公开(公告)号：US07728035B2

公开(公告)日：2010-06-01

申请号：US10591157

申请日：2005-03-04

申请人： Andrew Douglas Baxter ,  Andrea Walmsley

发明人： Andrew Douglas Baxter ,  Andrea Walmsley

IPC分类号： A61K31/21 ,  C07C49/593

CPC分类号： C07C66/02

摘要： Compounds that may have anti-inflammatory activity are of general formula (I); wherein X1, is H or COR1, and X2 is H or COR2 but X1, and X2 are not both H; R1 and R2 are the same or different and are each C1-4 alkyl substituted with R3, or a four to seven-membered ring which can be optionally substituted with R8 and can contain one or more additional heteroatoms selected from O, S(O)n and NR9; is R3 is F, CF3, OR4, NR5R6 O, S(O)n R7; R4, R5 and R6 are the same or different and are each H or C1-4 alkyl optionally substituted with R3, or NR5R6 is a C4-6 heterocycloalkyl ring containing one or more heteroatoms selected from O, NR8 and S(O)n; each n is 0-2; R7 is C1-4 alkyl; R8 is as defined for R3 or C1-4 alkyl optionally substituted with R3 or halogen; and R9 is H or C1-4 alkyl; or a salt, solvate or hydrate thereof.

摘要翻译： 可具有抗炎活性的化合物具有通式（I）; 其中X1是H或COR1，X2是H或COR2，但X 1和X 2都不是H; R 1和R 2相同或不同，并且各自被R 3取代的C 1-4烷基或可任选被R 8取代的四元至七元环，并且可含有一个或多个选自O，S（O） n和NR9; R3为F，CF3，OR4，NR5R6O，S（O）n R7; R 4，R 5和R 6相同或不同，各自为H或任选被R 3取代的C 1-4烷基，或NR 5 R 6为含有一个或多个选自O，NR 8和S（O）n的杂原子的C 4-6异构烷基环; 每个n为0-2; R7是C1-4烷基; R8如R3或C1-4烷基所定义，任选被R3或卤素取代; 并且R 9为H或C 1-4烷基; 或其盐，溶剂合物或水合物。

公开(公告)号：US07713943B2

公开(公告)日：2010-05-11

申请号：US10640274

申请日：2003-08-14

申请人： Anke Klippel-Giese ,  Jörg Kaufmann

发明人： Anke Klippel-Giese ,  Jörg Kaufmann

IPC分类号： A61K31/70 ,  C07H21/04

CPC分类号： C12Q1/6883 ,  A61K38/17 ,  A61K38/45 ,  C12N15/1137 ,  C12N2310/14 ,  C12N2320/30 ,  C12Q1/6886 ,  C12Q2600/106 ,  C12Q2600/136 ,  C12Q2600/158 ,  C12Y207/11013 ,  G01N33/573 ,  G01N33/57484 ,  G01N2333/9121 ,  G01N2500/04 ,  G01N2800/52

摘要： The present invention is related to use of protein kinase N beta or a fragment or derivative thereof as a downstream target of the PI 3-kinase pathway, preferably as a downstream drug target of the PI 3-kinase pathway.

摘要翻译： 本发明涉及使用蛋白激酶Nβ或其片段或衍生物作为PI3-激酶途径的下游靶标，优选作为PI3-激酶途径的下游药物靶标。

公开(公告)号：US07713777B2

公开(公告)日：2010-05-11

申请号：US12200961

申请日：2008-08-29

申请人： Sang Wook Ryu

发明人： Sang Wook Ryu

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627

摘要： A method for manufacturing an image sensor according to an embodiment includes performing a plasma surface treatment on an oxide film microlens to mitigate high surface morphology. The image sensor can include a passivation layer on a substrate having a pad region and a pixel region and a color filter layer on the passivation layer. A first low temperature oxide can be formed over the substrate including the color filter layer; and an oxide film microlens can be formed on the first low temperature oxide layer. A portion of the first low temperature oxide layer can provide a seed microlens upon which a second low temperature oxide layer is formed to form the oxide film microlenses. The plasma surface treatment can then be applied with respect to the oxide film microlenses.

摘要翻译： 根据实施例的用于制造图像传感器的方法包括对氧化膜微透镜进行等离子体表面处理以减轻高表面形态。 图像传感器可以包括在具有衬垫区域和像素区域的衬底上的钝化层和钝化层上的滤色器层。 可以在包括滤色器层的基板上形成第一低温氧化物; 并且可以在第一低温氧化物层上形成氧化膜微透镜。 第一低温氧化物层的一部分可以提供种子微透镜，在其上形成第二低温氧化物层以形成氧化膜微透镜。 然后可以对氧化膜微透镜施加等离子体表面处理。

公开(公告)号：US07709965B2

公开(公告)日：2010-05-04

申请号：US11842851

申请日：2007-08-21

申请人： Seung Hyun Kim

发明人： Seung Hyun Kim

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76865 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are a metal line of a semiconductor device and a method of manufacturing the same. In one embodiment, the metal line includes a first interlayer dielectric layer pattern formed on a lower interconnection structure and having a via hole that exposes a lower interconnection of the lower interconnection structure, a first barrier pattern selectively covering a sidewall of the via hole and the lower interconnection, a second interlayer dielectric layer pattern on the first interlayer dielectric layer pattern and having a trench that exposes the via hole, a second barrier pattern covering an inner wall of the trench and the first barrier pattern, a seed pattern formed on the second barrier pattern, and a copper line formed on the seed pattern.

摘要翻译： 公开了半导体器件的金属线及其制造方法。 在一个实施例中，金属线包括形成在下互连结构上并具有暴露下互连结构的下互连的通孔的第一层间介质层图案，选择性地覆盖通孔的侧壁的第一阻挡图案和 下互连，第一层间介质层图案上的第二层间介质层图案，并且具有暴露通孔的沟槽，覆盖沟槽的内壁和第一势垒图案的第二阻挡图案，形成在第二层 阻挡图案和形成在种子图案上的铜线。

公开(公告)号：US07709000B2

公开(公告)日：2010-05-04

申请号：US11879460

申请日：2007-07-16

申请人： Michael J. P. Lawman ,  Patricia Lawman

发明人： Michael J. P. Lawman ,  Patricia Lawman

IPC分类号： A61K39/00

CPC分类号： A61K51/1069 ,  A61K38/00 ,  A61K39/39558 ,  A61K48/00 ,  A61K2039/505 ,  C07K14/705 ,  C07K16/28 ,  C07K16/3061 ,  Y10S530/827

摘要： The subject invention pertains to antibodies that have binding specificity for an antigen that is expressed on a subset of human, hematopoietic mononuclear cells, including a hematopoietic stem cell population, but is not expressed on normal, mature myeloid cells. In one embodiment, a monoclonal antibody, MG1, is provided. This antibody is useful in methods of isolating cell suspensions from human blood and marrow that can be employed in bone marrow transplantation, genetic therapy, and in treating other diseases of the hematopoietic system. Cell suspensions containing MG1+ human hematopoietic cells are also provided, as well as therapeutic methods employing the cell suspensions. The subject invention also pertains to the novel antigen recognized by the subject antibodies.

摘要翻译： 本发明涉及对在人，造血细胞单核细胞（包括造血干细胞群体）的子集上表达的抗原具有结合特异性的抗体，但不在正常的成熟骨髓细胞上表达。 在一个实施方案中，提供了单克隆抗体MG1。 该抗体可用于从人血液和骨髓中分离可用于骨髓移植，遗传治疗和治疗造血系统其他疾病的细胞悬液的方法。 还提供了含有MG1 +人造血细胞的细胞悬液，以及采用细胞悬浮液的治疗方法。 本发明还涉及由受试者抗体识别的新抗原。

公开(公告)号：US07700468B2

公开(公告)日：2010-04-20

申请号：US11835071

申请日：2007-08-07

申请人： Ji Houn Jung

发明人： Ji Houn Jung

IPC分类号： H01L21/425

CPC分类号： H01L29/0847 ,  H01L21/823814 ,  H01L29/66636 ,  H01L29/78

摘要： Provided are a semiconductor device and a method of fabricating the semiconductor device. In the method, a field oxide layer can be formed in a semiconductor substrate so as to define and active electrode including a gate oxide layer and a gate poly is formed in the active region. An etch groove is formed between the gate electrode and the field oxide layer. Dopant ions are implanted between the gate electrode and the field oxide layer so as to form a source/drain region.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 在该方法中，可以在半导体衬底中形成场氧化物层，以便限定并且在有源区中形成包括栅极氧化物层的有源电极和栅极聚合物。 在栅电极和场氧化物层之间形成蚀刻槽。 掺杂离子注入到栅电极和场氧化物层之间以形成源/漏区。

公开(公告)号：US07700401B2

公开(公告)日：2010-04-20

申请号：US11842787

申请日：2007-08-21

申请人： Min Hyung Lee

发明人： Min Hyung Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/14632 ,  H01L21/76846 ,  H01L21/76849 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687

摘要： An image sensor according to one embodiment of the present invention includes a semiconductor substrate having a CMOS circuit formed therein; an interlayer dielectric layer formed on the semiconductor substrate and including a trench formed therein; a metal wiring and a first conductive layer formed within the trench of the interlayer dielectric layer; an intrinsic layer formed on the semiconductor substrate including the first conductive layer and the interlayer dielectric layer; and a second conductive layer formed on the intrinsic layer.

摘要翻译： 根据本发明的一个实施例的图像传感器包括其中形成有CMOS电路的半导体衬底; 形成在所述半导体衬底上并且包括形成在其中的沟槽的层间电介质层; 金属布线和形成在层间介电层的沟槽内的第一导电层; 形成在包括第一导电层和层间介电层的半导体衬底上的本征层; 以及形成在本征层上的第二导电层。

公开(公告)号：US07683401B2

公开(公告)日：2010-03-23

申请号：US11519361

申请日：2006-09-12

申请人： Myung Jin Jung

发明人： Myung Jin Jung

IPC分类号： H01L27/088

CPC分类号： H01L29/0692 ,  H01L27/0207

摘要： Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a plurality of contact metals, and a gate electrode. The semiconductor substrate has an active region and a dummy active region, and a plurality of contact metals are formed in the active region. A gate electrode is located between the contact metals in the active region. A first distance between the active region and the dummy active region, and a second distance between an edge of the contact metal and an edge of the active region are set such that a channel characteristic of the active region is improved.

摘要翻译： 提供一种半导体器件。 半导体器件包括半导体衬底，多个接触金属和栅电极。 半导体衬底具有有源区和伪有源区，并且在有源区中形成多个接触金属。 栅电极位于有源区域中的接触金属之间。 激活区域和虚拟有源区域之间的第一距离以及接触金属的边缘与有源区域的边缘之间的第二距离被设定为使得有源区域的沟道特性得到改善。

公开(公告)号：US07679241B2

公开(公告)日：2010-03-16

申请号：US12401236

申请日：2009-03-10

申请人： Young Il Park

发明人： Young Il Park

IPC分类号： H02K7/06

CPC分类号： H02K5/1677 ,  H02K7/063

摘要： Disclosed is a vibration motor. The vibration motor includes a bracket including a support tube protruding from the bracket, a case coupled with the bracket, a support shaft supported by the bracket and the case, a bearing rotatably fitted around the support shaft, a rotor fixed to the bearing to rotate together with the bearing, thereby generating vibration, a stator mounted on the bracket to rotate the rotor through interaction with the rotor, a support member installed around the support tube, and a first washer interposed between the support tube and the bearing and supported by the support member.

摘要翻译： 公开了一种振动电动机。 所述振动马达包括支架，所述支架包括从所述支架突出的支撑管，与所述支架连接的壳体，由所述支架和所述壳体支撑的支撑轴，可旋转地装配在所述支撑轴周围的轴承，固定到所述轴承上以转动的转子 与轴承一起产生振动，定子安装在支架上以通过与转子的相互作用旋转转子，安装在支撑管周围的支撑构件，以及插入在支撑管和轴承之间的第一垫圈， 支持会员

公开(公告)号：US07678643B2

公开(公告)日：2010-03-16

申请号：US11528178

申请日：2006-09-26

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L21/8238 ,  H01L31/062

CPC分类号： H01L27/14643 ,  H01L27/14601 ,  H01L27/14689

摘要： Provided is a CMOS image sensor and method of manufacturing same. The CMOS image sensor includes a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor. A device isolation layer is formed on a first conductive type substrate. Gate electrodes of the transfer transistor, the reset transistor, the drive transistor, and the select transistor are formed on an active region of the substrate with gate insulating layers interposed therebetween. A first diffusion region is formed of a second conductive type in a first region of the active region, where the first region does not include a floating diffusion region between the transfer transistor and the reset transistor and the photodiode region. A second diffusion region is formed of the second conductive type in the floating diffusion region at a concentration lower than that of the second conductive type first diffusion region.

摘要翻译： 提供了一种CMOS图像传感器及其制造方法。 CMOS图像传感器包括光电二极管，传输晶体管，复位晶体管，驱动晶体管和选择晶体管。 器件隔离层形成在第一导电类型的衬底上。 传输晶体管的栅电极，复位晶体管，驱动晶体管和选择晶体管形成在衬底的有源区上，栅极绝缘层位于它们之间。 第一扩散区域由有源区域的第一区域中的第二导电类型形成，其中第一区域不包括传输晶体管和复位晶体管与光电二极管区域之间的浮动扩散区域。 第二扩散区域以比第二导电型第一扩散区域低的浓度在浮动扩散区域中由第二导电类型形成。