公告)日：2017-10-24
申请号：US15345813
申请日：2016-11-08
Applicant: Headway Technologies, Inc.
Inventor： Ruhang Ding , Yewhee Chye , Wenyu Chen , Kunliang Zhang , Min Li
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/3932 , G11B5/398
Abstract: A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a bottom shield to reduce reader shield spacing and improve pin related noise. Above the AFM layer is an AP2/AFM coupling layer/AP1 stack that extends from an air bearing surface to the MR sensor backside. The AP2 layer is pinned by the AFM layer, and the AP1 layer serves as a reference layer to an overlying free layer during a read operation. The AP1 and AP2 layers have improved resistance to magnetization flipping because back portions thereof have a full cross-track width “w” between MR sensor sides thereby enabling greater pinning strength from the AFM layer. Front portions of the AP1/AP2 layers lie under the free layer and have a track width less than “w”. The bottom shield may have an anti-ferromagnetic coupling structure. A process flow is provided for fabricating the MR sensor.
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公开(公告)号：US09515253B2
公开(公告)日：2016-12-06
申请号：US14748872
申请日：2015-06-24
Applicant: Headway Technologies, Inc.
Inventor： Kunliang Zhang , Hui-Chuan Wang , Junjie Quan , Yewhee Chye , Min Li
CPC classification number: H01L43/10 , G01R33/093 , G01R33/098 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L29/82 , H01L43/02 , H01L43/08
Abstract: A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth.
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公开(公告)号：US20150295168A1
公开(公告)日：2015-10-15
申请号：US14748872
申请日：2015-06-24
Applicant: Headway Technologies, Inc.
Inventor： Kunliang Zhang , Hui-Chuan Wang , Junjie Quan , Yewhee Chye , Min Li
CPC classification number: H01L43/10 , G01R33/093 , G01R33/098 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L29/82 , H01L43/02 , H01L43/08
Abstract: A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth.
Abstract translation: 最终形成传感器或MRAM元件的TMR堆叠或GMR堆叠在其铁磁自由层和/或其SyAP钉扎层的AP1层中包括Fe或富铁FeX层的插入层。 X是选自总原子百分数小于50％的Ta，Hf，V，Co，Mo，Zr，Nb或Ti的非磁性金属元素（或元素）。 插入层的厚度在1至10埃之间，优选2至5埃，并且在TMR堆叠中，它们被插入到隧道势垒层和铁磁自由层或隧道势垒层之间的界面附近，以及 TMR堆叠中的Syap钉扎层的AP1层。 插入层限制了CoFeB和NiFe层中B和Ni的相互扩散，并阻止NiFe晶体生长。
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公开(公告)号：US20230258747A1
公开(公告)日：2023-08-17
申请号：US17671413
申请日：2022-02-14
Applicant: Headway Technologies, Inc.
Inventor： Tom Zhong , Min Li , Ruhang Ding , Hiroshi Omine , QingJun Qin , Richard Zhou , Yunqing Cai , Yewhee Chye , Minghui Yu
CPC classification number: G01R33/093 , H01F10/3272 , H01F10/3254 , G03F7/427 , G03F7/16 , G03F7/36 , B24B37/042 , B24B37/048
Abstract: A composite hard mask is disclosed. In some embodiments, a first sacrificial hard mask layer comprising an amorphous carbon or silicon nitride and a second sacrificial hard mask layer comprising a silicon nitride, silicon oxide, metal, metal oxide, or metal nitride, wherein the first and second sacrificial hard mask layers are not made of the same material.
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10.发明申请公开(公告)号：US20200176024A1
公开(公告)日：2020-06-04
申请号：US16784304
申请日：2020-02-07
Applicant: Headway Technologies, Inc.
Inventor： Junjie Quan , Glen Garfunkel , Yewhee Chye , Kunliang Zhang , Min Li
IPC: G11B5/39
Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.
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