摘要:
An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.
摘要:
[Problem] To adjust astigmatism quickly with a simple algorithm by utilizing an autofocus estimation value of an image obtained from a pattern formed on a sample. [Means] A charged particle beam apparatus 300 for observing and estimating a sample W by applying a charged particle beam to sample W to detect secondary charged particles, such as electrons emitted from the sample, reflected electrons and backscattered electrons comprises astigmatism adjusting means 17 for adjusting astigmatism of the charged particle beam. Astigmatism adjusting means 17 is supplied with a correction voltage which maximizes a focus estimation value obtained from a pattern formed on sample W. Astigmatism adjusting means 17 is a multipole including a plurality of pairs of electrodes or coils facing each other to place the optical axis of the charged particle beam at the center. Also disclosed is a charged particle beam apparatus 400 capable of observation and estimation of a sample surface in a condition where no charge up exists over the whole sample W.
摘要:
A surface-potential distribution measuring apparatus includes an electron gun, an electron-beam optical system, an electron-emission panel, a detector, and a control system. The electron-beam optical system is located between the electron gun and a sample, and focuses a beam of electrons emitted from the electron gun to the surface of the sample. The electron-emission panel is located near the sample to be collided with at least part of the electrons via the sample, and emits secondary electrons corresponding to the number of collided electrons. The detector detects at least part of the secondary electrons. The control system obtains potential distribution on the surface of the sample based on a detection result obtained by the detector.
摘要:
In a charged particle or electron beam system, gas, such as argon or helium, is introduced over the surface of a substrate and ionized to neutralize charge accumulating on the surface from interactions caused by the impinging charged particles. The gas can be distributed throughout the gas chamber or confined to an area above the substrate. The radiation beam to ionize the gas can be directed across or towards the surface of the substrate. In the latter case, the gas pressure may be reduced to zero.
摘要:
Disclosed is an electrostatic chucking method, comprising the steps of: (a) placing a substrate to be chucked electrostatically on a chucking material containing an electrode; (b) chucking the substrate to the chucking material by supplying a predetermined electrical potential to the electrode in the chucking material; (c) removing the substrate from the chucking material; and (d) eliminating residual charges on the chucking material by sputtering it with a plasma gas for a predetermined period. Further, the plasma gas may be capable of etching the chucking material.
摘要:
Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.
摘要:
Methods are provided for operating a particle-optical device, wherein electrical charging of a sample to be examined is reduced. The particle-optical device includes a vacuum chamber for receiving a sample, a particle source for generating a primary particle beam directed to the sample, a scan generator for directed guidance of the primary particle beam over the sample surface, and at least one detector for detecting interaction products created during the interaction between the primary particle beam and the sample.
摘要:
An object of the present invention is to provide a charged particle beam apparatus that effectively removes electrical charges from an electrostatic chuck.In order to achieve the above object, the charged particle beam apparatus of the present invention includes a sample chamber that maintains a space containing an electrostatic chuck mechanism (5) in a vacuum state; and in which the charged particle beam apparatus includes an ultraviolet light source (6) to irradiate ultraviolet light within the sample chamber, and a irradiation target member irradiated by the ultraviolet light; and the irradiation target member is placed perpendicular to the adsorption surface of the electrostatic chuck.
摘要:
When the surface of a semiconductor wafer, a photomask or the like sample is charged by irradiation with a charged particle beam, the charging is liable to hamper image observation, inspection and handling. Therefore, the sample and the surface or vicinity of the sample being charged by an electron beam or the like is held in an atmosphere or a reduced pressure atmosphere or in a predetermined gaseous atmosphere within a preliminary evacuation chamber, a sample chamber or the like, containing a soft X-ray generator which irradiates the sample or the vicinity thereof with soft X-rays which are controlled to generate positive ions and negative ions and remove charges on the surface of the sample.
摘要:
An imprint method is constituted by a step of curing a resin material formed on a substrate in a state in which an imprint pattern of a mold is in contact or proximity with the resin material, and a step of parting the mold from the cured resin material. The parting is effected while irradiating an entire area in which the imprint pattern of the mold is formed and the cured resin material with an electromagnetic wave for ionizing gaseous molecules in an atmosphere in which the mold and the cured resin material are placed.