Large area metallization pretreatment and surface activation system
    1.
    依法登记的发明
    Large area metallization pretreatment and surface activation system 审中-公开
    大面积金属化预处理和表面活化系统

    公开(公告)号:USH2209H

    公开(公告)日:2008-02-05

    申请号:US82580004

    申请日:2004-04-14

    Applicant: US NAVY

    CPC classification number: C23C14/022 C23C14/205

    Abstract: A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.

    Abstract translation: 使用电子束产生的等离子体的大面积金属化预处理和表面活化系统,其能够在有机塑料或聚合物材料的大面积上在低温下输送大量离子和自由基熔剂。 离子和自由基通量物理和化学改变有机塑料或聚合物材料的表面结构,从而提高膜粘附到材料上的能力。

    Method and apparatus for producing an ion-ion plasma continuous in time
    2.
    依法登记的发明
    Method and apparatus for producing an ion-ion plasma continuous in time 审中-公开
    及时生产离子等离子体等离子体的方法和装置

    公开(公告)号:USH2212H

    公开(公告)日:2008-04-01

    申请号:US67226903

    申请日:2003-09-26

    Applicant: US NAVY

    Abstract: An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time. A method for creating an ion-ion plasma continuous in time.

    Abstract translation: 离子离子源,其特征在于包含大量卤素或卤素气体的处理室。 第二室耦合到处理室并且具有产生高能电子束的电子源。 高能电子束被注入到处理室中,在其中被高能电子束成形和限制的装置成形和限制。 当注入到处理室中时,在第二室中产生的高能电子束使卤素气体离子化,从而在处理室中产生致密的离子等离子体,其在时间上是连续的。 一种在时间上产生离子等离子体连续的方法。

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