公开(公告)号：US4305776A

公开(公告)日：1981-12-15

申请号：US092637

申请日：1979-11-08

申请人： Josef Grabmaier

发明人： Josef Grabmaier

IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B15/00 ,  C30B15/06 ,  C30B15/36 ,  C30B29/06 ,  H01L21/208 ,  C30B29/00 ,  C30B19/12

CPC分类号： C30B15/002 ,  C30B11/001 ,  C30B11/14 ,  C30B15/007 ,  C30B15/06 ,  C30B15/36 ,  Y10S117/90

摘要： Si-crystals with columnar structures are produced by contacting a silicon melt with a melt-resistant carrier body having periodically spaced crystallization-seed centers on a surface thereof facing the melt, establishing a controlled temperature gradient at the interface between the carrier body surface and the melt so that crystallization of the melt onto the seed centers occurs and then removing the body with the adhering crystal layer from the melt. In a preferred embodiment, an elongated traveling web having a select hole pattern therein functioning as the seed centers, is utilized as a carrier body.

摘要翻译： 具有柱状结构的Si晶体通过使硅熔体与其面向熔体的表面上具有周期性间隔开的结晶种子中心的耐熔体载体相接触来制造，在承载体表面和 熔化，使得熔体在种子中心的结晶发生，然后用熔体附着的晶体层去除体。 在优选实施例中，用作其种子中心的具有选择孔图案的细长行进网被用作承载体。

公开(公告)号：US4226834A

公开(公告)日：1980-10-07

申请号：US864745

申请日：1977-12-27

申请人： Taro Shudo ,  Bosshi Kudo ,  Yasushi Tamai

发明人： Taro Shudo ,  Bosshi Kudo ,  Yasushi Tamai

IPC分类号： C30B15/06 ,  C30B15/14 ,  C30B29/64 ,  H01L21/208 ,  B01J17/18

CPC分类号： C30B15/14 ,  C30B15/06 ,  Y10T117/1048 ,  Y10T117/1068

摘要： The lateral pulling growth of a thin and wide crystal ribbon is established by laterally pulling the crystal ribbon from the melt of a crystalline substance having the same crystal structure as that of the crystal ribbon with a gaseous cooling medium blown over the surfaces of the melt and the grown crystal.

摘要翻译： 薄和宽晶体带的横向牵拉生长是通过在熔体的表面上吹送的气态冷却介质横向拉动来自具有与晶体带相同的晶体结构的结晶物质的熔体的晶体带， 成长的水晶。

公开(公告)号：US3729291A

公开(公告)日：1973-04-24

申请号：US3729291D

申请日：1971-04-05

申请人： GEN MOTORS CORP

发明人： BLEIL C

IPC分类号： C30B15/02 ,  C30B15/06 ,  B01J17/04 ,  B01J17/18

CPC分类号： C30B15/02 ,  C30B15/06

摘要： AN APPARATUS AND MMETHOD ARE DISCLOSED FOR GROWING CRYSTALS FROM A MELT OF A MOLTEN SOLVENT METAL THAT IS SATURATED WITH A SOLUTE. HEAT IS WITHDRAWN THROUGH A SEED CONTACTING THE SURFACE OF THE MELT TO PRECIPITATE THE SOLUTE ONTO SAID SEED AT THE SEED-MELT INTERFACE. THE SEED IS PULLED AWAY FROM THE MELT AT A RATE COMMENSURATE WITH THE PRECIPITATION RATES. SIMULTANEOUSLY, MORE SOLUTE IS DISSOLVED INTO THE MELT FROM A SOLUTE SOURCE IN THE MELT BENEATH THE GROWTH INERFACE WHILE MAINTAINING A CLOSE SOURCE-GROWTH INTERFACE SPACING SUBSTANTIALLY CONSTANT.

公开(公告)号：US20220145494A1

公开(公告)日：2022-05-12

申请号：US17610508

申请日：2020-05-12

申请人： LEADING EDGE CRYSTAL TECHNOLOGIES, INC.

发明人： Alison GREENLEE ,  Jesse S. APPEL ,  Nathan STODDARD

IPC分类号： C30B31/06 ,  C30B15/06 ,  C30B15/00 ,  C30B29/06 ,  C30B15/14

摘要： A system for producing a ribbon from a melt includes a crucible to contain a melt and a cold block. The cold block has a surface that directly faces an exposed surface of the melt. A ribbon is formed on the melt using the cold block. A furnace is operatively connected to the crucible. The ribbon passes through the furnace after removal from the melt. The furnace includes at least one gas jet. The gas jet can dope the ribbon, form a diffusion barrier on the ribbon, and/or passivate the ribbon. Part of the ribbon passes through the furnace while part of the ribbon is being formed in the crucible using the cold block.

公开(公告)号：US20200040481A1

公开(公告)日：2020-02-06

申请号：US16600859

申请日：2019-10-14

申请人： CHANGZHOU UNIVERSITY ,  JIANGSU UNIVERSITY

发明人： Jianning DING ,  Ningyi YUAN ,  Jiawei XU ,  Dapeng SHEN ,  Xiaodong XU ,  Tao SUN ,  Shubo WANG

IPC分类号： C30B15/06 ,  C30B15/00 ,  C30B15/02 ,  C30B29/06

摘要： A silicon wafer horizontal growth apparatus comprises a casing forming a cavity; a crucible within the cavity and having a melting zone, an overflow port, a first and a second overflow surface; a feeding assembly for adding raw material to the melting zone at an adjustable rate; a heating assembly comprising two movable heaters disposed on the upper and lower sides of the crucible at an interval; a thermal insulation component for maintaining a temperature in the cavity; a gas flow assembly comprising a jet located above the second overflow surface, a gas conductive graphite member mounted on the bottom of the crucible, a quartz exhaust tube connected with the gas conductive graphite member, and a quartz cooling tube outside the exhaust tube; and a heat insulating baffle located above the second overflow surface for isolating the heating assembly from the jet, dividing the cavity into hot and cold zones.

公开(公告)号：US09970125B2

公开(公告)日：2018-05-15

申请号：US13398884

申请日：2012-02-17

申请人： Brian H. Mackintosh ,  Peter L. Kellerman ,  Dawei Sun

发明人： Brian H. Mackintosh ,  Peter L. Kellerman ,  Dawei Sun

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B15/06 ,  C30B29/06

CPC分类号： C30B15/14 ,  C30B15/06 ,  C30B29/06 ,  Y10T117/1008 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1068

摘要： An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

公开(公告)号：US20180047864A1

公开(公告)日：2018-02-15

申请号：US14226991

申请日：2014-03-27

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Peter L. Kellerman ,  Brian Mackintosh ,  Frederick M. Carlson ,  David Morrell ,  Ala Moradian ,  Nandish Desai ,  Dawei Sun ,  Frank Sinclair

IPC分类号： H01L31/18 ,  C30B15/14 ,  C30B15/20 ,  C30B15/06 ,  C30B29/06

CPC分类号： C30B15/06 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  C30B35/00 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.

公开(公告)号：US20170051430A1

公开(公告)日：2017-02-23

申请号：US14830140

申请日：2015-08-19

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Dawei SUN ,  Peter L. KELLERMAN ,  Gregory Thronson

IPC分类号： C30B15/24 ,  C30B29/20 ,  C30B15/14 ,  C30B15/06 ,  C30B15/10

摘要： An apparatus for drawing a crystalline sheet from a melt. The apparatus may include a crucible configured to contain the melt and having a dam structure, where the melt comprises an exposed surface having a level defined by a top of the dam structure. The apparatus may further include a support apparatus disposed within the crucible and having an upper surface, wherein the crystalline sheet is maintained flush with the exposed surface of the melt when drawn over the support apparatus, and may include a melt-back heater directing heat through the upper surface of the support apparatus to partially melt the crystalline sheet when the crystalline sheet is drawn over the support apparatus.

摘要翻译： 一种用于从熔体中拉伸结晶片的设备。 该设备可以包括被配置为容纳熔体并具有坝结构的坩埚，其中熔体包括具有由坝结构的顶部限定的水平的暴露表面。 该设备还可以包括设置在坩埚内并具有上表面的支撑装置，其中当拉伸在支撑装置上时，结晶片与熔体的暴露表面保持齐平，并且可以包括引导热量通过的熔化回热加热器 所述支撑装置的上表面在所述结晶片被拉过所述支撑装置时部分地熔化所述结晶片。

公开(公告)号：US09574285B2

公开(公告)日：2017-02-21

申请号：US14566085

申请日：2014-12-10

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Frank Sinclair ,  Peter L. Kellerman

IPC分类号： C30B29/02 ,  C30B15/26 ,  C30B15/06 ,  C30B29/06

CPC分类号： C30B15/26 ,  C30B15/06 ,  C30B29/06 ,  G01N23/207

摘要： An apparatus to monitor thickness of a crystalline sheet grown from a melt. The apparatus may include a process chamber configured to house the melt and crystalline sheet; an x-ray source disposed on a first side of the crystalline sheet and configured to deliver a first beam of x-rays that penetrate the crystalline sheet from a first surface to a second surface opposite the first surface, at a first angle of incidence with respect to the first surface; and an x-ray detector disposed on the first side of the crystalline sheet and configured to intercept a second beam of x-rays that are generated by reflection of the first beam of x-rays from the crystalline sheet at an angle of reflection with respect to the first surface, wherein a sum of the angle of incidence and the angle of reflection satisfies the equation λ=2d sin θ.

摘要翻译： 监测从熔体生长的结晶片的厚度的装置。 设备可以包括处理室，其被配置为容纳熔体和结晶片; x射线源，其设置在所述结晶片的第一侧上，并且被配置为以与所述第一表面相对的第一表面向所述第一表面穿过所述结晶片的第一射线束以与所述第一表面相反的第二表面， 尊重第一面; 以及x射线检测器，其设置在所述结晶片的第一侧上并且被配置为截取通过以与所述晶片的相反的角度反射所述第一X射线束而产生的第二射线束 到第一表面，其中入射角和反射角的和满足等式λ=2dsinθ。

公开(公告)号：US09267219B2

公开(公告)日：2016-02-23

申请号：US13039789

申请日：2011-03-03

申请人： Peter L. Kellerman ,  Frederick Carlson

发明人： Peter L. Kellerman ,  Frederick Carlson

IPC分类号： C30B15/06 ,  C30B11/00 ,  C30B29/06 ,  C03B29/08

CPC分类号： C30B11/007 ,  C03B29/08 ,  C30B15/06 ,  C30B29/06 ,  C30B29/08 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1068

摘要： The embodiments herein relate to a sheet production apparatus. A vessel is configured to hold a melt of a material and a cooling plate is disposed proximate the melt. This cooling plate configured to form a sheet of the material on the melt. A pump is used. In one instance, this pump includes a gas source and a conduit in fluid communication with the gas source. In another instance, this pump injects a gas into a melt. The gas can raise the melt or provide momentum to the melt.

摘要翻译： 本文的实施例涉及片材生产设备。 容器构造成容纳材料的熔体，并且冷却板设置在熔体附近。 该冷却板构造成在熔体上形成材料片。 使用泵。 在一种情况下，该泵包括气体源和与气体源流体连通的导管。 在另一种情况下，该泵将气体注入熔体中。 气体可以提高熔体或为熔体提供动量。