公开(公告)号：US11386951B2

公开(公告)日：2022-07-12

申请号：US16022547

申请日：2018-06-28

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Brian Doyle ,  Kaan Oguz ,  Noriyuki Sato ,  Charles Kuo ,  Mark Doczy

IPC分类号： G11C11/56 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12

摘要： A MTJ device includes a free (storage) magnet and fixed (reference) magnet between first and second electrodes, and a programmable booster between the free magnet and one of the electrodes. The booster has a magnetic material layer. The booster may further have an interface layer that supports the formation of a skyrmion spin texture, or a stable ferromagnetic domain, within the magnetic material layer. A programming current between two circuit nodes may be employed to set a position of the skyrmion or magnetic domain within the magnetic material layer to be more proximal to, or more distal from, the free magnet. The position of the skyrmion or magnetic domain to the MTJ may modulate TMR ratio of the MTJ device. The TMR ratio modulation may be employed to discern more than two states of the MTJ device. Such a multi-level device may, for example, be employed to store 2 bits/cell.

公开(公告)号：US11348970B2

公开(公告)日：2022-05-31

申请号：US15960218

申请日：2018-04-23

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Benjamin Buford ,  Kaan Oguz ,  Noriyuki Sato ,  Charles Kuo ,  Mark Doczy

IPC分类号： H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/04 ,  H01L45/00 ,  B82Y25/00

摘要： A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.

公开(公告)号：US20210013397A1

公开(公告)日：2021-01-14

申请号：US16955723

申请日：2018-03-09

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Kaan Oguz ,  Charles Kuo ,  Mark Doczy ,  Noriyuki Sato

IPC分类号： H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

摘要： A pSTTM device includes a first electrode and a second electrode, a free magnet between the first electrode and the second electrode, a fixed magnet between the first electrode and the second electrode, a tunnel barrier between the free magnet and the fixed magnet, a coupling layer between the free magnet and the first electrode, where the coupling layer comprises a metal and oxygen and a follower between the coupling layer and the first electrode, wherein the follower comprises a magnetic skyrmion. The skyrmion follower may be either magnetically and electrically coupled to the free magnet to form a coupled system of switching magnetic layers. In an embodiment, the skyrmion follower has a weaker magnetic anisotropy than an anisotropy of the free magnet.

公开(公告)号：US11462678B2

公开(公告)日：2022-10-04

申请号：US16955723

申请日：2018-03-09

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Kaan Oguz ,  Charles Kuo ,  Mark Doczy ,  Noriyuki Sato

IPC分类号： H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

摘要： A pSTTM device includes a first electrode and a second electrode, a free magnet between the first electrode and the second electrode, a fixed magnet between the first electrode and the second electrode, a tunnel barrier between the free magnet and the fixed magnet, a coupling layer between the free magnet and the first electrode, where the coupling layer comprises a metal and oxygen and a follower between the coupling layer and the first electrode, wherein the follower comprises a magnetic skyrmion. The skyrmion follower may be either magnetically and electrically coupled to the free magnet to form a coupled system of switching magnetic layers. In an embodiment, the skyrmion follower has a weaker magnetic anisotropy than an anisotropy of the free magnet.

公开(公告)号：US11437567B2

公开(公告)日：2022-09-06

申请号：US16348364

申请日：2016-12-28

申请人： Intel Corporation

发明人： Justin Brockman ,  Christopher Wiegand ,  MD Tofizur Rahman ,  Daniel Ouelette ,  Angeline Smith ,  Juan Alzate Vinasco ,  Charles Kuo ,  Mark Doczy ,  Kaan Oguz ,  Kevin O'Brien ,  Brian Doyle ,  Oleg Golonzka ,  Tahir Ghani

IPC分类号： H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

摘要： An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.

公开(公告)号：US11227644B2

公开(公告)日：2022-01-18

申请号：US15942086

申请日：2018-03-30

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Noriyuki Sato ,  Kaan Oguz ,  Mark Doczy ,  Charles Kuo

IPC分类号： G11C11/16 ,  H01L43/12 ,  H01L27/22 ,  B82Y25/00

摘要： A spin orbit torque (SOT) memory device includes a MTJ device on a SOT electrode, where a first portion of the SOT electrode extends beyond a sidewall of the MTJ by a first length that is no greater than a height of the MTJ, and where a second portion of the first electrode extends from the sidewall and under the MTJ by a second length that is no greater than a width of the MTJ. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet.

公开(公告)号：US11257613B2

公开(公告)日：2022-02-22

申请号：US15942434

申请日：2018-03-31

申请人： Intel Corporation

发明人： Kaan Oguz ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Charles Kuo ,  Mark Doczy ,  Kevin O'Brien

IPC分类号： H01F10/32 ,  H01F41/30 ,  G11C11/16 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

摘要： A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material, where the SOT material includes iridium and manganese and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, a fixed layer and a tunnel barrier between the free layer and the fixed layer and a SAF structure above the fixed layer. The Ir—Mn SOT material and the free magnet have an in-plane magnetic exchange bias.

公开(公告)号：US10964886B2

公开(公告)日：2021-03-30

申请号：US16329169

申请日：2016-09-27

申请人： Intel Corporation

发明人： Brian Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Kevin O'Brien ,  Mark Doczy ,  Charles Kuo

IPC分类号： H01L29/82 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01F10/32 ,  H01L43/02 ,  H01L43/12

摘要： The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers and a tunnel barrier layer disposed between and abutting the fixed Heusler magnetic layer and the free Heusler magnetic layer, wherein the tunnel barrier layer is lattice matched to the free Heusler magnetic layer. In one embodiment, the tunnel barrier layer may be a strontium titanate layer.

公开(公告)号：US20190326353A1

公开(公告)日：2019-10-24

申请号：US15960218

申请日：2018-04-23

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Benjamin Buford ,  Kaan Oguz ,  Noriyuki Sato ,  Charles Kuo ,  Mark Doczy

IPC分类号： H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

摘要： A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.

公开(公告)号：US20190304523A1

公开(公告)日：2019-10-03

申请号：US15942086

申请日：2018-03-30

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Noriyuki Sato ,  Kaan Oguz ,  Mark Doczy ,  Charles Kuo

IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/12

摘要： A spin orbit torque (SOT) memory device includes a MTJ device on a SOT electrode, where a first portion of the SOT electrode extends beyond a sidewall of the MTJ by a first length that is no greater than a height of the MTJ, and where a second portion of the first electrode extends from the sidewall and under the MTJ by a second length that is no greater than a width of the MTJ. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet.