公开(公告)号：US06724584B2

公开(公告)日：2004-04-20

申请号：US10152192

申请日：2002-05-20

Applicant: Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

Inventor： Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3113 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034

Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.

Abstract translation: 制造根据本发明的自旋阀传感器的方法包括从反铁磁材料形成钉扎层并在钉扎层附近形成合成的反铁磁体。 形成自由铁磁层，并且在自由铁磁层的外部附近形成交换突片以偏置自由层。 交换翼片由与第一钉扎层相同的反铁磁材料形成。 然后，在存在单个磁场的单次退火期间，设定合成反铁磁体的磁矩，并且自由铁磁层的磁矩被偏置。

公开(公告)号：US20040040628A1

公开(公告)日：2004-03-04

申请号：US10229136

申请日：2002-08-28

Inventor： Mark E. Tuttle ,  Ronald A. Weimer

IPC: H01F041/22

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/0009 ,  H01F41/304

Abstract: A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Nnullel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.

Abstract translation: 用于磁性退火在晶片上形成的磁阻元件的装置包括加热的卡盘和用于将晶片单独地单独地放置在卡盘上的输送机构。 线圈与卡盘相邻，并且在将晶片加热到反铁磁层的Néel温度之后产生磁场。 控制系统调节加热卡盘的温度，磁场的强度以及加热每个卡盘以控制退火过程的时间段。 退火元件被结合在磁存储器件的制造中。

公开(公告)号：US06607641B2

公开(公告)日：2003-08-19

申请号：US09833459

申请日：2001-04-11

Applicant: Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

Inventor： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

IPC: C23C1434

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3954 ,  H01F10/123 ,  H01F10/3218 ,  H01F41/304

Abstract: An exchange coupling film includes a first antiferromagnetic layer formed on a pinned magnetic layer, and a second antiferromagnetic layer formed thereon. A composition ratio of an element X in the first antiferromagnetic layer is larger than that of the second antiferromagnetic layer. Preferably, a non-aligned state is created at an interface between the first antiferromagnetic layer and the pinned magnetic layer, whereby a large exchange coupling magnetic field is obtained upon heat-treatment.

Abstract translation: 交换耦合膜包括形成在钉扎磁性层上的第一反铁磁层和形成在其上的第二反铁磁层。 第一反铁磁性层中的元素X的组成比大于第二反铁磁层的组成比。 优选地，在第一反铁磁性层和被钉扎的磁性层之间的界面处产生非对准状态，由此在热处理时获得大的交换耦合磁场。

公开(公告)号：US06597542B2

公开(公告)日：2003-07-22

申请号：US10346932

申请日：2003-01-17

Applicant: Masamichi Saito ,  Naoya Hasegawa

Inventor： Masamichi Saito ,  Naoya Hasegawa

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3951 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49055 ,  Y10T29/49067

Abstract: A dual spin-valve magnetoresistive thin film elements includes a composite free magnetic layer having first and second free magnetic layers, first and second nonmagnetic electrically conductive layers residing below and above the composite free magnetic layer, respectively, first and second dual pinned magnetic layers each having first and second pinned magnetic layers, and first and second antiferromagnetic layers. In the first dual pinned magnetic layer, the first pinned magnetic layer of contacts the first antiferromagnetic layer and the second pinned magnetic layer contacts the first nonmagnetic electrically conductive layer. In the second dual pinned magnetic layer, the first pinned magnetic layer of contacts the second antiferromagnetic layer and the second pinned magnetic layer contacts the second nonmagnetic electrically conductive layer, and the magnetic moment of the first pinned magnetic layer is smaller than the second pinned magnetic layer. The magnetization of the first and second free magnetic layers face in opposite directions.

Abstract translation: 双自旋阀磁阻薄膜元件包括具有第一和第二自由磁性层的复合自由磁性层，分别位于复合自由磁性层下方和上方的第一和第二非磁性导电层，第一和第二双重固定磁性层各自 具有第一和第二固定磁性层，以及第一和第二反铁磁层。 在第一双引脚磁性层中，与第一反铁磁层接触的第一固定磁性层和第二固定磁性层接触第一非磁性导电层。 在第二双引脚磁性层中，与第二反铁磁性层接触的第一被钉扎磁性层与第二非磁性导电层接触，第一固定磁性层的磁矩小于第二固定磁性层 层。 第一和第二自由磁性层的磁化面向相反方向。

公开(公告)号：US20030111335A1

公开(公告)日：2003-06-19

申请号：US10271077

申请日：2002-10-15

Applicant: Alps Electric Co., Ltd.

Inventor： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

IPC: C23C014/32

CPC classification number: C23C14/5806 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/025 ,  C23C14/165 ,  C23C14/3492 ,  C23C28/021 ,  C23C28/023 ,  C23C28/028 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/302 ,  H01F41/304 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

公开(公告)号：US20010047930A1

公开(公告)日：2001-12-06

申请号：US09833459

申请日：2001-04-11

Applicant: Alps Electric Co., Ltd.

Inventor： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

IPC: C23C014/00 ,  G11B005/127 ,  G11B005/33 ,  B05D003/02

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3954 ,  H01F10/123 ,  H01F10/3218 ,  H01F41/304

Abstract: An exchange coupling film includes a first antiferromagnetic layer formed on a pinned magnetic layer, and a second antiferromagnetic layer formed thereon. A composition ratio of an element X in the first antiferromagnetic layer is larger than that of the second antiferromagnetic layer. Preferably, a non-aligned state is created at an interface between the first antiferromagnetic layer and the pinned magnetic layer, whereby a large exchange coupling magnetic field is obtained upon heat-treatment.

Abstract translation: 交换耦合膜包括形成在钉扎磁性层上的第一反铁磁层和形成在其上的第二反铁磁层。 第一反铁磁性层中的元素X的组成比大于第二反铁磁层的组成比。 优选地，在第一反铁磁性层和被钉扎的磁性层之间的界面处产生非对准状态，由此在热处理时获得大的交换耦合磁场。

公开(公告)号：US20170178788A1

公开(公告)日：2017-06-22

申请号：US14978353

申请日：2015-12-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Hariklia Deligianni ,  William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC: H01F27/28 ,  H01F1/147 ,  H01F41/04 ,  H01F27/24

CPC classification number: H01L28/10 ,  C23C14/14 ,  H01F1/147 ,  H01F1/14708 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  H01F17/0006 ,  H01F27/24 ,  H01F27/2804 ,  H01F41/042 ,  H01F41/304 ,  H01F2017/0066 ,  H01F2027/2809 ,  H01L21/0273 ,  H01L21/32051 ,  H01L21/32139

Abstract: Disclosed are magnetic structures, including on-chip inductors comprising laminated layers comprising, in order, a barrier and/or adhesion layer, a antiferromagnetic layer, a magnetic growth layer, a soft magnetic layer, an insulating non-magnetic spacer, a soft magnetic layer, a magnetic growth later, an antiferromagnetic layer. Also disclosed are methods of making such structures.

公开(公告)号：US09103729B1

公开(公告)日：2015-08-11

申请号：US13249893

申请日：2011-09-30

Applicant: Ganping Ju ,  Jason L. Pressesky ,  Roy William Chantrell ,  Xiaowei Wu ,  Xi Chen ,  Xiaobin Zhu ,  Yingguo Peng

Inventor： Ganping Ju ,  Jason L. Pressesky ,  Roy William Chantrell ,  Xiaowei Wu ,  Xi Chen ,  Xiaobin Zhu ,  Yingguo Peng

IPC: G01R33/00 ,  G11B11/00 ,  G11B5/66 ,  G01K1/00 ,  G01K7/00 ,  H01L37/04 ,  G11B11/105 ,  G03G5/16 ,  H01F41/30 ,  H01L37/00 ,  G06F17/18

CPC classification number: G01N27/80 ,  G01K7/00 ,  G03G5/16 ,  G06F17/18 ,  G11B11/10591 ,  G11B2005/0021 ,  H01F41/304 ,  H01L37/00 ,  H01L37/04

Abstract: Determining a Curie temperature (Tc) distribution of a sample comprising magnetic material involves subjecting the sample to an electromagnetic field, heating the sample over a range of temperatures, generating a signal representative of a parameter of the sample that changes as a function of changing sample temperature while the sample is subjected to the electromagnetic field, and determining the Tc distribution of the sample using the generated signal and a multiplicity of predetermined parameters of the sample.

Abstract translation: 确定包含磁性材料的样品的居里温度（Tc）分布包括对样品进行电磁场，在一个温度范围内加热样品，产生代表随变化样品变化的样品参数的信号 温度，同时样品经受电磁场，并使用生成的信号和样本的多个预定参数确定样品的Tc分布。

公开(公告)号：US08331064B2

公开(公告)日：2012-12-11

申请号：US12106190

申请日：2008-04-18

Applicant: Icko E. Tim Iben

Inventor： Icko E. Tim Iben

IPC: G11B5/33

CPC classification number: G11B5/84 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3106 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3967 ,  G11B5/40 ,  H01F10/3254 ,  H01F41/302 ,  H01F41/304 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043

Abstract: A method in one embodiment includes applying a current to a lead of a tunneling magnetoresistance sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintaining the current at the level for an amount of time sufficient to anneal the tunneling magnetoresistive (TMR) sensor. A system in one embodiment comprises a first lead coupled to one end of a tunneling magnetoresistance sensor stack; a second lead coupled to another end of the sensor stack; and a third lead coupled to the first lead, the third lead being selectively coupleable to a ground, wherein a current applied to the first lead at a predetermined level when the third lead is coupled to the ground induces joule heating of the first lead or a heating layer coupled to the first and third leads, the joule heating applied for a predetermined amount of time being sufficient to anneal a magnetic layer of the sensor. Additional systems and methods are also presented.

Abstract translation: 在一个实施例中的方法包括将电流施加到隧道磁阻传感器的引线，用于引起铅或加热层的焦耳加热，焦耳加热的水平足以退火传感器的磁性层; 并将电流保持在该电平上足以使隧道磁阻（TMR）传感器退火的时间。 一个实施例中的系统包括耦合到隧道磁阻传感器堆叠的一端的第一引线; 耦合到传感器堆叠的另一端的第二引线; 以及耦合到所述第一引线的第三引线，所述第三引线选择性地耦合到地，其中当所述第三引线耦合到所述地时，以预定水平施加到所述第一引线的电流引起所述第一引线的焦耳加热或 加热层耦合到第一和第三引线，焦耳加热施加预定的时间量足以使传感器的磁性层退火。 还介绍了其他系统和方法。

公开(公告)号：US08237437B2

公开(公告)日：2012-08-07

申请号：US13023260

申请日：2011-02-08

Applicant: Bradley N Engel ,  Phillip G. Mather ,  Jon M. Slaughter

Inventor： Bradley N Engel ,  Phillip G. Mather ,  Jon M. Slaughter

IPC: G01R33/09 ,  G01R33/02

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3272 ,  H01F41/304 ,  H01F41/308 ,  H01L27/22

Abstract: A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.

Abstract translation: 制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层 被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对齐的饱和场（90）处理参考层，然后去除饱和场时，高纵横比图案提供 使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。 在加热和冷却时，铁磁膜被固定在不同的期望方向上。