公开(公告)号：US11862426B1

公开(公告)日：2024-01-02

申请号：US16024215

申请日：2018-06-29

Applicant: Teledyne FLIR Detection, Inc.

Inventor： James Mitchell Wells ,  Douglas K. Martins ,  Mark Gildersleeve ,  Rakesh Patel

IPC: H01J3/02

CPC classification number: H01J3/025 ,  H01J2237/063 ,  H01J2237/06366 ,  H01J2237/06375

Abstract: The present disclosure provides electron source devices, electron source assemblies, and/or methods for generating electrons. The generated electrons can be used to facilitate spectroscopy, such as mass spectrometry, including mass selection or ion mobility.

公开(公告)号：US08294115B2

公开(公告)日：2012-10-23

申请号：US12272477

申请日：2008-11-17

Applicant: Guenter Klemm ,  Volker Hacker ,  Hans-Georg Lotz

Inventor： Guenter Klemm ,  Volker Hacker ,  Hans-Georg Lotz

IPC: G21K1/08 ,  H01J3/14 ,  H01J3/26 ,  H01J49/42

CPC classification number: H01J37/077 ,  H01J3/025 ,  H01J37/3053

Abstract: A linear plasma electron source is provided. The linear plasma electron source includes a housing acting as a first electrode, the housing having side walls a slit opening in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode being arranged within the housing and having a first side facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply for providing a gas into the housing.

Abstract translation: 提供线性等离子体电子源。 线性等离子体电子源包括用作第一电极的壳体，壳体具有在壳体中用于侵入电子束的狭缝开口的侧壁，狭缝开口限定源的长度方向，第二电极布置在 壳体并且具有面向狭缝开口的第一侧，第一侧与狭缝开口间隔开第一距离，其中电子源在长度方向上的长度为第一距离的至少5倍，并且至少一个气体 用于向壳体提供气体。

公开(公告)号：US20090084972A1

公开(公告)日：2009-04-02

申请号：US12224228

申请日：2007-03-01

Applicant: Toru Tamagawa ,  Satoshi Koshimuta ,  Hideki Hamagaki

Inventor： Toru Tamagawa ,  Satoshi Koshimuta ,  Hideki Hamagaki

IPC: G01T1/18 ,  C23F1/00

CPC classification number: H01J3/025 ,  G01T1/18 ,  H01J47/02

Abstract: To attain objects to reduce the spread of electrons as compared with a conventional one without degrading the multiplication factor of electrons; to provide a large electron multiplication factor; and to improve positional resolution, there is provided a gas electron multiplier using interaction between radiation and gas through photoelectric effects including: a chamber filled with gas and a single gas electron multiplication foil arranged in the chamber wherein the gas electron multiplication foil is made of a plate-like multilayer body composed by having a plate-like insulation layer made of a macromolecular polymer material having a thickness of around 100 μm to 300 μm and flat metal layers overlaid on both surfaces of the insulation layer, and the plate-like multilayer body is provided with a through-hole structure.

Abstract translation: 为了达到减少电子传播的目的，与常规的相比不会降低电子的倍增因子; 提供大的电子倍增因子; 为了提高位置分辨率，提供了一种通过光电效应使辐射与气体之间的相互作用的气体电子倍增器，包括：充满气体的室和布置在室中的单一气体电子倍增箔，其中气体电子倍增箔由 板状多层体由具有厚度约100μm〜300μm的高分子聚合物材料制成的板状绝缘层和覆盖在绝缘层的两面的平坦的金属层构成，板状多层体 设置有通孔结构。

公开(公告)号：US07498592B2

公开(公告)日：2009-03-03

申请号：US11427273

申请日：2006-06-28

Applicant: Noah Hershkowitz ,  Benjamin Longmier ,  Scott Baalrud

Inventor： Noah Hershkowitz ,  Benjamin Longmier ,  Scott Baalrud

IPC: H01J37/077 ,  H01J61/52 ,  H01J7/24 ,  H05B31/26

CPC classification number: H01J37/077 ,  F03H1/0025 ,  H01J3/025 ,  H01J2237/31

Abstract: An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Abstract translation: 电子产生装置通过电子鞘提取从RF场产生的等离子体中的电子。 电子鞘位于负偏压导电表面一端的接地环附近，通常为圆柱体。 在稳态轴向磁场的存在下，提取的电子通过接地环。 等离子体中足够大的磁场和/或RF功率允许螺旋形血浆产生。 与电子损失面积相比，离子损失面积足够大，以允许离开等离子体的所有电子的全非双极萃取。 负偏置导电表面中的空隙允许由天线提供的时变磁场感应地耦合到导电表面内的等离子体。 导电表面用作法拉第屏蔽，其减少任何随时间变化的电场进入导电表面，即阻止天线和等离子体之间的电容耦合。

公开(公告)号：USH2212H

公开(公告)日：2008-04-01

申请号：US67226903

申请日：2003-09-26

Applicant: US NAVY

Inventor： WALTON SCOTT G ,  MEGER ROBERT ,  FERNSLER RICHARD ,  LEONHARDT DARRIN

IPC: C23F1/00 ,  C23C16/00 ,  H01J3/02 ,  H01J37/32 ,  H05H1/24

CPC classification number: H01J37/32623 ,  H01J3/025 ,  H01J37/3233 ,  H01J37/3266 ,  H05H2001/488

Abstract: An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time. A method for creating an ion-ion plasma continuous in time.

Abstract translation: 离子离子源，其特征在于包含大量卤素或卤素气体的处理室。 第二室耦合到处理室并且具有产生高能电子束的电子源。 高能电子束被注入到处理室中，在其中被高能电子束成形和限制的装置成形和限制。 当注入到处理室中时，在第二室中产生的高能电子束使卤素气体离子化，从而在处理室中产生致密的离子等离子体，其在时间上是连续的。 一种在时间上产生离子等离子体连续的方法。

公开(公告)号：US07183564B2

公开(公告)日：2007-02-27

申请号：US10915834

申请日：2004-08-11

Applicant: Christoph Schulteiss ,  Lothar-Heinz-Otto Buth

Inventor： Christoph Schulteiss ,  Lothar-Heinz-Otto Buth

IPC: H01J17/26 ,  H01J61/28 ,  H05H9/00

CPC classification number: H01J3/025 ,  H01J1/025 ,  H05H1/52

Abstract: In a channel spark source triggered by gas discharge for generating a stable focused electron beam, a gas supply for a hollow cathode thereof is provided which generates in the hollow cathode a pressure differential so that the multiplication of charge carriers in a trigger plasma of a trigger plasma source connected to the hollow cathode provides for a reliable gas discharge and the formation of a stable electron beam which exits the arrangement and which does not damage the internal passages of the arrangement.

Abstract translation: 在由用于产生稳定的聚焦电子束的气体放电触发的通道火花源中，提供了用于其空心阴极的气体供应，其在中空阴极中产生压差，使得触发器的触发等离子体中的载流子的乘法 连接到空心阴极的等离子体源提供可靠的气体放电和形成稳定的电子束，其离开该装置并且不会损坏该装置的内部通道。

公开(公告)号：US07126266B2

公开(公告)日：2006-10-24

申请号：US10891417

申请日：2004-07-14

Applicant: Sung-Jin Park ,  J. Gary Eden ,  Kyung-Ho Park

Inventor： Sung-Jin Park ,  J. Gary Eden ,  Kyung-Ho Park

IPC: H01J1/62

CPC classification number: H01J1/025 ,  B82Y10/00 ,  H01J3/025 ,  H01J17/066 ,  H01J63/02 ,  H01J2201/30469 ,  H01J2217/49

Abstract: Field emission nanostructures assist operation of a microdischarge device. The field emission nanostructures are integrated into the microdischarge device(s) or are situated near an electrode of the microdischarge device(s). The field emission nanostructures reduce operating and ignition voltages compared to otherwise identical devices lacking the field emission nanostructures, while also increasing the radiative output of the microdischarge device(s).

Abstract translation: 场发射纳米结构有助于微放电器件的工作。 场发射纳米结构集成到微放电器件中或位于微放电器件的电极附近。 与其他相同的缺少场发射纳米结构的器件相比，场致发射纳米结构降低了操作和点火电压，同时也增加了微放电器件的辐射输出。

公开(公告)号：US20050280345A1

公开(公告)日：2005-12-22

申请号：US10870992

申请日：2004-06-21

Applicant: Mikhail Strikovski

Inventor： Mikhail Strikovski

IPC: H01J3/02 ,  H01J17/26 ,  H01J61/28

CPC classification number: H01J3/025

Abstract: A surface discharge device performing functions of a trigger and electron beam generator includes a cylinder shaped member formed from a dielectric material with dielectric constant ε>100, in which a central opening is formed having a conical or cylindrical shape. An internal electrode is electrically coupled to the internal surface of the cylinder shaped member. An external electrode covers the external surface of the cylinder shaped member. A triggering pulse is applied between the external and internal electrodes to generate emission of electrons in the central opening and formation of the conducting plasma to ignite the device and serve as a source of electrons for generating an electron beam. The conducting plasma charges a capacitor formed by the cylinder shaped dielectric member and the external electrode. The cylinder shaped member is positioned in a hollow cathode having a central bore hole in the bottom. An anode is positioned remotely from the cathode and an electric field exists dynamically in space between the cathode and anode for at least a portion of the duration of the triggering pulse.

Abstract translation: 执行触发和电子束发生器的功能的表面放电装置包括由介电常数ε> 100的电介质材料形成的圆柱形构件，其中形成具有圆锥形或圆柱形形状的中心开口。 内部电极电耦合到圆筒形构件的内表面。 外部电极覆盖圆筒形构件的外表面。 在外部和内部电极之间施加触发脉冲以在中心开口中产生电子的发射并且形成导电等离子体以点燃该器件并且用作用于产生电子束的电子源。 导电等离子体对由圆柱形电介质构成的电容器和外部电极进行充电。 圆筒形构件位于底部具有中心孔的空心阴极中。 阳极远离阴极定位，并且电场在触发脉冲的持续时间的至少一部分之间动态地存在于阴极和阳极之间的空间中。

公开(公告)号：US06975073B2

公开(公告)日：2005-12-13

申请号：US10688424

申请日：2003-10-16

Applicant: George Wakalopulos

Inventor： George Wakalopulos

IPC: H01J3/02 ,  H01J7/24

CPC classification number: H01J3/025 ,  H01J3/021

Abstract: An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.

Abstract translation: 一种电子束装置，其中在由两个平行的线栅格划分的室中产生低温气体等离子体。 半导体晶片用作从等离子体吸取离子以撞击晶片的阴极，产生在目标所在的栅格的相对侧朝向阳极加速的二次电子。 为了具有均匀横截面通量特性的光束，半导体晶片被掺杂有渐变掺杂剂浓度，其促进均匀的光束。

公开(公告)号：US20040232848A1

公开(公告)日：2004-11-25

申请号：US10688424

申请日：2003-10-16

Inventor： George Wakalopulos

IPC: H01J007/24

CPC classification number: H01J3/025 ,  H01J3/021

Abstract: An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.

Abstract translation: 一种电子束装置，其中在由两个平行的线栅格划分的室中产生低温气体等离子体。 半导体晶片用作从等离子体吸取离子以撞击晶片的阴极，产生在目标所在的栅格的相对侧朝向阳极加速的二次电子。 为了具有均匀横截面通量特性的光束，半导体晶片被掺杂有渐变掺杂剂浓度，其促进均匀的光束。