Invention Application
US20140252517A1 Thin Seeded Antiferromagnetic Coupled Side Shield for Sensor Biasing Applications
有权
用于传感器偏置应用的薄种子反铁磁耦合侧面屏蔽
- Patent Title: Thin Seeded Antiferromagnetic Coupled Side Shield for Sensor Biasing Applications
- Patent Title (中): 用于传感器偏置应用的薄种子反铁磁耦合侧面屏蔽
-
Application No.: US13785227Application Date: 2013-03-05
-
Publication No.: US20140252517A1Publication Date: 2014-09-11
- Inventor: Kunliang Zhang , Yewhee Chye , Min Li , Glen Garfunkel
- Applicant: HEADWAY TECHNOLOGIES, INC.
- Applicant Address: US CA Milpitas
- Assignee: HEADWAY TECHNOLOGIES, INC.
- Current Assignee: HEADWAY TECHNOLOGIES, INC.
- Current Assignee Address: US CA Milpitas
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12

Abstract:
A composite side shield structure is disclosed for providing biasing to a free layer in a sensor structure. The sensor is formed between a bottom shield and top shield each having a magnetization in a first direction that is parallel to an ABS. The side shield is stabilized by an antiferromagnetic (AFM) coupling scheme wherein a bottom (first) magnetic layer is AFM coupled to a second magnetic layer which in turn is AFM coupled to an uppermost (third) magnetic layer. First and third magnetic layers each have a magnetization aligned in the first direction and are coupled to bottom and top shields, respectively, for additional stabilization. The top shield may be modified to include an AFM scheme for providing additional stabilization and guidance to magnetic moments within AFM coupled magnetic layers in the top shield, and to the third magnetic layer in the side shield.
Public/Granted literature
- US09230577B2 Thin seeded antiferromagnetic coupled side shield for sensor biasing applications Public/Granted day:2016-01-05
Information query
IPC分类: