公开(公告)号：US07973283B2

公开(公告)日：2011-07-05

申请号：US12232834

申请日：2008-09-25

Applicant: Joe Wang ,  Jack Jau

Inventor： Joe Wang ,  Jack Jau

IPC: G01N23/00

CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0044 ,  H01J2237/006 ,  H01J2237/2817

Abstract: A method for regulating sample surface charge has been proposed in this invention. The processes of applying a charged particle beam to a first area and applying a flood energized beam gun with gaseous molecules to a second area are executed in the method when the sample is in both continuous and Leap & Scan movements. The second area is located at a predetermined distance from the first area behind or ahead of the first area being scanned with respect to the movement of the sample. Thus, the surface of the sample may be regulated.

Abstract translation: 本发明提出了一种调节样品表面电荷的方法。 当样品处于连续和Leap＆Scan移动中时，在方法中执行将带电粒子束施加到第一区域并将带有气态分子的泛光束枪施加到第二区域的过程。 第二区域位于相对于样品的运动被扫描的第一区域的后面或之前的第一区域的预定距离处。 因此，可以调节样品的表面。

公开(公告)号：US07800083B2

公开(公告)日：2010-09-21

申请号：US11935738

申请日：2007-11-06

Applicant: Bo H. Vanderberg ,  William F. DiVergilio

Inventor： Bo H. Vanderberg ,  William F. DiVergilio

IPC: G21G1/10

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/06366

Abstract: A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.

Abstract translation: 一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极 发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

公开(公告)号：US07777197B2

公开(公告)日：2010-08-17

申请号：US11425974

申请日：2006-06-22

Applicant: Amir Al-Bayati ,  Lester A. D'Cruz ,  Alexandros T. Demos ,  Dale R. Dubois ,  Khaled A. Elsheref ,  Naoyuki Iwasaki ,  Hichem M'Saad ,  Juan Carlos Rocha-Alvarez ,  Ashish Shah ,  Takashi Shimizu

Inventor： Amir Al-Bayati ,  Lester A. D'Cruz ,  Alexandros T. Demos ,  Dale R. Dubois ,  Khaled A. Elsheref ,  Naoyuki Iwasaki ,  Hichem M'Saad ,  Juan Carlos Rocha-Alvarez ,  Ashish Shah ,  Takashi Shimizu

IPC: G01N23/00

CPC classification number: H01J37/317 ,  B23K15/00 ,  C23F4/00 ,  H01J37/026 ,  H01J37/20 ,  H01J2237/004 ,  H01J2237/0044 ,  H01J2237/2001 ,  H01J2237/304 ,  H01J2237/3156 ,  H01J2237/316 ,  H01J2237/3165 ,  H01L21/67115

Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

Abstract translation: 提供了用于基板的电子束处理的方法和装置。 提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

公开(公告)号：US20100181480A1

公开(公告)日：2010-07-22

申请号：US12688095

申请日：2010-01-15

Applicant: Tomokazu SHIMAKURA ,  Masaki HASEGAWA

Inventor： Tomokazu SHIMAKURA ,  Masaki HASEGAWA

IPC: G01N23/225

CPC classification number: H01J37/026 ,  H01J37/04 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/153 ,  H01J2237/1536 ,  H01J2237/2008

Abstract: According to the present invention, a charged particle beam device has an unlimitedly rotatable sample stage and an electric field control electrode for correcting electric field distortion at a sample peripheral part. A voltage is applied to a sample on the unlimitedly rotatable sample stage through a retarding electrode that is in contact with a holder receiver at a rotation center of a rotary stage. An equipotential plane on the electric field control electrode is varied by applying a voltage to the electric field control electrode, and following this the equipotential plane at a sample edge is corrected, which enables the sample to be observed as far as its edge.

Abstract translation: 根据本发明，带电粒子束装置具有无限旋转的样品台和用于校正样品周边部分的电场失真的电场控制电极。 通过在旋转台的旋转中心处与保持器接收器接触的延迟电极将电压施加到无限可旋转的样品台上的样品。 通过向电场控制电极施加电压来改变电场控制电极上的等电位面，并且在此之后校正样品边缘处的等电位面，使得可以将样品观察到其边缘。

公开(公告)号：US07714288B2

公开(公告)日：2010-05-11

申请号：US12149218

申请日：2008-04-29

Applicant: Tasuku Yano ,  Zhaohui Cheng ,  Takashi Furukawa ,  Osamu Nasu

Inventor： Tasuku Yano ,  Zhaohui Cheng ,  Takashi Furukawa ,  Osamu Nasu

IPC: G21K7/00 ,  G21G5/00 ,  G01N23/00 ,  H01J3/14

CPC classification number: G01N23/225 ,  H01J37/026 ,  H01J37/248 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/28

Abstract: Electrification affected on a surface of a sample which is caused by irradiation of a primary charged particle beam is prevented when plural frames are integrated to obtain an image of a predetermined area of the sample in a charged particle beam apparatus. The predetermined area of the sample is scanned with a primary electron beam from an electron gun, and plural frames are generated and integrated while detecting generated secondary electrons with a detector to obtain the image of the predetermined area. If it is determined by a detection signal of the detector that an electrification amount at the predetermined area becomes a specified value when generating plural frames, an electricity removal voltage is applied to a boosting electrode to remove or reduce the electrification, prior to generation of the next frame. Accordingly, the signal-to-noise ratio of the image obtained by integrating plural frames can be improved.

Abstract translation: 当多个帧被一体化以防止在带电粒子束装置中的样品的预定区域的图像时，防止了由一次带电粒子束的照射引起的样品表面影响的电气化。 用来自电子枪的一次电子束扫描样品的预定区域，并且用检测器检测产生的二次电子并产生并整合多个帧以获得预定区域的图像。 如果通过检测器的检测信号确定当产生多个帧时，预定区域的通电量变为规定值，则在生成多个帧之前将电去除电压施加到升压电极以去除或减少通电， 下一帧。 因此，可以提高通过对多个帧进行积分而获得的图像的信噪比。

公开(公告)号：US07692139B2

公开(公告)日：2010-04-06

申请号：US11872576

申请日：2007-10-15

Applicant: Bon Woong Koo ,  Frank Sinclair

Inventor： Bon Woong Koo ,  Frank Sinclair

IPC: H01J37/317

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/04 ,  H01J2237/05

Abstract: A system for ion beam neutralization includes a beamguide configured to transport an ion beam through a dipole field, a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The system may further include a charged particle source having one or more apertures configured to inject charged particles into the ion beam. The system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam.

Abstract translation: 用于离子束中和的系统包括被配置为将离子束传送通过偶极场的波导，第一磁体阵列和被配置为产生多尖点磁场的第二磁体阵列，第一磁体阵列位于第一 离子束路径的一侧和第二磁体阵列位于离子束路径的第二侧上。 该系统还可以包括具有一个或多个孔的带电粒子源，所述孔被配置为将带电粒子注入到离子束中。 该系统还可以将一个或多个孔与第一磁体阵列和第二磁体阵列中的至少一个对准，以使来自带电粒子源的注入的带电粒子与一个或多个磁性区域对准，以使有效的带电粒子扩散成 离子束。

公开(公告)号：US07655922B2

公开(公告)日：2010-02-02

申请号：US11568000

申请日：2006-12-07

Applicant: Donna L. Smatlak ,  Gordon C. Angel ,  Rajesh Dorai

Inventor： Donna L. Smatlak ,  Gordon C. Angel ,  Rajesh Dorai

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055 ,  H01J2237/152 ,  H01J2237/31701

Abstract: Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.

Abstract translation: 公开了将电子限制在离子注入机中的技术。 在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。 该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上 路径，第一面反对第二面。 第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。

公开(公告)号：US20100006756A1

公开(公告)日：2010-01-14

申请号：US11917838

申请日：2006-06-15

Applicant: Norimichi Anazawa ,  Jun Nitta ,  Michio Ohshima ,  Tatenori Jinriki ,  Naoyuki Nakamura ,  Akira Yonezawa ,  Ken-ichi Kobayashi ,  Hao Zhang

Inventor： Norimichi Anazawa ,  Jun Nitta ,  Michio Ohshima ,  Tatenori Jinriki ,  Naoyuki Nakamura ,  Akira Yonezawa ,  Ken-ichi Kobayashi ,  Hao Zhang

IPC: G01N23/225

CPC classification number: H01J37/026 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/16 ,  H01J2237/18 ,  H01J2237/26 ,  H01J2237/3175

Abstract: When the surface of a semiconductor wafer, a photomask or the like sample is charged by irradiation with a charged particle beam, the charging is liable to hamper image observation, inspection and handling. Therefore, the sample and the surface or vicinity of the sample being charged by an electron beam or the like is held in an atmosphere or a reduced pressure atmosphere or in a predetermined gaseous atmosphere within a preliminary evacuation chamber, a sample chamber or the like, containing a soft X-ray generator which irradiates the sample or the vicinity thereof with soft X-rays which are controlled to generate positive ions and negative ions and remove charges on the surface of the sample.

Abstract translation: 当通过照射带电粒子束来对半导体晶片，光掩模等样品的表面进行充电时，充电将妨碍图像观察，检查和处理。 因此，将样品和被电子束等充电的样品的表面或附近保持在预抽真空室，样品室等中的气氛或减压气氛中或预定的气体气氛中， 含有软X射线发生器，用软X射线照射样品或其附近，该X射线被控制以产生正离子和负离子并去除样品表面上的电荷。

公开(公告)号：US07601976B2

公开(公告)日：2009-10-13

申请号：US11641540

申请日：2006-12-18

Applicant: Raymond Hill ,  Colin August Sanford ,  Lawrence Scipioni ,  Mark DiManna ,  Michael Tanguay

Inventor： Raymond Hill ,  Colin August Sanford ,  Lawrence Scipioni ,  Mark DiManna ,  Michael Tanguay

IPC: H01J37/30 ,  H01L21/266 ,  H01L21/263

CPC classification number: H01J37/141 ,  H01J37/026 ,  H01J37/08 ,  H01J2237/0042 ,  H01J2237/0805 ,  H01J2237/1405 ,  H01J2237/28 ,  H01J2237/317 ,  H01J2237/31749

Abstract: A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.

Abstract translation: 双光束系统包括离子束系统和具有磁性物镜的扫描电子显微镜。 离子束系统适于在存在来自SEM物镜的磁场的情况下最佳地操作，使得物镜在离子束操作期间不被关闭。 可选的二次粒子检测器和可选的电荷中和泛喷枪适于在存在磁场的情况下操作。 磁性物镜被设计成具有恒定的热信号，不管产生的磁场的强度如何，使得当磁场改变时，系统不需要时间稳定。

公开(公告)号：US20090181534A1

公开(公告)日：2009-07-16

申请号：US12013799

申请日：2008-01-14

Applicant: Christos D. Dimitrakopoulos ,  Kam L. Lee ,  Robert L. Wisnieff

Inventor： Christos D. Dimitrakopoulos ,  Kam L. Lee ,  Robert L. Wisnieff

IPC: H01L21/4763 ,  B05C11/00

CPC classification number: H01L21/76825 ,  B29C71/04 ,  B29C2035/0877 ,  H01J37/026 ,  H01J37/317 ,  H01J2237/0044 ,  H01J2237/024 ,  H01J2237/047 ,  H01J2237/3156 ,  H01L21/3105 ,  H01L21/76835

Abstract: An ultra low-k dielectric material layer is formed on a semiconductor substrate. In one embodiment, a grid of wires is placed at a distance above a top surface of the ultra low-k dielectric material layer and is electrically biased such that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. In another embodiment, a polymeric conductive layer is formed directly on the ultra low-k dielectric material layer and is electrically biased so that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. By maintaining the total electron emission coefficient at 1.0, charging of the substrate is avoided, thus protecting any device on the substrate from any adverse changes in electrical characteristics.

Abstract translation: 在半导体基板上形成超低k电介质材料层。 在一个实施例中，电线格栅放置在超低k电介质材料层的顶表面上方的距离处，并被电偏置，使得在电子束固化中使用的电子的能量下，总电子发射系数为1.0 超低k电介质材料层。 在另一个实施例中，聚合物导电层直接形成在超低k电介质材料层上并被电偏置，使得在超低k电介质的电子束固化中使用的电子能量下，总电子发射系数变为1.0 材料层。 通过将总电子发射系数保持在1.0，避免了衬底的充电，从而保护衬底上的任何器件免受电特性的任何不利变化。