公开(公告)号：US09911767B2

公开(公告)日：2018-03-06

申请号：US15399154

申请日：2017-01-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi Koezuka ,  Naoto Yamade ,  Yuhei Sato ,  Yutaka Okazaki ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477

CPC分类号： H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

公开(公告)号：US09882059B2

公开(公告)日：2018-01-30

申请号：US14571981

申请日：2014-12-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC分类号： H01L29/786 ,  H01L29/417

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

摘要： To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US09831326B2

公开(公告)日：2017-11-28

申请号：US15350213

申请日：2016-11-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Masayuki Sakakura ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Yuhei Sato

IPC分类号： H01L21/02 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1156 ,  H01L29/401 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.

公开(公告)号：US09812544B2

公开(公告)日：2017-11-07

申请号：US14935553

申请日：2015-11-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Hitomi Sato ,  Yuhei Sato

IPC分类号： H01L29/49 ,  H01L27/12 ,  H01L29/786 ,  H01L21/28 ,  H01L21/288 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/4908 ,  H01L21/28088 ,  H01L21/288 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7869

摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.

公开(公告)号：US09653613B2

公开(公告)日：2017-05-16

申请号：US15047940

申请日：2016-02-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Akihisa Shimomura ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Yuhei Sato ,  Naoki Okuno ,  Motoki Nakashima

IPC分类号： H01L29/786 ,  H01L29/51 ,  H01L29/06

CPC分类号： H01L29/7869 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0607 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969

摘要： Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first conductor in contact with a top surface of the oxide semiconductor, a second conductor in contact with the top surface of the oxide semiconductor, a first insulator over the first and second conductors and in contact with the top surface of the oxide semiconductor, a second insulator over the first insulator, a third conductor over the second insulator, and a third insulator over the third conductor. The third conductor overlaps with the first conductor with the first and second insulators positioned therebetween, and overlaps with the second conductor with the first and second insulators positioned therebetween. The first insulator contains oxygen. The second insulator transmits less oxygen than the first insulator. The third insulator transmits less oxygen than the first insulator.

公开(公告)号：US09559174B2

公开(公告)日：2017-01-31

申请号：US15068708

申请日：2016-03-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC分类号： H01L29/78 ,  H01L27/12 ,  H01L29/24 ,  C01G15/00 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

摘要： Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

摘要翻译： 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

公开(公告)号：US09472678B2

公开(公告)日：2016-10-18

申请号：US14580651

申请日：2014-12-23

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideomi Suzawa ,  Yasumasa Yamane ,  Yuhei Sato ,  Sachiaki Tezuka

IPC分类号： H01L29/786 ,  H01L29/16 ,  H01L27/088 ,  H01L27/06

CPC分类号： H01L29/7869 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1225 ,  H01L29/16

摘要： To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

摘要翻译： 为了提供具有稳定电特性的晶体管，具有低截止电流的晶体管，具有高导通电流的晶体管，包括晶体管的半导体器件或耐用的半导体器件。 半导体器件包括使用硅的第一晶体管，在第一晶体管上的氧化铝膜，以及在氧化铝膜上使用氧化物半导体的第二晶体管。 氧化物半导体的氢浓度低于硅。

公开(公告)号：US09450080B2

公开(公告)日：2016-09-20

申请号：US14570422

申请日：2014-12-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Naoto Yamade ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Masayuki Sakakura ,  Yuhei Sato ,  Yasumasa Yamane

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L21/441 ,  H01L21/425 ,  H01L21/383

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film.

摘要翻译： 半导体器件通过以下方法制造。 在第一栅电极和第一绝缘膜上形成第一氧化物半导体膜，在第一氧化物半导体膜上添加氧，然后在第一氧化物半导体膜上形成第二氧化物半导体膜。 然后进行热处理。 接下来，蚀刻第一绝缘膜的一部分，第一氧化物半导体膜的一部分和第二氧化物半导体膜的一部分，以形成具有突起的第一栅极绝缘膜。 接着，在第二氧化物半导体膜上形成一对电极，在第二氧化物半导体膜和一对电极上形成第三氧化物半导体膜。 然后，在第三氧化物半导体膜上形成第二栅极绝缘膜，在第二栅极绝缘膜上形成第二栅电极。

公开(公告)号：US09362136B2

公开(公告)日：2016-06-07

申请号：US14477115

申请日：2014-09-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/324 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

摘要翻译： 在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。 因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。 使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。