- 专利标题: Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
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申请号: US15943461申请日: 2018-04-02
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公开(公告)号: US11575083B2公开(公告)日: 2023-02-07
- 发明人: Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Ian Young , Dmitri Nikonov , Chia-Ching Lin
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Essential Patents Group, LLP
- 主分类号: H01L43/04
- IPC分类号: H01L43/04 ; H01L43/06 ; H01L43/10 ; G11C11/16 ; H01L43/14 ; B82Y25/00
摘要:
An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization (e.g., perpendicular magnetization); a first structure adjacent to the magnetic junction, wherein the first structure comprises metal (e.g., Hf, Ta, W, Ir, Pt, Bi, Cu, Mo, Gf, Ge, Ga, or Au); an interconnect adjacent to the first structure; and a second structure adjacent to the interconnect such that the first structure and the second structure are on opposite surfaces of the interconnect, wherein the second structure comprises a magnet with a second magnetization (e.g., in-plane magnetization) substantially different from the first magnetization.
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