公开(公告)号：US08208231B2

公开(公告)日：2012-06-26

申请号：US12617199

申请日：2009-11-12

Applicant: Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

Inventor： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1114

Abstract: A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg—O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co—Fe—B, Co—B, Fe—B, and Co—Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer.

Abstract translation: 隧道磁传感元件包括层叠体，其中具有磁化方向钉扎的钉扎磁性层，绝缘阻挡层和具有可变形外部磁场的磁化方向的自由磁性层从下面依次层叠。 绝缘阻挡层由Mg-O制成。 自由磁性层具有软磁性层和设置在软磁性层与绝缘阻挡层之间的增强层，其自旋极化比高于软磁性层。 将由Co-Fe-B，Co-B，Fe-B和Co-Fe中的一种制成的插入磁性层沿与构成层叠体的各层的界面平行的方向插入到软磁性层中， 软磁性层通过插入磁性层在厚度方向上被分成多层。

公开(公告)号：US08054588B2

公开(公告)日：2011-11-08

申请号：US13025842

申请日：2011-02-11

Applicant: Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

Inventor： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

IPC: G11B5/33

CPC classification number: B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909

Abstract: A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

Abstract translation: 隧道磁阻元件包括包括钉扎磁性层，绝缘阻挡层和自由磁性层的层压体。 绝缘阻挡层由Ti-Mg-O或Ti-O组成。 自由磁性层包括增强子层，第一软磁子层，非磁性金属子层和第二软磁性子层。 例如，增强子层由Co-Fe构成，第一软磁性子层和第二软磁性子层由Ni-Fe构成，非磁性金属子层由Ta构成。 增强子层的平均厚度的总厚度和第一软磁性子层的平均厚度在25至80埃的范围内。 因此，隧道磁阻元件可以一直具有比以前更高的电阻变化率。

公开(公告)号：US08045300B2

公开(公告)日：2011-10-25

申请号：US12036513

申请日：2008-02-25

Applicant: Kazumasa Nishimura ,  Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Ryo Nakabayashi ,  Hidekazu Kobayashi

Inventor： Kazumasa Nishimura ,  Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Ryo Nakabayashi ,  Hidekazu Kobayashi

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302

Abstract: A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (ΔR/R) compared with the related art.

Abstract translation: 自由磁性层具有层叠结构，其中由Co-Fe或Fe组成的第一磁性子层和由Co-Fe-B或Fe-B组成的第二磁性子层依次形成在绝缘阻挡层上 的Mg-O。 与现有技术相比，这有效地提高了电阻变化率（＆Dgr; R / R）。

公开(公告)号：US08023233B2

公开(公告)日：2011-09-20

申请号：US11945468

申请日：2007-11-27

Applicant: Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

Inventor： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC: G11B5/39

CPC classification number: H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/40 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/31678

Abstract: A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.

Abstract translation: 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由配置在自由磁性层上的铱 - 锰（IrMn）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，电阻变化率高，自由磁层的磁致伸缩性低。

公开(公告)号：US07881024B2

公开(公告)日：2011-02-01

申请号：US11622918

申请日：2007-01-12

Applicant: Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

Inventor： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/10

Abstract: A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.

Abstract translation: 提供隧道式磁检测元件。 隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。 第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。 由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。 绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。

公开(公告)号：US07787221B2

公开(公告)日：2010-08-31

申请号：US11671756

申请日：2007-02-06

Applicant: Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Naoya Hasegawa

Inventor： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Naoya Hasegawa

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/08

Abstract: A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 Å and 6 Å or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (ΔR/R) substantially identical to those of the known structure are maintained.

Abstract translation: 第一固定磁性子层4a具有多层结构，其包括设置在下铁磁共晶层与上部铁磁层之间的第一插入层。 第一个插入次层具有超过3埃和6埃或更小的平均厚度。 这导致层间耦合磁场Hin低于已知技术，而RA和电阻变化率（＆Dgr; R / R）与已知结构基本相同。

公开(公告)号：US07599155B2

公开(公告)日：2009-10-06

申请号：US10823474

申请日：2004-04-13

Applicant: Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

Inventor： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC: G11B5/39

CPC classification number: G11B5/3903 ,  G11B5/3163 ,  G11B5/398

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

Abstract translation: CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

公开(公告)号：US07558029B2

公开(公告)日：2009-07-07

申请号：US11364533

申请日：2006-02-27

Applicant: Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

Inventor： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC: G11B5/127

CPC classification number: G11B5/3932 ,  B82Y25/00 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10

Abstract: There is provided a magnetic detecting element having a large ΔRA. A free magnetic layer has a three layer structure in which a CoFe layer, an NiaFeb alloy layer (where a and b are represented by at %, 0≦a≦25, and a+b=100), and a CoFe layer are laminated from the bottom. If the at % of Ni in an NiFe alloy that exists in the free magnetic layer is in this range, a spin-dependent bulk scattering coefficient β increases, and the product ΔRA of the resistance variation of the magnetic detecting element and the area of the element can be made increased.

Abstract translation: 提供了具有大DeltaRA的磁检测元件。 自由磁性层具有三层结构，其中CoFe层，NiaFeb合金层（其中a和b由以％表示，0 <= a <= 25，a + b = 100）和CoFe层 从底部层压。 如果存在于自由磁性层中的NiFe合金中的Ni的at％在该范围内，则自旋相关体散射系数β增加，并且磁检测元件的电阻变化的乘积DeltaRA与 元素可以增加。

公开(公告)号：US20080278863A1

公开(公告)日：2008-11-13

申请号：US12118354

申请日：2008-05-09

Applicant: Kazumasa Nishimura ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

Inventor： Kazumasa Nishimura ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3967 ,  H01L43/08 ,  H01L43/12

Abstract: A tunneling magnetic sensing element includes: a pinned magnetic layer whose direction of magnetization is pinned in one direction; an insulating barrier layer; and a free magnetic layer whose direction of magnetization changes in response to an external magnetic field. The pinned magnetic layer, the insulating barrier layer and the free magnetic layer are deposited in the named order. A first protective layer composed of a platinum-group element is disposed on the free magnetic layer, and a second protective layer composed of Ti is disposed on the first protective layer.

Abstract translation: 隧道磁传感元件包括：一个钉扎磁性层，其磁化方向被固定在一个方向上; 绝缘阻挡层; 以及其磁化方向响应于外部磁场而变化的自由磁性层。 钉扎磁性层，绝缘阻挡层和自由磁性层以指定的顺序沉积。 在自由磁性层上设置由铂族元素构成的第一保护层，在第一保护层上设置由Ti构成的第二保护层。

公开(公告)号：US20080253038A1

公开(公告)日：2008-10-16

申请号：US11888762

申请日：2007-08-02

Applicant: Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa

Inventor： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12

Abstract: A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.

Abstract translation: 隧道磁传感器包括磁化被固定在一个方向上的钉扎磁性层，绝缘阻挡层和磁化强度由外部磁场变化的自由磁性层，这些层按照从 底部。 由镁（Mg）制成的第一保护层设置在自由磁性层上。 与不包括第一保护层或包括由Al，Ti，Cu或Ir-Mn合金制成的第一保护层的常规磁传感器相比，隧道磁传感器具有较大的磁阻变化。 与常规磁传感器中包括的自由磁性层相比，自由磁层具有较低的磁致伸缩性。