公开(公告)号：US20120111825A1

公开(公告)日：2012-05-10

申请号：US13351370

申请日：2012-01-17

申请人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

发明人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

IPC分类号： B05D5/12 ,  B05D3/10

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.

摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。

公开(公告)号：US20120012980A1

公开(公告)日：2012-01-19

申请号：US13165191

申请日：2011-06-21

申请人： DAVID VACLAV HORAK ,  Shom Ponoth ,  Hosadurga Shobha ,  Chih-Chao Yang

发明人： DAVID VACLAV HORAK ,  Shom Ponoth ,  Hosadurga Shobha ,  Chih-Chao Yang

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/88 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/3212

摘要： A semiconductor capacitor and its method of fabrication are disclosed. A non-linear nitride layer is used to increase the surface area of a capacitor plate, resulting in increased capacitance without increase in chip area used for the capacitor.

摘要翻译： 公开了一种半导体电容器及其制造方法。 使用非线性氮化物层来增加电容器板的表面积，导致增加的电容，而不增加用于电容器的芯片面积。

公开(公告)号：US07737052B2

公开(公告)日：2010-06-15

申请号：US12042873

申请日：2008-03-05

申请人： Ritwik Bhatia ,  Griselda Bonilla ,  Alfred Grill ,  Joshua L. Herman ,  Son Van Nguyen ,  E. Todd Ryan ,  Hosadurga Shobha

发明人： Ritwik Bhatia ,  Griselda Bonilla ,  Alfred Grill ,  Joshua L. Herman ,  Son Van Nguyen ,  E. Todd Ryan ,  Hosadurga Shobha

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L23/58 ,  H01L23/48

CPC分类号： H01L21/76834 ,  H01L21/02348 ,  H01L21/76832

摘要： A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.

摘要翻译： 公开了包含相同方法和相关方法的电介质盖，互连结构。 本发明的电介质盖包括多层介电材料堆叠，其中叠层的至少一层在后沉积固化处理期间具有良好的抗氧化性，Cu扩散和/或显着更高的机械稳定性，并且包括Si-N键在 导电材料，例如Cu。 电介质盖表现出高压缩应力和高模量，并且在后沉积固化处理时仍然保持压应力，例如：铜低k后端（BEOL）纳米电子器件，导致较少的膜和器件 开裂和可靠性提高。

公开(公告)号：US07737029B2

公开(公告)日：2010-06-15

申请号：US12050354

申请日：2008-03-18

申请人： Jae-hak Kim ,  Griselda Bonilla ,  Steven E. Molis ,  Darryl D. Restaino ,  Hosadurga Shobha ,  Johnny Widodo

发明人： Jae-hak Kim ,  Griselda Bonilla ,  Steven E. Molis ,  Darryl D. Restaino ,  Hosadurga Shobha ,  Johnny Widodo

IPC分类号： H01L21/321

CPC分类号： H01L23/53233 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76876 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 Å to about 50 Å and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.

摘要翻译： 形成器件的方法包括在衬底上形成其中具有金属互连的第一电绝缘层，然后在金属互连的上表面上和第一电绝缘层上形成第一电绝缘阻挡层。 第一电绝缘阻挡层暴露于穿过第一电绝缘屏障并从金属互连的上表面除去氧的等离子体。 阻挡层的厚度可以在约5至约埃的范围内，等离子体可以是将金属互连的上表面上的氧转化为水的含氢等离子体。

公开(公告)号：US20050250248A1

公开(公告)日：2005-11-10

申请号：US11154794

申请日：2005-06-15

申请人： Stephen Buchwalter ,  Claudius Feger ,  Gareth Hougham ,  Nancy LaBianca ,  Hosadurga Shobha

发明人： Stephen Buchwalter ,  Claudius Feger ,  Gareth Hougham ,  Nancy LaBianca ,  Hosadurga Shobha

IPC分类号： C08G65/26 ,  H01L21/56 ,  H01L23/29 ,  H01L21/44

CPC分类号： C08G65/2654 ,  H01L21/563 ,  H01L23/293 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12042 ,  Y10T428/12528 ,  Y10T428/31511 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2224/0401

摘要： A reworkable thermoset epoxy-containing material that allows for a reworkable assembly such as a reworkable waferlevel underfilled miocroelectronic package. A method for using the reworkable thermoset material in the formation of a microelectronic package using this material.

摘要翻译： 可重复使用的热固性环氧树脂材料，其允许可再加工的组件，例如可再加工的晶片级底部填充的电子包装。 使用该材料在形成微电子封装中使用可再加工热固性材料的方法。

公开(公告)号：US20050101755A1

公开(公告)日：2005-05-12

申请号：US10642922

申请日：2003-08-18

申请人： Hosadurga Shobha ,  Venkat Sekharipuram ,  James McGrath ,  Atul Bhatnagar

发明人： Hosadurga Shobha ,  Venkat Sekharipuram ,  James McGrath ,  Atul Bhatnagar

IPC分类号： G02C7/02 ,  C08G63/00 ,  C08G79/02 ,  C08G79/04 ,  G02B1/04 ,  G02B5/23

CPC分类号： C08G79/04

摘要： High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.

摘要翻译： 提供高折射率，可熔融加工的聚膦酸盐及其制备方法。 这些聚合物特别适用于光学和眼科部件，例如透镜。 还提供了通过将本发明的聚合物注射成光学或眼科镜片的形式来制备光学和眼科镜片的方法。

公开(公告)号：US20130032945A1

公开(公告)日：2013-02-07

申请号：US13197325

申请日：2011-08-03

申请人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

发明人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/5222 ,  H01L21/768 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.

公开(公告)号：US20120175023A1

公开(公告)日：2012-07-12

申请号：US13420728

申请日：2012-03-15

申请人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Hosadurga Shobha ,  Tuan A. Vo

发明人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Hosadurga Shobha ,  Tuan A. Vo

IPC分类号： C23C8/00 ,  C23C28/04

CPC分类号： H01L21/76849 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867

摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.

摘要翻译： 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。

公开(公告)号：US20110108992A1

公开(公告)日：2011-05-12

申请号：US12615354

申请日：2009-11-10

申请人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

发明人： Kaushik Chanda ,  Cathryn J. Christiansen ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Son V. Nguyen ,  Shom Ponoth ,  Hosadurga Shobha

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.

摘要翻译： 金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。 在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。 在一对金属线之上形成介电材料层以封装空腔。 电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。

公开(公告)号：US20090239374A1

公开(公告)日：2009-09-24

申请号：US12050354

申请日：2008-03-18

申请人： Jae hak Kim ,  Griselda Bonilla ,  Steven E. Molis ,  Darryl D. Restaino ,  Hosadurga Shobha ,  Johnny Widodo

发明人： Jae hak Kim ,  Griselda Bonilla ,  Steven E. Molis ,  Darryl D. Restaino ,  Hosadurga Shobha ,  Johnny Widodo

IPC分类号： H01L21/4763

CPC分类号： H01L23/53233 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76876 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 Å to about 50 Å and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.

摘要翻译： 形成器件的方法包括在衬底上形成其中具有金属互连的第一电绝缘层，然后在金属互连的上表面上和第一电绝缘层上形成第一电绝缘阻挡层。 第一电绝缘阻挡层暴露于穿过第一电绝缘屏障并从金属互连的上表面除去氧的等离子体。 阻挡层的厚度可以在约5至约埃的范围内，等离子体可以是将金属互连的上表面上的氧转化为水的含氢等离子体。