公开(公告)号：US4560582A

公开(公告)日：1985-12-24

申请号：US618174

申请日：1984-06-07

Applicant: Matsuo Ichikawa

Inventor： Matsuo Ichikawa

IPC: H01L21/22 ,  H01L29/08 ,  H01L29/78 ,  H01L21/38

CPC classification number: H01L21/22 ,  H01L29/0847 ,  H01L29/78 ,  Y10S257/919

Abstract: A semiconductor device including a MOS field effect transistor formed on a single silicon crystal substrate having source and drain diffused regions of reduced depth. In order to avoid penetration of aluminum from the aluminum connector through the diffused region into the substrate, the diffused region is formed by double diffusion of at least two types of impurities of the same conductive type, but having different diffusion coefficients with respect to each other.

Abstract translation: 一种半导体器件，包括形成在具有较低深度的源极和漏极扩散区域的单个硅晶体衬底上的MOS场效应晶体管。 为了避免铝从铝连接器穿过扩散区域进入衬底，扩散区域由相同导电类型的至少两种类型的杂质的双扩散形成，但是相对于彼此具有不同的扩散系数 。

公开(公告)号：US3723199A

公开(公告)日：1973-03-27

申请号：US3723199D

申请日：1969-11-10

Applicant: IBM

Inventor： VORA M

IPC: H01L21/00 ,  H01L21/74 ,  H01L27/00 ,  H01L29/08 ,  H01L7/00 ,  H01L7/64 ,  H01L19/00

CPC classification number: H01L29/0826 ,  H01L21/00 ,  H01L21/74 ,  H01L27/00 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/098 ,  Y10S148/145 ,  Y10S148/151 ,  Y10S257/919

Abstract: A SUBCOLLECTOR WINDOW IS OPENED IN AN OXIDE COVERED P- SIALICON SUBSTRATE. TWO N DOPANTS OF DIFFERENT DIFFUSION RATES (ARSENIC AND PHOSPHOROUS) ARE DIFFUSED THROUGH THE WINDOW INTO THE SUBSTRATE. THE OXIDE COVERING IS REMOVED AND A P- SILICON EPITAXIAL LAYER IS DEPOSITED ON THE SUBSTRATE AND REOXIDIZED. DURING THE REOXIDATION CYCLE, THE PHSOPHOROUS AND ARSENIC ARE OUT-DIFFUSED, THE PHOSPHORUS REACHING THE TOP SURFACE OF THE EPITAXIAL LAYER TO PRODUCE AN N POCKET IN THE P- EPITAXIAL LAYER AND SUBSTRATE, THE POCKET HAVING A HEAVILY DOPED N+ REGION ADJACENT THE

EPITAXIAL LAYER-SUBSTRATE INTERFACE. BASE AND EMITTER DIFFUSIONS ARE MADE WITHIN THE N POCKET TO FORM A TRANSISTOR.

公开(公告)号：US3484658A

公开(公告)日：1969-12-16

申请号：US3484658D

申请日：1967-08-21

Applicant: NIPPON TELEGRAPH & TELEPHONE

Inventor： KOMATSU RYOSAKU

IPC: H01C7/04 ,  H01L21/00 ,  H01L29/8605 ,  H01L3/00 ,  H01L5/00 ,  H01L15/00

CPC classification number: H01L29/8605 ,  H01C7/04 ,  H01L21/00 ,  Y10S257/919

公开(公告)号：US3431150A

公开(公告)日：1969-03-04

申请号：US3431150D

申请日：1966-10-07

Applicant: US AIR FORCE

Inventor： DOLAN RUSSELL P JR ,  BUCHANAN BOBBY L ,  ROOSILD SVEN A

IPC: H01J37/317 ,  H01L21/00 ,  H01L21/266 ,  H01L29/00 ,  H01L7/54 ,  H01L7/48 ,  H01L7/50

CPC classification number: H01L21/00 ,  H01J37/3171 ,  H01L21/266 ,  H01L29/00 ,  Y10S257/919