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    Self-pinned GMR structure by annealing
    51.
    发明申请
    Self-pinned GMR structure by annealing 失效
    通过退火自固定GMR结构

    公开(公告)号：US20050252576A1

    公开(公告)日：2005-11-17

    申请号：US10846406

    申请日：2004-05-14

    Applicant: Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    Inventor： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    IPC: H01F10/12 ,  H01F10/32 ,  H01F41/30

    CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49044

    Abstract: In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

    Abstract translation: 在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。 通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。 为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。 结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

    Junction stability and yield for spin valve heads
    52.
    发明授权
    Junction stability and yield for spin valve heads 失效
    自旋阀头的结点稳定性和产量

    公开(公告)号：US06879474B2

    公开(公告)日：2005-04-12

    申请号：US10718878

    申请日：2003-11-21

    Applicant: Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    Inventor： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    IPC: G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

    CPC classification number: B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    Abstract: The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

    Abstract translation: 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

    Magnetic tunnel junction for MRAM applications
    55.
    发明授权
    Magnetic tunnel junction for MRAM applications 有权
    用于MRAM应用的磁隧道结

    公开(公告)号：US08786036B2

    公开(公告)日：2014-07-22

    申请号：US12930877

    申请日：2011-01-19

    Applicant: Wei Cao ,  Cheng T. Horng ,  Witold Kula ,  Chyu Jiuh Torng

    Inventor： Wei Cao ,  Cheng T. Horng ,  Witold Kula ,  Chyu Jiuh Torng

    IPC: H01L43/10 ,  H01L27/22

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L43/00 ,  H01L43/02 ,  H01L43/08

    Abstract: A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FEB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic % NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiments, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.

    Abstract translation: 公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。 结晶层是厚度至少为6埃的Fe，Ni或FEB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％NiFeX厚度的Mg，Hf，Zr，Nb或Ta优选为20〜40埃，以显着降低位线切换电流和短路位数。 在替代实施例中，结晶层可以是Fe / NiFe双层。 可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。 在300℃至360℃退火，提供约150％的高磁阻比。

    Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM Device Applications
    56.
    发明申请
    Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM Device Applications 审中-公开
    用于自旋扭矩MRAM器件应用的SiN封装上的金属保护层

    公开(公告)号：US20140061827A1

    公开(公告)日：2014-03-06

    申请号：US13597465

    申请日：2012-08-29

    Applicant: Kenlin Huang ,  Yuan-Tung Chin ,  Tom Zhong ,  Chyu-Jiuh Torng

    Inventor： Kenlin Huang ,  Yuan-Tung Chin ,  Tom Zhong ,  Chyu-Jiuh Torng

    IPC: H01L29/82 ,  H01L21/8239

    CPC classification number: G01R33/098 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/308 ,  H01F41/325 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic thin film deposition is patterned and protected from oxidation during subsequent processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN. The SiN layer is then itself protected during the processing by a metal overlayer, preferably of Ta, Al, TiN, TaN or W. A sequence of low pressure plasma etches, using Oxygen, Cl2, BCl3 and C2H4 chemistries provide selectivity of the metal overlayer to various oxide layers and to the photo-resist hard masks used in patterning and metal layer and thereby allow the formation of bit lines while maintaining the integrity of the SiN layer.

    Abstract translation: 通过SiN的防氧化封装层，在随后的工艺（例如位线形成）中图案化和保护磁性薄膜沉积物免于氧化。 然后，SiN层在金属覆盖层，优选Ta，Al，TiN，TaN或W的加工过程中自身受到保护。使用氧气，Cl2，BCl3和C2H4化学物质的低压等离子体蚀刻序列提供金属覆层的选择性 到各种氧化物层和用于图案化和金属层中的光刻胶硬掩模，从而允许形成位线，同时保持SiN层的完整性。

    Method to Reduce Magnetic Film Stress for Better Yield
    58.
    发明申请
    Method to Reduce Magnetic Film Stress for Better Yield 有权
    减少磁膜应力以获得更好的产量的方法

    公开(公告)号：US20130302912A1

    公开(公告)日：2013-11-14

    申请号：US13469258

    申请日：2012-05-11

    Applicant: Tom Zhong ,  Kenlin Huang ,  Chyu-Jiuh Torng

    Inventor： Tom Zhong ,  Kenlin Huang ,  Chyu-Jiuh Torng

    IPC: H01L21/02

    CPC classification number: H01L43/12 ,  H01L43/08

    Abstract: A method of forming a thin-film deposition, such as an MTJ (magnetic tunneling junction) layer, on a wafer-scale CMOS substrate so that the thin-film deposition is segmented by walls or trenches and not affected by thin-film stresses due to wafer warpage or other subsequent annealing processes. An interface layer is formed on the CMOS substrate and is patterned by either forming undercut trenches extending into its upper surface or by fabricating T-shaped walls that extend along its upper surface. The thin-film is deposited continuously over the patterned surface, whereupon either the trenches or walls segment the deposition and serve as stress-relief mechanisms to eliminate adverse effects of processing as stresses such as those caused by wafer warpage.

    Abstract translation: 在晶片级CMOS衬底上形成诸如MTJ（磁性隧道结）层的薄膜沉积的方法，使得薄膜沉积被壁或沟槽分段，并且不受薄膜应力的影响 晶圆翘曲或其他后续退火工艺。 在CMOS衬底上形成界面层，并且通过形成延伸到其上表面的底切沟槽或通过制造沿其上表面延伸的T形壁而被图案化。 薄膜连续地沉积在图案化表面上，于是沟槽或壁分隔沉积物并用作应力消除机制，以消除作为诸如由晶片翘曲引起的应力的加工的不利影响。

    High density spin-transfer torque MRAM process
    59.
    发明授权
    High density spin-transfer torque MRAM process 有权

    公开(公告)号：US08324698B2

    公开(公告)日：2012-12-04

    申请号：US12930333

    申请日：2011-01-04

    Applicant: Tom Zhong ,  Chyu-Jiuh Torng ,  Rongfu Xiao ,  Adam Zhong ,  Wai-Ming Johnson Kan ,  Daniel Liu

    Inventor： Tom Zhong ,  Chyu-Jiuh Torng ,  Rongfu Xiao ,  Adam Zhong ,  Wai-Ming Johnson Kan ,  Daniel Liu

    IPC: H01L29/82

    CPC classification number: H01L27/228 ,  H01L43/12

    Abstract: A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.

    GMR Sensor Stripe for a Biosensor with Enhanced Sensitivity
    60.
    发明申请
    GMR Sensor Stripe for a Biosensor with Enhanced Sensitivity 有权
    用于具有增强灵敏度的生物传感器的GMR传感器条带

    公开(公告)号：US20120169331A1

    公开(公告)日：2012-07-05

    申请号：US13417398

    申请日：2012-03-12

    Applicant: Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

    Inventor： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

    IPC: G01R33/02 ,  H05K3/00

    CPC classification number: G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

    Abstract: A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

    Abstract translation: GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响 磁层的磁致伸缩产生补偿横向磁各向异性。 通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

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