- 专利标题： Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication
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申请号： US15960218申请日： 2018-04-23
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公开(公告)号： US11348970B2公开(公告)日： 2022-05-31
- 发明人: Kevin O'Brien , Benjamin Buford , Kaan Oguz , Noriyuki Sato , Charles Kuo , Mark Doczy
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Essential Patents Group, LLP
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/02 ; H01L43/12 ; G11C11/16 ; H01L43/10 ; H01L43/04 ; H01L45/00 ; B82Y25/00
摘要：
A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.
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