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    APPARATUS FOR SUPPRESSION OF ARCS IN AN ELECTRON BEAM GENERATOR
    1.
    发明申请
    APPARATUS FOR SUPPRESSION OF ARCS IN AN ELECTRON BEAM GENERATOR 有权

    公开(公告)号：US20170133191A1

    公开(公告)日：2017-05-11

    申请号：US15341699

    申请日：2016-11-02

    Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

    Inventor： Rainer Labitzke ,  Severin Dominok ,  Gösta Mattausch ,  Stefan Weiss

    IPC: H01J29/98

    CPC classification number: H01J29/98 ,  H01J37/24 ,  H01J2237/0206 ,  H01J2237/06366 ,  H01J2237/3132

    Abstract: An apparatus for suppression of arcs in an electron beam generator including: a first module providing an operating voltage; a second module including a coil suitable for a voltage of at least 10 kV, and at least one free-wheeling diode connected in parallel to the coil; a third module including a first circuit component configured to detect a first actual value for electric voltage, and a first signal is producible when the first actual value falls below a first threshold value, a second circuit component by which a second actual value for electric current is detectable, and a second signal is generated when the second actual value exceeds a second threshold value, a control logic, which optionally links the first and second signals and a resultant output signal is producible; a semiconductor-based switch suitable for the voltage of at least 10 kV, which is opened based on the output signal.

    Charged particle beam system having multiple user-selectable operating modes
    2.
    发明授权
    Charged particle beam system having multiple user-selectable operating modes 有权
    具有多个用户可选操作模式的带电粒子束系统

    公开(公告)号：US08253118B2

    公开(公告)日：2012-08-28

    申请号：US12579237

    申请日：2009-10-14

    Applicant: Shouyin Zhang ,  Tom Miller ,  Sean Kellogg ,  Anthony Graupera

    Inventor： Shouyin Zhang ,  Tom Miller ,  Sean Kellogg ,  Anthony Graupera

    IPC: H01J49/10 ,  H01J27/02

    CPC classification number: H01J37/3005 ,  H01J37/3023 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/06366 ,  H01J2237/0815 ,  H01J2237/31749

    Abstract: A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

    Abstract translation: 一种在采用电感耦合等离子体离子源的聚焦离子束（FIB）系统中进行铣削和成像的方法，其中利用两组FIB系统操作参数：第一组，表示用于在铣削中操作FIB系统的优化参数 模式，以及表示用于在成像模式下操作的优化参数的第二组。 这些操作参数可以包括ICP源中的气体压力，ICP源的RF功率，离子提取电压，以及在一些实施例中，FIB系统离子列内的各种参数，包括透镜电压和光束限定孔直径 。 优化的铣削工艺提供了从基材表面快速去除材料的体积（低空间分辨率）的最大研磨速度。 优化的成像过程提供最小化的材料去除和更高的空间分辨率，用于改进正在研磨的衬底区域的成像。

    Plasma electron flood for ion beam implanter
    3.
    发明授权
    Plasma electron flood for ion beam implanter 有权
    离子束注入机的等离子体电子泛滥

    公开(公告)号：US07800083B2

    公开(公告)日：2010-09-21

    申请号：US11935738

    申请日：2007-11-06

    Applicant: Bo H. Vanderberg ,  William F. DiVergilio

    Inventor： Bo H. Vanderberg ,  William F. DiVergilio

    IPC: G21G1/10

    CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/06366

    Abstract: A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.

    Abstract translation: 一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极 发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

    Slotted antenna waveguide plasma source
    4.
    发明授权
    Slotted antenna waveguide plasma source 失效
    开槽天线波导等离子体源

    公开(公告)号：US07305935B1

    公开(公告)日：2007-12-11

    申请号：US10925499

    申请日：2004-08-25

    Applicant: John Foster

    Inventor： John Foster

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC classification number: C23C14/357 ,  H01J27/18 ,  H01J37/077 ,  H01J37/08 ,  H01J37/32422 ,  H01J37/32678 ,  H01J2237/0041 ,  H01J2237/06366 ,  H01J2237/3114 ,  H01J2237/31701 ,  H05H1/46

    Abstract: A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.

    Abstract translation: 已经证明通过使用无窗无电极矩形开槽天线波导等离子体源的微波注入产生的高密度等离子体。 等离子探头测量表明，该源可适用于低功率离子推进器应用，离子注入和相关应用。 这种开槽天线等离子体源发明以电子回旋共振（ECR）为原则。 它没有窗户，它是完全无电极的，因此其使用寿命长，仅受微波发生器本身或带电粒子提取网格的限制（如果使用）。 高密度等离子体源还可用于提取可用作离子源光束中和应用的等离子体阴极中和器的电子束。

    Plasma cathode charged particle lithography system
    6.
    发明授权
    Plasma cathode charged particle lithography system 有权
    等离子体阴极带电粒子光刻系统

    公开(公告)号：US09269542B2

    公开(公告)日：2016-02-23

    申请号：US14070148

    申请日：2013-11-01

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Frank Sinclair ,  Joseph C. Olson

    IPC: H01J37/317 ,  H01J37/32

    CPC classification number: H01J37/3177 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3174 ,  H01J37/32422 ,  H01J2237/06366 ,  H01J2237/31754 ,  H01J2237/31755

    Abstract: In one embodiment, a system for patterning a substrate includes a plasma chamber; a power source to generate a plasma within the plasma chamber; and an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber. The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma. The system further includes a projection optics system to direct at least one of the plurality of charged particle beamlets to the substrate.

    Abstract translation: 在一个实施例中，用于图案化衬底的系统包括等离子体室; 用于在等离子体室内产生等离子体的电源; 以及包括多个孔并且沿着等离子体室的一侧设置的提取板系统。 提取板系统被配置为接收相对于等离子体室偏压提取板系统的提取电压，其中多个孔被配置为从等离子体提取多个相应的带电粒子子束。 该系统还包括投影光学系统，用于将多个带电粒子子束中的至少一个引导到衬底。

    PLASMA CATHODE CHARGED PARTICLE LITHOGRAPHY SYSTEM
    7.
    发明申请
    PLASMA CATHODE CHARGED PARTICLE LITHOGRAPHY SYSTEM 有权
    等离子体阴极充电粒子光刻系统

    公开(公告)号：US20150123006A1

    公开(公告)日：2015-05-07

    申请号：US14070148

    申请日：2013-11-01

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Frank Sinclair ,  Joseph C. Olson

    IPC: H01J37/317 ,  H01J37/32

    CPC classification number: H01J37/3177 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3174 ,  H01J37/32422 ,  H01J2237/06366 ,  H01J2237/31754 ,  H01J2237/31755

    Abstract: In one embodiment, a system for patterning a substrate includes a plasma chamber; a power source to generate a plasma within the plasma chamber; and an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber. The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma. The system further includes a projection optics system to direct at least one of the plurality of charged particle beamlets to the substrate.

    Abstract translation: 在一个实施例中，用于图案化衬底的系统包括等离子体室; 用于在等离子体室内产生等离子体的电源; 以及包括多个孔并且沿着等离子体室的一侧设置的提取板系统。 提取板系统被配置为接收相对于等离子体室偏压提取板系统的提取电压，其中多个孔被配置为从等离子体提取多个相应的带电粒子子束。 该系统还包括投影光学系统，用于将多个带电粒子子束中的至少一个引导到衬底。

    ION IMPLANT PLASMA FLOOD GUN PERFORMANCE BY USING TRACE IN SITU CLEANING GAS IN SPUTTERING GAS MIXTURE
    9.
    发明申请
    ION IMPLANT PLASMA FLOOD GUN PERFORMANCE BY USING TRACE IN SITU CLEANING GAS IN SPUTTERING GAS MIXTURE 审中-公开

    公开(公告)号：US20180337020A1

    公开(公告)日：2018-11-22

    申请号：US15778002

    申请日：2016-12-23

    Applicant: ENTEGRIS, Inc.

    Inventor： Steven E. Bishop

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/02 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/06366

    Abstract: A gas supply assembly is described for delivery of gas to a plasma flood gun. The gas supply assembly includes: a fluid supply package configured to deliver inert gas to a plasma flood gun for generating inert gas plasma including electrons for modulating surface charge of a substrate in ion implantation operation; and cleaning gas in the inert gas fluid supply package in mixture with the inert gas, or in a separate cleaning gas supply package configured to deliver cleaning gas to the plasma flood gun concurrently or sequentially with respect to delivery of inert gas to the plasma flood gun. A method of operating a plasma flood gun is also described, in which cleaning gas is introduced to the plasma flood gun, intermittently, continuously, or sequentially in relation to flow of inert gas to the plasma flood gun. The cleaning gas is effective to generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun.

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