公开(公告)号：US20180209066A1

公开(公告)日：2018-07-26

申请号：US15745957

申请日：2016-07-21

申请人： Panasonic Corporation

发明人： Ryosuke KIKUCHI ,  Kazuhito HATO ,  Tetsuya HASEGAWA ,  Yasushi HIROSE

IPC分类号： C30B29/38 ,  C01B21/082 ,  C30B25/10 ,  H01L21/02 ,  H01L31/032 ,  H01L31/036 ,  H01L31/18

CPC分类号： C30B29/38 ,  C01B21/0821 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2002/84 ,  C01P2006/40 ,  C23C14/0021 ,  C23C14/024 ,  C23C14/0676 ,  C23C14/28 ,  C30B25/06 ,  C30B25/105 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L31/032 ,  H01L31/036 ,  H01L31/18

摘要： The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for example, a rutile-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having a rutile-type crystal structure and being represented by the chemical formula NbON.

公开(公告)号：US09905341B2

公开(公告)日：2018-02-27

申请号：US14380997

申请日：2013-02-26

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Toshiaki Fujita ,  Hiroshi Tanaka ,  Hitoshi Inaba ,  Kazutaka Fujiwara ,  Noriaki Nagatomo

IPC分类号： G01K7/00 ,  H01C7/00 ,  H01C7/04 ,  C30B25/06 ,  C30B29/38 ,  G01K7/22 ,  H01C17/12 ,  H01C7/02

CPC分类号： H01C7/008 ,  C30B25/06 ,  C30B29/38 ,  G01K7/22 ,  H01C7/023 ,  H01C7/04 ,  H01C7/043 ,  H01C17/12

摘要： Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70≦y/(x+y)≦0.95, 0.4≦z≦0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

公开(公告)号：US09897705B2

公开(公告)日：2018-02-20

申请号：US14989242

申请日：2016-01-06

申请人： Toshiba Electron Tubes & Devices Co., Ltd.

发明人： Hiroshi Horiuchi ,  Hiroshi Aida ,  Atsuya Yoshida

IPC分类号： G01T1/202 ,  C09K11/62 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B29/10 ,  G01T1/20 ,  G21K4/00

CPC分类号： G01T1/2023 ,  C09K11/628 ,  C23C14/0694 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/00 ,  C30B25/02 ,  C30B25/06 ,  C30B29/10 ,  C30B29/12 ,  C30B29/605 ,  G01T1/2018 ,  G01T1/202 ,  G21K2004/12

摘要： According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within ±15%.

公开(公告)号：US09890472B2

公开(公告)日：2018-02-13

申请号：US14362130

申请日：2012-04-06

申请人： Shumin Wang

发明人： Shumin Wang

IPC分类号： C30B19/12 ,  H01L21/02 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  C30B25/06 ,  C30B29/68

CPC分类号： C30B19/12 ,  C30B23/025 ,  C30B25/06 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02667 ,  Y10T428/12681 ,  Y10T428/2495 ,  Y10T428/31678

摘要： The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template layer is fully relaxed. Compared to the prior art, the invention has advantages of simple preparation, achieving in various lattice constant material combinations on one substrate and low dislocation density, high crystal quality.

公开(公告)号：US20180040475A1

公开(公告)日：2018-02-08

申请号：US15665698

申请日：2017-08-01

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takahiro MIYAKURA ,  Atsushi MORIYA ,  Naoharu NAKAISO ,  Kensuke HAGA

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/455

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/52 ,  C23C16/56 ,  C30B25/005 ,  C30B25/02 ,  C30B25/06 ,  H01L21/02126 ,  H01L21/02233 ,  H01L21/02636 ,  H01L21/32055 ,  H01L29/66636

摘要： There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.

公开(公告)号：US20160116607A1

公开(公告)日：2016-04-28

申请号：US14989242

申请日：2016-01-06

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electron Tubes & Devices Co., Ltd.

发明人： Hiroshi Horiuchi ,  Hiroshi Aida ,  Atsuya Yoshida

IPC分类号： G01T1/202 ,  C30B25/02 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B29/10 ,  G01T1/20 ,  C30B25/06

CPC分类号： G01T1/2023 ,  C09K11/628 ,  C23C14/0694 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/00 ,  C30B25/02 ,  C30B25/06 ,  C30B29/10 ,  C30B29/12 ,  C30B29/605 ,  G01T1/2018 ,  G01T1/202 ,  G21K2004/12

摘要： According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within ±15%.

摘要翻译： 根据实施例，辐射检测器包括将光转换为电信号的光电转换基板和与光电转换基板接触并将外部入射的辐射转换成光的闪烁体层。 闪烁体层由含有作为卤化物的CsI中的Tl作为活化剂的荧光体制成。 荧光体中的活化剂的浓度为1.6质量％±0.4质量％，活化剂在面内方向和膜厚度方向上的浓度分布为±15％以内。

公开(公告)号：US09217207B2

公开(公告)日：2015-12-22

申请号：US13953315

申请日：2013-07-29

申请人： National Chiao Tung University

发明人： Li Chang ,  Yu-Chang Chen ,  Jr-Yu Chen

IPC分类号： C30B29/04 ,  C30B25/18 ,  C30B25/06 ,  C30B25/10

CPC分类号： C30B25/183 ,  C30B25/06 ,  C30B25/10 ,  C30B25/105 ,  C30B25/186 ,  C30B29/04

摘要： The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.

摘要翻译： 本发明涉及一种生长薄膜金刚石的方法。 由于在横向外延生长期间在异质衬底的内部晶粒之间形成微槽，所以允许将金刚石晶粒嵌入微槽中; 也可以防止由划痕法或播种法造成的表面损伤。 结果，可以获得具有均匀厚度和高质量的连续金刚石薄膜。

公开(公告)号：US20150049788A1

公开(公告)日：2015-02-19

申请号：US14455541

申请日：2014-08-08

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Toshiaki Fujita ,  Hiroshi Tanaka ,  Noriaki Nagatomo

IPC分类号： G01K7/22 ,  C30B29/38 ,  C30B25/06

CPC分类号： G01K7/22 ,  C23C14/0676 ,  C30B25/06 ,  C30B29/38 ,  C30B29/605 ,  H01C7/008 ,  H01C7/04

摘要： Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor.The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly (N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0

摘要翻译： 提供了一种用于热敏电阻的金属氮化物材料，其具有高可靠性和高耐热性，并且可以直接在不烧制的膜等上沉积，其制造方法和膜型热敏电阻传感器。 用于热敏电阻的金属氮化物材料由以下通式表示的金属氮化物组成：（M1-vAv）xAly（N1-wOw）z（其中“M”表示Ti，V，Cr，Mn，Fe， 和Co，“A”表示Sc，Zr，Mo，Nb和W中的至少一个，0.0

公开(公告)号：US20130240876A1

公开(公告)日：2013-09-19

申请号：US13798882

申请日：2013-03-13

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Li CHANG ,  Yen-Teng HO

IPC分类号： C30B23/02 ,  C30B25/06 ,  C30B23/08 ,  C30B25/18 ,  H01L29/04 ,  C30B23/06

CPC分类号： C30B23/025 ,  C30B23/066 ,  C30B23/08 ,  C30B25/06 ,  C30B25/18 ,  C30B25/186 ,  C30B29/16 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/24

摘要： The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.

摘要翻译： 本发明涉及一种生长纤锌矿结构的新型非极性（1340）面外延层的方法，其包括以下步骤：提供具有钙钛矿结构的单晶氧化物; 使用单晶氧化物的平面作为基板; 并通过气相沉积法在单晶氧化物的平面上形成纤锌矿半导体的非极性（1340）面外延层。 本发明还提供根据上述方法获得的具有非极性（1340）面的外延层。

公开(公告)号：US20120288673A1

公开(公告)日：2012-11-15

申请号：US13442658

申请日：2012-04-09

申请人： Bruce M. Clemens ,  James R. Groves ,  Garrett J. Hayes ,  Bingrui Joel Li ,  Alberto Salleo

发明人： Bruce M. Clemens ,  James R. Groves ,  Garrett J. Hayes ,  Bingrui Joel Li ,  Alberto Salleo

IPC分类号： B32B3/00

CPC分类号： C23C14/0694 ,  B32B7/02 ,  B32B2307/704 ,  B32B2457/00 ,  C23C14/221 ,  C30B25/06 ,  Y10T428/24355

摘要： A biaxially textured crystalline layer formed on a substrate is provided. The biaxially textured crystalline layer includes an oriented CaF2 crystalline layer having crystalline grains oriented in both in-plane and out-of-plane directions, where the out-of-plane orientation is a (111) out-of-plane orientation. The oriented CaF2 crystalline layer is disposed for growth of a subsequent epitaxial layer and the CaF2 crystalline layer comprises an IBAD CaF2 layer. The biaxially textured CaF2 layer can be used in a photovoltaic cell, an electronic or optoelectronic device, an integrated circuit, an optical sensor, or a magnetic device.

摘要翻译： 提供了形成在基板上的双轴纹理结晶层。 双轴纹理结晶层包括取向的CaF 2晶体层，其具有在面内和面外方向上取向的晶粒，其中面外取向为（111）面外取向。 配置取向CaF 2晶体层用于后续外延层的生长，并且CaF 2晶体层包含IBAD CaF 2层。 双轴织构化的CaF 2层可用于光伏电池，电子或光电器件，集成电路，光学传感器或磁性器件中。