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公开(公告)号：US12210293B2
公开(公告)日：2025-01-28
申请号：US17783443
申请日：2020-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Adriaan Johan Van Leest
Abstract: A method for determining a measurement recipe describing one or more measurement settings for measuring a parameter of interest from a substrate subject to an etch induced parameter error, the etch induced parameter error affecting measurement of the parameter of interest in a recipe dependent manner. The method include obtaining parameter of interest set-up data relating to measurements of at least one set-up substrate on which the parameter of interest has various first induced set values and etch induced parameter set-up data relating to measurements of at least one set-up substrate on which the etch induced parameter has various second induced set values. The recipe is determined so as to minimize the effect of the etch induced parameter on measurement of the parameter of interest.
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公开(公告)号：US12044980B2
公开(公告)日：2024-07-23
申请号：US17296316
申请日：2019-10-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham Slachter , Wim Tjibbo Tel , Daan Maurits Slotboom , Vadim Yourievich Timoshkov , Koen Wilhelmus Cornelis Adrianus Van Der Straten , Boris Menchtchikov , Simon Philip Spencer Hastings , Cyrus Emil Tabery , Maxime Philippe Frederic Genin , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng
IPC: G05B19/418 , G03F7/00
CPC classification number: G03F7/70625 , G03F7/70616 , G05B19/4188 , G03F7/70525
Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.
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公开(公告)号：US11860548B2
公开(公告)日：2024-01-02
申请号：US17425355
申请日：2020-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Hermanus Adrianus Dillen , Marc Jurian Kea , Mark John Maslow , Koen Thuijs , Peter David Engblom , Ralph Timotheus Huijgen , Daan Maurits Slotboom , Johannes Catharinus Hubertus Mulkens
IPC: G03F7/00
CPC classification number: G03F7/705 , G03F7/7065 , G03F7/70525 , G03F7/70658
Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.
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公开(公告)号：US11513442B2
公开(公告)日：2022-11-29
申请号：US16644206
申请日：2018-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Mark John Maslow , Koenraad Van Ingen Schenau , Patrick Warnaar , Abraham Slachter , Roy Anunciado , Simon Hendrik Celine Van Gorp , Frank Staals , Marinus Jochemsen
IPC: G03F7/00 , G03F1/00 , G06T7/00 , H01L21/00 , G06F30/20 , G21K5/00 , G03F7/20 , H01L21/66 , G06F119/18
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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公开(公告)号：US11199782B2
公开(公告)日：2021-12-14
申请号：US16468304
申请日：2017-11-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Hans Erik Kattouw , Valerio Altini , Bearrach Moest
Abstract: A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.
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Patent Agency Ranking
公开(公告)号：US11143971B2
公开(公告)日：2021-10-12
申请号：US16966596
申请日：2019-01-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Marc Jurian Kea , Roy Anunciado
Abstract: A method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining an asymmetry of the probability density function, and determining an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.
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公开(公告)号：US11126093B2
公开(公告)日：2021-09-21
申请号：US16099452
申请日：2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Reiner Maria Jungblut , Leon Paul Van Dijk , Willem Seine Christian Roelofs , Wim Tjibbo Tel , Stefan Hunsche , Maurits Van Der Schaar
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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公开(公告)号：US20210216017A1
公开(公告)日：2021-07-15
申请号：US17214456
申请日：2021-03-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Wim Tjibbo Tel , Marinus Jochemsen , Stefan Hunsche
IPC: G03F7/20 , G06F30/398 , H01L21/66
Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US10725372B2
公开(公告)日：2020-07-28
申请号：US15546583
申请日：2016-01-20
Applicant: ASML Netherlands B.V.
Inventor： Wim Tjibbo Tel , Marinus Jochemsen , Frank Staals , Christopher Prentice , Laurent Michel Marcel Depre , Johannes Marcus Maria Beltman , Roy Werkman , Jochem Sebastiaan Wildenberg , Everhardus Cornelis Mos
IPC: G06F17/50 , G03F1/70 , G03F1/36 , G03F1/22 , G06T7/00 , G06F30/398 , G06F119/18 , G06F30/20 , G06F30/367
Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.
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50.发明授权公开(公告)号：US09360770B2
公开(公告)日：2016-06-07
申请号：US14562133
申请日：2014-12-05
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70641 , G03F7/70616 , G03F7/70625 , G03F9/7026
Abstract: A method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it; measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information; and calculating interfield focus corrections from the interfield focus variation information.
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