公开(公告)号：US07885103B2

公开(公告)日：2011-02-08

申请号：US11285535

申请日：2005-11-22

申请人： David Richard Trossen ,  Malcolm John Wing

发明人： David Richard Trossen ,  Malcolm John Wing

IPC分类号： G11C11/50

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  Y10S977/708 ,  Y10S977/732 ,  Y10S977/943

摘要： A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory.

公开(公告)号：US07710768B2

公开(公告)日：2010-05-04

申请号：US11813568

申请日：2006-06-21

申请人： Yasuyuki Naito

发明人： Yasuyuki Naito

IPC分类号： G11C11/50

CPC分类号： H01L27/10 ,  G11C23/00

摘要： A memory element which has high affinity with a conventional semiconductor process, which has a switching function of completely interrupting electric conduction paths by in a mechanical manner, and in which nonvolatile information recording is enabled is realized. An electromechanical memory which is formed on a substrate, which is formed by interposing a memory cell by electrodes, and which has a movable electrode that is a beam stretched in the air via a post portion is realized. According to the configuration, a nonvolatile memory can be realized by a simple structure, and it is possible to realize a high-performance electromechanical memory which is conventionally difficult to be realized, and in which the power consumption is low and the cost is low, and an electric apparatus using it.

摘要翻译： 具有与传统的半导体工艺具有高亲和性的存储元件，其具有通过机械方式完全中断导电路径的切换功能，并且其中实现了非易失性信息记录。 实现了在基板上形成的机电存储器，其通过电极插入存储单元而形成，并且具有通过柱部分在空中延伸的光束的可动电极。 根据该结构，能够通过简单的结构实现非易失性存储器，可以实现以往难以实现的高性能机电存储器，并且功耗低，成本低， 和使用它的电气设备。

公开(公告)号：US07668004B2

公开(公告)日：2010-02-23

申请号：US12019746

申请日：2008-01-25

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  Steven John Holmes ,  David Vaclav Horak ,  Charles William Koburger, III

IPC分类号： G11C11/50

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C2213/16 ,  G11C2213/77 ,  Y10S977/742 ,  Y10S977/939 ,  Y10S977/943

摘要： Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Means for sensing the state of the devices include measuring capacitance, and tunneling and field emission currents.

摘要翻译： 使用垂直纳米管的非易失性和辐射硬的开关和存储器件，并通过范德华力力可逆地保持状态和制造器件的方法。 用于感测装置状态的装置包括测量电容，以及隧穿和场发射电流。

公开(公告)号：US20080219048A1

公开(公告)日：2008-09-11

申请号：US12074645

申请日：2008-03-05

申请人： Ji-Myoung Lee ,  Min-Sang Kim ,  Eun-Jung Yun ,  Sung-Young Lee ,  In-Hyuk Choi

发明人： Ji-Myoung Lee ,  Min-Sang Kim ,  Eun-Jung Yun ,  Sung-Young Lee ,  In-Hyuk Choi

IPC分类号： H01H11/00 ,  G11C11/50

CPC分类号： H01L27/10 ,  G11C11/50 ,  H01H59/0009 ,  H01L27/105 ,  H01L27/115 ,  Y10T29/49105

摘要： A multibit electro-mechanical memory device capable of increasing an integrated level of memory devices, and a method of manufacturing the same, are provided. The memory device includes a substrate, a bit line on the substrate; a lower word line and a trap site isolated from the bit line, a pad electrode isolated from a sidewall of the trap site and the lower word line and connected to the bit line, a cantilever electrode suspended over a lower void in an upper part of the trap site, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a contact part for concentrating a charge induced from the cantilever electrode thereon in response to the charge applied from the lower word line and the trap site, the contact part protruding from an end part of the cantilever electrode, and an upper word line formed with an upper void on the cantilever electrode.

摘要翻译： 提供了能够提高存储器件集成度的多位机电存储器件及其制造方法。 存储器件包括衬底，衬底上的位线; 与位线隔离的下部字线和陷阱位置，从陷阱位置的侧壁和下部字线隔离并连接到位线的焊盘电极，悬挂在上部的下部空隙上的悬臂电极 并且通过施加到下字线的电荷引起的电场，连接到焊盘电极并且在垂直于第一和第二方向的第三方向上弯曲，用于聚集从悬臂电极引起的电荷的接触部分 响应于从下文字线和陷阱位置施加的电荷，从悬臂电极的端部突出的接触部分和在悬臂电极上形成有上部空隙的上字线。

公开(公告)号：US20080137404A1

公开(公告)日：2008-06-12

申请号：US11953218

申请日：2007-12-10

申请人： Jin-Jun PARK

发明人： Jin-Jun PARK

IPC分类号： G11C11/50 ,  H01L21/82

CPC分类号： H01L27/115 ,  B82Y10/00

摘要： A memory device includes a bit line, a first word line, a bit line contact, an electrode, a second word line and a contact tip. The bit line may extend along a first direction. The first word line is formed over the bit line and extends in a second direction. The bit line contact is formed between adjacent first word lines. The bit line contact may have an upper face substantially higher than the first word lines. The electrode contacting with the bit line contact may include an elastic material bending by an electric field among the electrode, the first word line and the second word line. The second word line is disposed over the electrode and corresponds to at least one of the first word lines. The contact tip formed at a lateral portion of the electrode may protrude toward the first and the second word lines.

摘要翻译： 存储器件包括位线，第一字线，位线接触，电极，第二字线和接触尖端。 位线可以沿着第一方向延伸。 第一字线形成在位线上并且在第二方向上延伸。 在相邻的第一字线之间形成位线接触。 位线接触可能具有比第一字线显着更高的上表面。 与位线接触的电极可以包括通过电极，第一字线和第二字线之间的电场弯曲的弹性材料。 第二字线设置在电极上并对应于第一字线中的至少一个。 形成在电极的侧面部分的接触尖端可朝向第一和第二字线突出。

公开(公告)号：US20080062755A1

公开(公告)日：2008-03-13

申请号：US11928651

申请日：2007-10-30

申请人： Claude Bertin ,  Thomas Rueckes ,  Brent Segal

发明人： Claude Bertin ,  Thomas Rueckes ,  Brent Segal

IPC分类号： G11C11/50

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H1/027 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/94 ,  Y10S977/943

摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node.

摘要翻译： 基于纳米管的开关元件和逻辑电路。 在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。 控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。 通道至少包括所述纳米管通道元件。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。

公开(公告)号：US20080043523A1

公开(公告)日：2008-02-21

申请号：US11465311

申请日：2006-08-17

申请人： Lianjun Liu ,  Bishnu P. Gogoi

发明人： Lianjun Liu ,  Bishnu P. Gogoi

IPC分类号： G11C11/50

CPC分类号： H01H59/0009 ,  H01G5/18 ,  H01H9/167

摘要： A circuit includes a micro electro mechanical switch and a detection circuit. The micro electro mechanical switch has a movable portion positioned to form an electrical connection between a first electrical contact and a second electrical contact in response to an electrostatic force provided by a top activation electrode and a bottom activation electrode. The detection circuit is electrically coupled to the top and bottom activation electrodes and is for detecting a first capacitance value between the top and bottom activation electrodes when the movable portion is in a first position and for detecting a second capacitance value when the movable portion is in a second position. By detecting a change in the capacitance, it can be determined if the switch is open or closed.

摘要翻译： 电路包括微机电开关和检测电路。 微电机械开关具有可移动部分，其被定位成响应于由顶部激活电极和底部激活电极提供的静电力而在第一电触点和第二电触头之间形成电连接。 检测电路电耦合到顶部和底部激活电极，并且用于当可移动部分处于第一位置时检测顶部和底部激活电极之间的第一电容值，并且当可移动部分处于第一位置时检测第二电容值 第二个位置 通过检测电容的变化，可以确定开关是开或关。

公开(公告)号：US20070230241A1

公开(公告)日：2007-10-04

申请号：US11239355

申请日：2005-09-30

申请人： Marc Bockrath

发明人： Marc Bockrath

IPC分类号： G11C11/50

CPC分类号： B81B3/0021 ,  B81B2201/014 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/18 ,  Y10S977/732 ,  Y10S977/943

摘要： A nanomechanical device includes a nanostructure, such as a MWNT, located between two electrodes. The device switches from an OFF state to an ON state by extension of at least one inner shell of the nanostructure relative to at least one outer shell of the nanostructure upon an application of a voltage between the electrodes. If desired, the device may also switch from the ON state to the OFF state upon an application of a gate voltage to a gate electrode located adjacent to the nanostructure.

摘要翻译： 纳米机械装置包括位于两个电极之间的纳米结构，例如MWNT。 通过在施加电极之间的电压的情况下，纳米结构的至少一个内壳相对于纳米结构的至少一个外壳延伸，从而将器件从OFF状态切换到ON状态。 如果需要，当将栅极电压施加到位于与纳米结构相邻的栅电极时，器件还可以从导通状态切换到断开状态。

公开(公告)号：US20050062062A1

公开(公告)日：2005-03-24

申请号：US10864572

申请日：2004-06-09

申请人： Claude Bertin ,  Thomas Rueckes ,  Brent Segal ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam Jaiprakash

发明人： Claude Bertin ,  Thomas Rueckes ,  Brent Segal ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam Jaiprakash

IPC分类号： G11C7/06 ,  G11C8/02 ,  G11C11/00 ,  G11C11/50 ,  G11C13/02 ,  G11C16/02 ,  G11C16/04 ,  G11C17/16 ,  G11C23/00 ,  H01H59/00 ,  H01J1/62 ,  H01L20060101 ,  H01L21/336 ,  H01L21/82 ,  H01L21/8246 ,  H01L27/112 ,  H01L27/115 ,  H01L27/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L29/745 ,  H01L29/76 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H03K17/16

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.

摘要翻译： 一次性可编程，非易失性场效应器件及其制作方法。 在一个实施例中，一次性可编程的非易失性场效应器件包括源极，漏极和栅极，源极和漏极之间具有场可调整通道。 源极，漏极和栅极中的每一个具有相应的端子。 电机械可偏转的纳米管开关元件电耦合到源极，漏极和栅极中的一个，并且具有可机电偏转的纳米管元件，其被定位成响应于电刺激而可偏转以在第二电极之间形成非易失性闭合电状态 源，漏，门之一及其相应的终端。

公开(公告)号：US20050036365A1

公开(公告)日：2005-02-17

申请号：US10918085

申请日：2004-08-13

申请人： Claude Bertin ,  Thomas Rueckes ,  Brent Segal

发明人： Claude Bertin ,  Thomas Rueckes ,  Brent Segal

IPC分类号： G11C11/00 ,  G11C11/21 ,  G11C11/50 ,  G11C13/02 ,  G11C23/00 ,  H01H1/027 ,  H01H59/00 ,  H01L21/00 ,  H01L27/28 ,  H01L29/06 ,  H01L29/73 ,  H01L29/772 ,  H01L29/78 ,  H01L51/30

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.

摘要翻译： 基于纳米管的开关元件具有由此制成的多个控制和电路。 开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。 相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。 控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。 根据结构，开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。