Invention Grant
- Patent Title: Tunneling magnetic sensing element and method for producing same
- Patent Title (中): 隧道磁传感元件及其制造方法
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Application No.: US12036513Application Date: 2008-02-25
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Publication No.: US08045300B2Publication Date: 2011-10-25
- Inventor: Kazumasa Nishimura , Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Yoshihiro Nishiyama , Ryo Nakabayashi , Hidekazu Kobayashi
- Applicant: Kazumasa Nishimura , Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Yoshihiro Nishiyama , Ryo Nakabayashi , Hidekazu Kobayashi
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2007-065614 20070314
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (ΔR/R) compared with the related art.
Public/Granted literature
- US20080225443A1 TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR PRODUCING SAME Public/Granted day:2008-09-18
Information query
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