公开(公告)号：US07767993B2

公开(公告)日：2010-08-03

申请号：US11761758

申请日：2007-06-12

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： H01L29/02

CPC分类号： G11C8/14 ,  G11C13/0007 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2213/31 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147

摘要： A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of which serves as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.

摘要翻译： 一种电阻变化存储装置，包括基板，形成在基板上方彼此绝缘的第一和第二布线，以及设置在第一和第二布线之间的存储单元，其中存储单元包括：可变电阻元件，用于存储为 信息电阻值; 和与可变电阻元件串联连接的肖特基二极管。 可变电阻元件具有：由包含至少一个过渡元素和用于容纳阳离子离子的空腔部位的复合化合物形成的记录层; 以及形成在记录层的相对侧上的电极，其中一个用作写入或擦除模式的阳离子源，用于将阳离子供应到要容纳在其中的腔室位置的记录层。

公开(公告)号：US07733684B2

公开(公告)日：2010-06-08

申请号：US11535784

申请日：2006-09-27

申请人： Koichi Kubo ,  Takahiro Hirai ,  Shinya Aoki ,  Robin Carter ,  Chikayoshi Kamata

发明人： Koichi Kubo ,  Takahiro Hirai ,  Shinya Aoki ,  Robin Carter ,  Chikayoshi Kamata

IPC分类号： G11C11/00

CPC分类号： G11B9/04 ,  B82Y10/00 ,  G11B9/149 ,  G11B11/08 ,  G11C13/0007 ,  G11C13/0009 ,  G11C13/003 ,  G11C2213/12 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/147

摘要： A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.

摘要翻译： 根据本发明的示例的数据读/写设备包括记录层，以及用于向记录层施加电压，产生记录层中的电阻变化和记录数据的装置。 记录层由具有至少两种阳离子元素的复合化合物组成，至少一种阳离子元素是具有电子未完全填充的“d”轨道的过渡元素，并且 相邻的阳离子元素为0.32nm以下。

公开(公告)号：US07719875B2

公开(公告)日：2010-05-18

申请号：US11761738

申请日：2007-06-12

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： G11C11/00

CPC分类号： G11C8/08 ,  G11C11/36 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/147 ,  H01L45/1675

摘要： A resistance change memory device including: a substrate; cell arrays stacked thereabove, each including a matrix layout of memory cells; a write circuit configured to write a pair cell constituted by two neighboring memory cells; and a read circuit configured to read complementary resistance value states of the pair cell as one bit of data, wherein the memory cell includes a variable resistance element for storing as information a resistance value, and wherein the variable resistance element has a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

摘要翻译： 一种电阻变化存储器件，包括：衬底; 单元阵列堆叠在其上，每个包括存储单元的矩阵布局; 写入电路，被配置为写入由两个相邻存储器单元构成的对单元; 以及读取电路，被配置为读取所述对单元的互补电阻值状态作为数据的一位，其中所述存储单元包括用于存储作为信息的电阻值的可变电阻元件，并且其中所述可变电阻元件具有由 由AxMyOz表示的第一复合化合物（其中“A”和“M”是彼此不同的阳离子元素;“O”氧;和0.5和nlE; x和nlE; 1.5,0.5和nlE; y和nlE; 2.5和1.5＆ ）和含有至少一个过渡元素和用于容纳阳离子离子的空腔部位的第二复合化合物。

公开(公告)号：US07623370B2

公开(公告)日：2009-11-24

申请号：US11761823

申请日：2007-06-12

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0092 ,  G11C2211/5622 ,  G11C2211/5631 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/147

摘要： A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines wherein the memory cell includes, a variable resistance element for storing as information a resistance value and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

摘要翻译： 一种电阻变化存储装置，包括：基板，形成在所述基板上方彼此绝缘的第一和第二布线;以及设置在所述第一和第二布线之间的存储单元，其中所述存储单元包括：可变电阻元件，用于存储为信息 电阻值和与可变电阻元件串联连接的肖特基二极管。 可变电阻元件具有由包含至少两种阳离子元素的复合化合物构成的记录层，至少一种阳离子元素是具有“d” - 轨道的过渡元素，其中电子未完全填充，最短 相邻阳离子元素之间的距离为0.32nm以下。

公开(公告)号：US07607327B2

公开(公告)日：2009-10-27

申请号：US11194670

申请日：2005-08-02

申请人： Katsuaki Sumida ,  Kenji Terai ,  Koichi Kubo

发明人： Katsuaki Sumida ,  Kenji Terai ,  Koichi Kubo

IPC分类号： D06F39/08

CPC分类号： D06F39/083 ,  D06F35/00

摘要： A drum type washing machine includes a water tub; a cylindrical rotary drum rotatably installed in the water tub such that a central axis of rotation of the rotary drum is horizontal or slanted; a water outlet provided on a bottom portion of the water tub; a motor for rotating the rotary drum; a water supplying unit for supplying wash water into the water tub; a water draining unit for draining the wash water from the water tub; and a controller for controlling the motor, the water supplying unit and the water draining unit to thereby perform a washing, a rinsing and a water-extracting process. A guiding member with a guiding surface is installed on an inner bottom portion of the water tub to facilitate collection of the wash water and guide the collected wash water toward the water outlet during the water-extracting process.

摘要翻译： 滚筒式洗衣机包括水桶; 可旋转地安装在水桶中的圆筒形旋转滚筒，使得旋转滚筒的中心旋转轴线是水平的或倾斜的; 设置在水桶底部的出水口; 用于使旋转滚筒旋转的马达; 供水单元，用于将洗涤水供应到所述水桶中; 用于从洗涤水排出洗涤水的排水单元; 以及用于控制电机，供水单元和排水单元的控制器，从而进行清洗，冲洗和抽水过程。 具有引导表面的引导构件安装在水桶的内底部，以便于在水提取过程中收集洗涤水并将收集的洗涤水引导到出水口。

公开(公告)号：US20090189963A1

公开(公告)日：2009-07-30

申请号：US12362393

申请日：2009-01-29

申请人： Tetsuya Ohashi ,  Yasuo Kotaki ,  Koichi Kubo ,  Tatsuo Nanjo

发明人： Tetsuya Ohashi ,  Yasuo Kotaki ,  Koichi Kubo ,  Tatsuo Nanjo

IPC分类号： B41J2/175

CPC分类号： B41J2/17513 ,  B41J2/17553 ,  B41J2/17556 ,  B41J2002/17516

摘要： A liquid container includes a housing having a supply port leading out liquid contained in the housing, a spring member configured to generate a negative pressure, a flexible member joined to the housing to form a liquid chamber, a plate member disposed between the flexible film and the spring member, a lid member configured to cover the flexible member and secured to the housing, and a rib member movably disposed in a space surrounded by the lid member and the flexible member and configured to regulate the shape of the flexible member and the position of the plate member.

摘要翻译： 液体容器包括具有导出容纳在壳体中的液体的供给口的壳体，构造成产生负压的弹簧构件，与壳体接合以形成液体室的柔性构件，设置在柔性膜和 弹簧构件，构造成覆盖柔性构件并固定到壳体的盖构件，以及可移动地设置在由盖构件和柔性构件包围的空间中的肋构件，并且构造成调节柔性构件的形状和位置 的板件。

公开(公告)号：US07394680B2

公开(公告)日：2008-07-01

申请号：US11761391

申请日：2007-06-12

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/004 ,  G11C2013/0042 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72

摘要： A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate to have a stack structure of a variable resistance element and an access element, the variable resistance element storing a high resistance state or a low resistance state in a non-volatile manner, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate, wherein the variable resistance element includes: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site.

摘要翻译： 一种电阻变化存储器件，包括：半导体衬底; 至少一个单元阵列形成在所述半导体衬底上方以具有可变电阻元件和存取元件的堆叠结构，所述可变电阻元件以非易失性方式存储高电阻状态或低电阻状态，所述存取元件具有 在选择状态下为十倍以上的一定电压范围内的截止电阻值; 以及形成在所述半导体基板上的读/写电路，其中所述可变电阻元件包括：由包含至少一个过渡元件的复合化合物和用于容纳阳离子离子的空腔位置形成的记录层; 以及形成在记录层的相对侧上的电极，其中一个电极用作写入或擦除模式中的阳离子源，用于将阳离子供应到要容纳在腔部位中的记录层。

公开(公告)号：US20080062231A1

公开(公告)日：2008-03-13

申请号：US11850279

申请日：2007-09-05

申请人： Koichi Kubo ,  Yasuo Kotaki ,  Tetsuya Ohashi ,  Hitoshi Takada ,  Ryoji Inoue ,  Hideki Ogura

发明人： Koichi Kubo ,  Yasuo Kotaki ,  Tetsuya Ohashi ,  Hitoshi Takada ,  Ryoji Inoue ,  Hideki Ogura

IPC分类号： B41J2/175

CPC分类号： B41J2/17523 ,  B41J2/17526

摘要： An ink container usable for recording heads different in flow rate without being affected by a pigment particle concentration of ink held in an ink supply portion is provided. In correspondence with a size of a filter of a recording head used, ink non-conducting areas are provided to a press-contact member, whereby movement of settled ink remaining in the press-contact member is blocked. As a result, common use of the ink container with respect to the recording heads different in flow rate is realized.

摘要翻译： 提供一种用于记录不同流速的头的油墨容器，而不受保持在供墨部分中的油墨的颜料颗粒浓度的影响。 对应于使用的记录头的过滤器的尺寸，油墨不导电区域被提供到压接构件，由此残留在压接构件中的沉淀的油墨的移动被阻挡。 结果，实现了相对于不同流量的记录头的墨盒的普遍使用。

公开(公告)号：US20070285966A1

公开(公告)日：2007-12-13

申请号：US11761391

申请日：2007-06-12

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： G11C11/36

CPC分类号： G11C13/0007 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/004 ,  G11C2013/0042 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72

摘要： A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate to have a stack structure of a variable resistance element and an access element, the variable resistance element storing a high resistance state or a low resistance state in a non-volatile manner, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate, wherein the variable resistance element includes: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.

摘要翻译： 一种电阻变化存储器件，包括：半导体衬底; 至少一个单元阵列形成在所述半导体衬底上方以具有可变电阻元件和存取元件的堆叠结构，所述可变电阻元件以非易失性方式存储高电阻状态或低电阻状态，所述存取元件具有 在选择状态下为十倍以上的一定电压范围内的截止电阻值; 以及形成在所述半导体基板上的读/写电路，其中所述可变电阻元件包括：由包含至少一个过渡元件的复合化合物和用于容纳阳离子离子的空腔位置形成的记录层; 以及形成在记录层的相对侧上的电极，其中一个电极用作写入或擦除模式中的阳离子源，用于将阳离子供应到要容纳在其中的空腔位置的记录层。

公开(公告)号：US20070285963A1

公开(公告)日：2007-12-13

申请号：US11761282

申请日：2007-06-11

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： G11C11/36

CPC分类号： G11C5/02 ,  G11C7/18 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/147

摘要： A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, each having memory cells, bit lines and word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read/write circuit; and third vertical wirings disposed the word lines to the read/write circuit. The memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d” orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

摘要翻译： 一种电阻变化存储器件，包括：半导体衬底; 单元阵列堆叠在衬底上，每个阵列具有存储单元，位线和字线; 形成在半导体衬底上的读/写电路; 布置成将位线连接到读/写电路的第一和第二垂直布线; 并且第三垂直布线将字线布置到读/写电路。 存储单元包括用于存储作为信息的电阻值的可变电阻元件，电阻值具有由包含至少两种阳离子元素的复合化合物组成的记录层，至少一种类型的阳离子元素是具有“d “轨道，其中电子不完全填充，相邻阳离子元素之间的最短距离为0.32nm或更小。