公开(公告)号：US12100731B2

公开(公告)日：2024-09-24

申请号：US16914161

申请日：2020-06-26

申请人： Intel Corporation

发明人： Kaan Oguz ,  I-Cheng Tung ,  Chia-Ching Lin ,  Sou-Chi Chang ,  Matthew Metz ,  Uygar Avci

IPC分类号： H01L27/06 ,  H01L49/02

CPC分类号： H01L28/65 ,  H01L27/0629 ,  H01L28/55

摘要： A capacitor device, such as a metal insulator metal (MIM) capacitor includes a seed layer including tantalum, a first electrode on the seed layer, where the first electrode includes at least one of ruthenium or iridium and an insulator layer on the seed layer, where the insulator layer includes oxygen and one or more of Sr, Ba or Ti. In an exemplary embodiment, the insulator layer is a crystallized layer having a substantially smooth surface. A crystallized insulator layer having a substantially smooth surface facilitates low electrical leakage in the MIM capacitor. The capacitor device further includes a second electrode layer on the insulator layer, where the second electrode layer includes a second metal or a second metal alloy.

公开(公告)号：US20240147867A1

公开(公告)日：2024-05-02

申请号：US17978145

申请日：2022-10-31

申请人： Intel Corporation

发明人： Punyashloka Debashis ,  Dominique A. Adams ,  Hai Li ,  Chia-Ching Lin ,  Dmitri Evgenievich Nikonov ,  Kaan Oguz ,  John J. Plombon ,  Ian Alexander Young

IPC分类号： H10N50/10 ,  G11C11/16 ,  H01L23/522 ,  H01L23/528 ,  H10B61/00 ,  H10N50/85

CPC分类号： H10N50/10 ,  G11C11/161 ,  H01L23/5226 ,  H01L23/5283 ,  H10B61/22 ,  H10N50/85

摘要： Magnetoelectric magnetic tunnel junction (MEMTJ) logic devices comprise a magnetoelectric switching capacitor coupled to a pair of magnetic tunnel junctions (MTJs) by a conductive layer. The logic state of the MEMTJ is represented by the magnetization orientation of the ferromagnetic layer of the magnetoelectric capacitor, which can be switched through the application of an appropriate input voltage to the MEMTJ. The magnetization orientation of the magnetoelectric capacitor ferromagnetic layer is read out by the MTJs. The conductive layer is positioned between the capacitor and the MTJs. The MTJ ferromagnetic free layers are exchange coupled to the ferromagnetic layer of the magnetoelectric capacitor. The potential of an MTJ free layer is based on a supply voltage applied to the reference layer of the MTJ. The MTJ reference layers have a magnetization orientation that is parallel or antiparallel to the magnetization orientations of the ferromagnetic layer of the magnetoelectric capacitor.

公开(公告)号：US20230402499A1

公开(公告)日：2023-12-14

申请号：US17835854

申请日：2022-06-08

申请人： Intel Corporation

发明人： Thomas Sounart ,  Kaan Oguz ,  Neelam Prabhu Gaunkar ,  Tristan Tronic

IPC分类号： H01L49/02 ,  H01G4/10 ,  H01G4/33 ,  H01G4/008

CPC分类号： H01L28/65 ,  H01G4/10 ,  H01G4/33 ,  H01G4/008

摘要： Capacitors for decoupling, power delivery, integrated circuits, related systems, and methods of fabrication are disclosed. Such capacitors include a transition metal oxide dielectric between two electrodes, at least one of which includes a conductive metal oxide layer on the transition metal oxide dielectric and a high density metal layer on the conductive metal oxide.

公开(公告)号：US11621391B2

公开(公告)日：2023-04-04

申请号：US16236060

申请日：2018-12-28

申请人： Intel Corporation

发明人： Chia-Ching Lin ,  Sasikanth Manipatruni ,  Tanay Gosavi ,  Dmitri Nikonov ,  Kaan Oguz ,  Ian A. Young

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16 ,  G11C11/14 ,  H01L27/11

摘要： A memory device comprises an interconnect comprises a spin orbit coupling (SOC) material. A free magnetic layer is on the interconnect, a barrier material is over the free magnetic layer and a fixed magnetic layer is over the barrier material, wherein the free magnetic layer comprises an antiferromagnet. In another embodiment, memory device comprises a spin orbit coupling (SOC) interconnect and an antiferromagnet (AFM) free magnetic layer is on the interconnect. A ferromagnetic magnetic tunnel junction (MTJ) device is on the AFM free magnetic layer, wherein the ferromagnetic MTJ comprises a free magnet layer, a fixed magnet layer, and a barrier material between the free magnet layer and the fixed magnet layer.

公开(公告)号：US20230086080A1

公开(公告)日：2023-03-23

申请号：US17482131

申请日：2021-09-22

申请人： Intel Corporation

发明人： Chia-Ching Lin ,  Dmitri Evgenievich Nikonov ,  Ian Alexander Young ,  John J. Plombon ,  Hai Li ,  Kaan Oguz ,  Tanay A. Gosavi ,  Emily Walker

IPC分类号： H01L27/22 ,  H01L43/12 ,  H01L43/02

摘要： In one embodiment, an apparatus includes a magnet, a first structure, and a second structure. The first structure includes a first conductive trace and a magnetoelectric material. The first conductive trace is coupled to an input voltage terminal, and the magnetoelectric material is coupled to the first conductive trace and the magnet. The second structure includes a superlattice structure and a second conductive trace. The superlattice structure includes one or more topological insulator materials. Moreover, the superlattice structure is coupled to the magnet and the second conductive trace, and the second conductive trace is coupled to an output voltage terminal.

公开(公告)号：US11575083B2

公开(公告)日：2023-02-07

申请号：US15943461

申请日：2018-04-02

申请人： Intel Corporation

发明人： Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Ian Young ,  Dmitri Nikonov ,  Chia-Ching Lin

IPC分类号： H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11C11/16 ,  H01L43/14 ,  B82Y25/00

摘要： An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization (e.g., perpendicular magnetization); a first structure adjacent to the magnetic junction, wherein the first structure comprises metal (e.g., Hf, Ta, W, Ir, Pt, Bi, Cu, Mo, Gf, Ge, Ga, or Au); an interconnect adjacent to the first structure; and a second structure adjacent to the interconnect such that the first structure and the second structure are on opposite surfaces of the interconnect, wherein the second structure comprises a magnet with a second magnetization (e.g., in-plane magnetization) substantially different from the first magnetization.

公开(公告)号：US11557629B2

公开(公告)日：2023-01-17

申请号：US16367133

申请日：2019-03-27

申请人： Intel Corporation

发明人： Kaan Oguz ,  Christopher Wiegand ,  Noriyuki Sato ,  Angeline Smith ,  Tanay Gosavi

IPC分类号： H01L27/22 ,  H01L43/14 ,  H01L43/10 ,  H01L43/06 ,  H01L43/08 ,  H01L43/04

摘要： A spin orbit memory device includes a material layer stack on a spin orbit electrode. The material layer stack includes a magnetic tunnel junction (MTJ) and a synthetic antiferromagnetic (SAF) structure on the MTJ. The SAF structure includes a first magnet structure and a second magnet structure separated by an antiferromagnetic coupling layer. The first magnet structure includes a first magnet and a second magnet separated by a single layer of a non-magnetic material such as platinum. The second magnet structure includes a stack of bilayers, where each bilayer includes a layer of platinum on a layer of a magnetic material such.

公开(公告)号：US11462678B2

公开(公告)日：2022-10-04

申请号：US16955723

申请日：2018-03-09

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Kaan Oguz ,  Charles Kuo ,  Mark Doczy ,  Noriyuki Sato

IPC分类号： H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

摘要： A pSTTM device includes a first electrode and a second electrode, a free magnet between the first electrode and the second electrode, a fixed magnet between the first electrode and the second electrode, a tunnel barrier between the free magnet and the fixed magnet, a coupling layer between the free magnet and the first electrode, where the coupling layer comprises a metal and oxygen and a follower between the coupling layer and the first electrode, wherein the follower comprises a magnetic skyrmion. The skyrmion follower may be either magnetically and electrically coupled to the free magnet to form a coupled system of switching magnetic layers. In an embodiment, the skyrmion follower has a weaker magnetic anisotropy than an anisotropy of the free magnet.

公开(公告)号：US11437567B2

公开(公告)日：2022-09-06

申请号：US16348364

申请日：2016-12-28

申请人： Intel Corporation

发明人： Justin Brockman ,  Christopher Wiegand ,  MD Tofizur Rahman ,  Daniel Ouelette ,  Angeline Smith ,  Juan Alzate Vinasco ,  Charles Kuo ,  Mark Doczy ,  Kaan Oguz ,  Kevin O'Brien ,  Brian Doyle ,  Oleg Golonzka ,  Tahir Ghani

IPC分类号： H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

摘要： An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.

公开(公告)号：US11430942B2

公开(公告)日：2022-08-30

申请号：US16021425

申请日：2018-06-28

申请人： INTEL CORPORATION

发明人： Kaan Oguz ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Chia-Ching Lin ,  Gary Allen

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01F41/30 ,  H01F10/32 ,  G11C11/16

摘要： A multilayer free magnetic layer structure for spin-based magnetic memory is provided herein. The multilayer free magnetic structure is employed in a magnetic tunnel junction (MTJ) and includes antiferromagnetically coupled magnetic layers. In some cases, the antiferromagnetic coupling is mediated by RKKY interaction with a Ru, Ir, Mo, Cu, or Rh spacer layer. In some cases, low damping magnetic materials, such as CoFeB, FeB, or CoFeBMo are used for the antiferromagnetically coupled magnetic layers. By employing the multilayer free magnetic structure for the MTJ as variously described herein, the critical or switching current can be significantly reduced compared to, for example, an MTJ employing a single-layer free magnetic layer. Thus, higher device efficiencies can be achieved. In some cases, the magnetic layers of the multilayer free magnetic structure are perpendicular magnets, which can be employed, for example, in perpendicular spin-orbit torque (pSOT) memory devices.