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    MRAM CELLS INCLUDING COUPLED FREE FERROMAGNETIC LAYERS FOR STABILIZATION
    41.
    发明申请
    MRAM CELLS INCLUDING COUPLED FREE FERROMAGNETIC LAYERS FOR STABILIZATION 有权
    MRAM细胞包括用于稳定的联合免费FERROMAGNETIC层

    公开(公告)号：US20100090300A1

    公开(公告)日：2010-04-15

    申请号：US12248257

    申请日：2008-10-09

    Applicant: Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

    Inventor： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

    IPC: H01L29/82

    CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/1675 ,  Y10T428/1114 ,  Y10T428/1121

    Abstract: A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.

    Abstract translation: MRAM单元的自由铁磁数据存储层耦合到自由铁磁稳定层，该稳定层在一侧直接电耦合到接触电极，并在相对侧与自由铁磁数据存储层分离 ，通过间隔层。 间隔层提供两个自由层之间的耦合，该耦合是以下之一：铁磁耦合和反铁磁耦合。

    MEMORY DEVICE STRUCTURES INCLUDING PHASE-CHANGE STORAGE CELLS
    42.
    发明申请
    MEMORY DEVICE STRUCTURES INCLUDING PHASE-CHANGE STORAGE CELLS 有权
    存储器件结构包括相变存储器

    公开(公告)号：US20100067288A1

    公开(公告)日：2010-03-18

    申请号：US12233389

    申请日：2008-09-18

    Applicant: Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    Inventor： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    IPC: G11C11/00

    CPC classification number: G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

    Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

    Abstract translation: 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

    SPIN-TORQUE PROBE MICROSCOPE
    45.
    发明申请
    SPIN-TORQUE PROBE MICROSCOPE 有权
    旋转探针显微镜

    公开(公告)号：US20090242764A1

    公开(公告)日：2009-10-01

    申请号：US12059407

    申请日：2008-03-31

    Applicant: Haiwen Xi ,  Song S. Xue

    Inventor： Haiwen Xi ,  Song S. Xue

    IPC: G01N23/00 ,  G01B5/28

    CPC classification number: G01Q60/52 ,  G01N24/10 ,  G01R33/323

    Abstract: A spin-torque probe microscope and methods of using the same are described. The spin-torque probe microscope includes a cantilever probe body, a magnetic tip disposed at a distal end of the cantilever probe body, an electrically conductive sample disposed proximate to the magnetic tip, an electrical circuit providing a spin-polarized electron current to the electrically conductive sample, and a vibration detection element configured to sense vibration frequency of the cantilever probe body. The spin-polarized electron current is sufficient to alter a local electron spin or magnetic moment within the electrically conductive sample and be sensed by the magnetic tip.

    Abstract translation: 描述了自旋扭矩探针显微镜及其使用方法。 旋转扭矩探针显微镜包括悬臂探针体，设置在悬臂探头主体的远端的磁尖，靠近磁尖设置的导电样品，向电气提供自旋极化电子电流的电路 导电样品和被配置为感测悬臂探针体的振动频率的振动检测元件。 自旋极化电子电流足以改变导电样品内的局部电子自旋或磁矩，并由磁尖检测。

    Memory with separate read and write paths
    47.
    发明授权
    Memory with separate read and write paths 有权
    内存具有单独的读写路径

    公开(公告)号：US08422278B2

    公开(公告)日：2013-04-16

    申请号：US12974679

    申请日：2010-12-21

    Applicant: Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    IPC: G11C11/15

    CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

    Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁阻单元包括通过第一非磁性导电层与第一固定磁性层分离的自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括通过氧化物阻挡层与第二固定磁性层分离的自由磁性层。 写入电流通过巨磁电阻单元，以在高电阻状态和低电阻状态之间切换巨磁电阻单元。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

    Spin-torque memory with unidirectional write scheme
    49.
    发明授权
    Spin-torque memory with unidirectional write scheme 有权
    具有单向写入方案的自旋力矩存储器

    公开(公告)号：US08218356B2

    公开(公告)日：2012-07-10

    申请号：US12795020

    申请日：2010-06-07

    Applicant: Haiwen Xi ,  Dexin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Song S. Xue

    Inventor： Haiwen Xi ,  Dexin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Song S. Xue

    IPC: G11C11/00

    CPC classification number: G11C11/16 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G06T11/001 ,  G11C11/161 ,  G11C11/1675

    Abstract: Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

    Abstract translation: 具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。 存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。 换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。 这些元素具有单向写入方案。

    FLUX PROGRAMMED MULTI-BIT MAGNETIC MEMORY
    50.
    发明申请
    FLUX PROGRAMMED MULTI-BIT MAGNETIC MEMORY 有权
    FLUX编程多位磁记忆

    公开(公告)号：US20120127786A1

    公开(公告)日：2012-05-24

    申请号：US12953205

    申请日：2010-11-23

    Applicant: Nurul Amin ,  Dimitar V. Dimitrov ,  Haiwen Xi ,  Song S. Xue

    Inventor： Nurul Amin ,  Dimitar V. Dimitrov ,  Haiwen Xi ,  Song S. Xue

    IPC: G11C11/14 ,  H01L29/82

    CPC classification number: G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  Y10S977/935

    Abstract: An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.

    Abstract translation: 一种用于非易失性存储单元（诸如多位磁随机存取存储单元）的装置和相关方法。 根据各种实施例，第一磁性隧道结（MTJ）与具有磁性过滤器的第二MTJ相邻。 第一MTJ被编程为具有第一磁通量的第一逻辑状态，同时磁性滤波器吸收第一磁通量以防止第二MTJ被编程。

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