公开(公告)号：US5462812A

公开(公告)日：1995-10-31

申请号：US998194

申请日：1992-12-29

申请人： Son V. Nguyen ,  David M. Dobuzinsky ,  Douglas J. Dopp ,  David L. Harmon

发明人： Son V. Nguyen ,  David M. Dobuzinsky ,  Douglas J. Dopp ,  David L. Harmon

IPC分类号： C23C14/06 ,  C23C16/34 ,  C23C16/505 ,  C30B25/02 ,  H01L21/318

CPC分类号： C23C16/505 ,  C23C16/345

摘要： A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride film on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4. Films prepared by the process are disclosed and their properties are described.

公开(公告)号：US09393110B2

公开(公告)日：2016-07-19

申请号：US13253689

申请日：2011-10-05

申请人： Tamir S. Levi ,  Son V. Nguyen ,  Netanel Benichou ,  David Maimon ,  Ziv Yohanan ,  Nikolay Gurovich ,  Bella Felsen ,  Larisa Dadonkina ,  Ron Sharoni ,  Elena Sherman

发明人： Tamir S. Levi ,  Son V. Nguyen ,  Netanel Benichou ,  David Maimon ,  Ziv Yohanan ,  Nikolay Gurovich ,  Bella Felsen ,  Larisa Dadonkina ,  Ron Sharoni ,  Elena Sherman

IPC分类号： A61F2/24

CPC分类号： A61F2/2418 ,  A61F2/2412 ,  A61F2/2433 ,  A61F2220/0075 ,  A61F2230/0054 ,  A61F2250/0036 ,  A61F2250/0097

摘要： Embodiments of a radially collapsible and expandable prosthetic heart valve are disclosed. A valve frame can have a tapered profile when mounted on a delivery shaft, with an inflow end portion having a smaller diameter than an outflow end portion. The valve can comprise generally V-shaped leaflets, reducing material within the inflow end of the frame. An outer skirt can be secured to the outside of the inflow end portion of the frame, the outer skirt having longitudinal slack when the valve is expanded and lying flat against the frame when the valve is collapsed. A diagonally woven inner skirt can elongate axially with the frame. Side tabs of adjacent leaflets can extend through and be secured to window frame portions of the frame to form commissures. The window frame portions can be depressed radially inward relative to surrounding frame portions when the valve is crimped onto a delivery shaft.

摘要翻译： 公开了径向可折叠和可扩张的假体心脏瓣膜的实施例。 当安装在输送轴上时，阀架可以具有锥形轮廓，流入端部的直径小于流出端部分的直径。 阀可以包括大致V形的小叶，在框架的流入端内还原材料。 外裙可以固定到框架的流入端部分的外部，当阀门膨胀时，外裙部具有纵向松弛，并且当阀门折叠时，外裙部平放在框架上。 对角编织的内裙可以与框架轴向伸长。 相邻小叶的侧翼可以延伸穿过并固定到框架的窗框部分以形成连合。 当阀被压接到输送轴上时，窗框部分可以相对于周围的框架部分径向向内按压。

公开(公告)号：US08492880B2

公开(公告)日：2013-07-23

申请号：US13078305

申请日：2011-04-01

申请人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Son V. Nguyen ,  Li-Qun Xia

发明人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Son V. Nguyen ,  Li-Qun Xia

IPC分类号： H01L23/58 ,  H01L21/469

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L21/02112 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.

摘要翻译： 本公开提供了一种符合下面的衬底（即互连结构）的多层盖（即迁移屏障）。 可以位于互连结构的至少一个互连级别上方的多层盖包括从底部到顶部包括氮化硅的第一层和包含氮化硼和碳氮化硼中的至少一种的第二层。

公开(公告)号：US08431436B1

公开(公告)日：2013-04-30

申请号：US13288645

申请日：2011-11-03

申请人： Son V. Nguyen

发明人： Son V. Nguyen

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

摘要： At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

摘要翻译： 在第一器件晶片的至少Cu表面上形成至少一个金属粘附层。 具有另一Cu表面的第二器件晶片被定位在第一器件晶片的Cu表面的顶部和至少一个金属粘附层上。 然后将第一和第二器件晶片结合在一起。 接合包括将器件晶片加热到低于400℃的温度，有或没有施加外部施加的压力。 在加热期间，两个Cu表面结合在一起，并且至少一个金属粘合层从两个Cu表面获得氧原子，并在Cu表面之间形成至少一个金属氧化物结合层。

公开(公告)号：US20120123529A1

公开(公告)日：2012-05-17

申请号：US13253689

申请日：2011-10-05

申请人： Tamir Levi ,  Son V. Nguyen ,  Netanel Benichou ,  David Maimon ,  Ziv Yohanan ,  Nikolay Gurovich ,  Bella Felsen ,  Larisa Dadonkina

发明人： Tamir Levi ,  Son V. Nguyen ,  Netanel Benichou ,  David Maimon ,  Ziv Yohanan ,  Nikolay Gurovich ,  Bella Felsen ,  Larisa Dadonkina

IPC分类号： A61F2/24

CPC分类号： A61F2/2418 ,  A61F2/2412 ,  A61F2/2433 ,  A61F2220/0075 ,  A61F2230/0054 ,  A61F2250/0036 ,  A61F2250/0097

摘要： Embodiments of a radially collapsible and expandable prosthetic heart valve are disclosed. A valve frame can have a tapered profile when mounted on a delivery shaft, with an inflow end portion having a smaller diameter than an outflow end portion. The valve can comprise generally V-shaped leaflets, reducing material within the inflow end of the frame. An outer skirt can be secured to the outside of the inflow end portion of the frame, the outer skirt having longitudinal slack when the valve is expanded and lying flat against the frame when the valve is collapsed. A diagonally woven inner skirt can elongate axially with the frame. Side tabs of adjacent leaflets can extend through and be secured to window frame portions of the frame to form commissures. The window frame portions can be depressed radially inward relative to surrounding frame portions when the valve is crimped onto a delivery shaft.

摘要翻译： 公开了径向可折叠和可扩张的假体心脏瓣膜的实施例。 当安装在输送轴上时，阀架可以具有锥形轮廓，流入端部的直径小于流出端部分的直径。 阀可以包括大致V形的小叶，在框架的流入端内还原材料。 外裙可以固定到框架的流入端部分的外部，当阀门膨胀时，外裙部具有纵向松弛，并且当阀门折叠时，外裙部平放在框架上。 对角编织的内裙可以与框架轴向伸长。 相邻小叶的侧翼可以延伸穿过并固定到框架的窗框部分以形成连合。 当阀被压接到输送轴上时，窗框部分可以相对于周围的框架部分径向向内按压。

公开(公告)号：US20120089223A1

公开(公告)日：2012-04-12

申请号：US13253698

申请日：2011-10-05

申请人： Son V. Nguyen ,  Netanel Benichou

发明人： Son V. Nguyen ,  Netanel Benichou

IPC分类号： A61F2/24

CPC分类号： A61F2/2418 ,  A61F2220/0075 ,  A61F2220/0091 ,  A61F2230/0054

摘要： An implantable prosthetic valve, according to one embodiment, comprises a radially collapsible and expandable frame and a leaflet structure supported within the frame. The leaflet structure can comprise a plurality of leaflets paired together at commissures. In one embodiment, the commissures can comprise leaflet tabs rolled into spirals around non-rigid reinforcing inserts. In another embodiment, the commissures can comprise a reinforcing sheet folded around leaflet tabs.

摘要翻译： 根据一个实施例的可植入假体瓣膜包括径向可折叠和可扩张的框架以及支撑在框架内的小叶结构。 小叶结构可以包括在连合处配对在一起的多个传单。 在一个实施例中，连合件可以包括在非刚性加强插入件周围卷成螺旋形的小叶片。 在另一个实施例中，连合件可以包括折叠在叶瓣上的加强片。

公开(公告)号：US08120179B2

公开(公告)日：2012-02-21

申请号：US12615354

申请日：2009-11-10

申请人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

发明人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.

摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。

公开(公告)号：US20110193230A1

公开(公告)日：2011-08-11

申请号：US12700792

申请日：2010-02-05

申请人： Takeshi Nogami ,  Shyng-Tsong Chen ,  David V. Horak ,  Son V. Nguyen ,  Shom Ponoth ,  Chih-Chao Yang

发明人： Takeshi Nogami ,  Shyng-Tsong Chen ,  David V. Horak ,  Son V. Nguyen ,  Shom Ponoth ,  Chih-Chao Yang

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L24/80 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295

摘要： A method is provided for fabricating a microelectronic element having an air gap in a dielectric layer thereof. A dielectric cap layer can be formed which has a first portion overlying surfaces of metal lines, the first portion extending a first height above a height of a surface of the dielectric layer and a second portion overlying the dielectric layer surface and extending a second height above the height of the surface of the dielectric layer, the second height being greater than the first height. After forming the cap layer, a mask can be formed over the cap layer. The mask can have a multiplicity of randomly disposed holes. Each hole may expose a surface of only the second portion of the cap layer which has the greater height. The mask may fully cover a surface of the first portion of the cap layer having the lower height. Subsequently, an etchant can be directed towards the first and second portions of the cap layer to form holes in the cap layer aligned with the holes in the mask. Material can be removed from the dielectric layer where exposed to the etchant by the holes in the cap layer. At such time, the mask can protect the first portion of the cap layer and the metal lines from being attacked by the etchant.

摘要翻译： 提供了一种用于制造其电介质层中具有气隙的微电子元件的方法。 可以形成介电盖层，其具有覆盖金属线表面的第一部分，第一部分在电介质层的表面的高度之上延伸第一高度，以及覆盖介电层表面的第二部分，并且延伸第二高度 电介质层的表面的高度，第二高度大于第一高度。 在形成盖层之后，可以在盖层之上形成掩模。 掩模可以具有多个随机布置的孔。 每个孔可以暴露仅具有较大高度的盖层的第二部分的表面。 掩模可以完全覆盖具有较低高度的盖层的第一部分的表面。 随后，可以将蚀刻剂引导到盖层的第一和第二部分，以在盖层中形成与掩模中的孔对准的孔。 可以通过盖层中的孔从暴露于蚀刻剂的介电层去除材料。 此时，掩模可以保护盖层的第一部分和金属线不被蚀刻剂侵蚀。

公开(公告)号：US20110012238A1

公开(公告)日：2011-01-20

申请号：US12502690

申请日：2009-07-14

申请人： Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Xiao H. Liu ,  Son V. Nguyen ,  Thomas M. Shaw ,  Hosadurga Shobha

发明人： Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Xiao H. Liu ,  Son V. Nguyen ,  Thomas M. Shaw ,  Hosadurga Shobha

IPC分类号： H01L29/06 ,  H01L23/532 ,  H01L21/314

CPC分类号： H01L23/5329 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric capping layer having a dielectric constant of less than 4.2 is provided that exhibits a higher mechanical and electrical stability to UV and/or E-Beam radiation as compared to conventional dielectric capping layers. Also, the dielectric capping layer maintains a consistent compressive stress upon post-deposition treatments. The dielectric capping layer includes a tri-layered dielectric material in which at least one of the layers has good oxidation resistance, is resistance to conductive metal diffusion, and exhibits high mechanical stability under at least UV curing. The low k dielectric capping layer also includes nitrogen content layers that contain electron donors and double bond electrons. The low k dielectric capping layer also exhibits a high compressive stress and high modulus and is stable under post-deposition curing treatments, which leads to less film and device cracking and improved device reliability.

摘要翻译： 提供具有小于4.2的介电常数的介电覆盖层，与传统的介电覆盖层相比，其对UV和/或E-Beam辐射具有更高的机械和电学稳定性。 此外，介电覆盖层在沉积后处理时保持一致的压应力。 电介质覆盖层包括三层介电材料，其中至少一层具有良好的抗氧化性，耐导电性金属扩散，并且在至少UV固化下表现出高机械稳定性。 低k电介质封盖层还包括含有电子给体和双键电子的氮含量层。 低k电介质覆盖层还具有高压缩应力和高模量，并且在后沉积固化处理中是稳定的，这导致较少的膜和器件开裂和改进的器件可靠性。

公开(公告)号：US20100036484A1

公开(公告)日：2010-02-11

申请号：US12480603

申请日：2009-06-08

申请人： Ilia Hariton ,  Netanel Benichou ,  Yaacov Nitzan ,  Bella Felsen ,  Diana Nguyen-Thien-Nhoh ,  Rajesh Khanna ,  Son V. Nguyen ,  Tamir Levi ,  Itai Pelled

发明人： Ilia Hariton ,  Netanel Benichou ,  Yaacov Nitzan ,  Bella Felsen ,  Diana Nguyen-Thien-Nhoh ,  Rajesh Khanna ,  Son V. Nguyen ,  Tamir Levi ,  Itai Pelled

IPC分类号： A61F2/24

CPC分类号： A61F2/2418 ,  A61F2/2412 ,  A61F2/2433 ,  A61F2/2475 ,  A61F2/95 ,  A61F2002/9522 ,  A61F2220/0033 ,  A61F2220/005 ,  A61F2220/0075 ,  A61F2230/0054 ,  Y10T29/49863

摘要： An implantable prosthetic valve, according to one embodiment, comprises a frame, a leaflet structure, and a skirt member. The frame can have a plurality of axial struts interconnected by a plurality of circumferential struts. The leaflet structure comprises a plurality of leaflets (e.g., three leaflets arrange to form a tricuspid valve). The leaflet structure has a scalloped lower edge portion secured to the frame. The skirt member can be disposed between the leaflet structure and the frame.

摘要翻译： 根据一个实施例的可植入人造瓣膜包括框架，小叶结构和裙部构件。 框架可以具有由多个圆周支柱互连的多个轴向支柱。 小叶结构包括多个传单（例如，安排形成三尖瓣的三个小叶）。 小叶结构具有固定到框架的扇形下边缘部分。 裙部构件可以设置在小叶结构和框架之间。