公开(公告)号：US08449672B2

公开(公告)日：2013-05-28

申请号：US12149051

申请日：2008-04-25

申请人： Boris N. Feigelson ,  Richard L. Henry

发明人： Boris N. Feigelson ,  Richard L. Henry

IPC分类号： C03B11/04

CPC分类号： C30B9/12 ,  C30B19/02 ,  C30B29/406

摘要： This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (Li3N) combined with barium fluoride (BaF2), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.

摘要翻译： 本公开涉及在III族氮化物的相图的区域中在低压和温度下制造单晶III族氮化物，特别是氮化镓的方法，其中III族氮化物是热力学稳定的，包括反应容器中的电荷 （a）作为源的III族氮化物材料，（b）介于所述III族氮化物源和沉积位置之间的溶剂阻挡层，所述溶剂由与氟化钡（BaF 2）组合的氮化锂（Li 3 N）制备， 或与氮化钡和氟化锂（LiF）组合物的氮化锂，加热溶剂使其熔融，将GaN材料源溶解在熔融溶剂中，并且随着GaN单结晶的沉淀，自身接种或种子，保持 条件然后沉淀出来。

公开(公告)号：US20130071316A1

公开(公告)日：2013-03-21

申请号：US13698921

申请日：2011-05-30

申请人： Kenichi Shiroki ,  Takashi Fukuhara ,  Kenji Narita

发明人： Kenichi Shiroki ,  Takashi Fukuhara ,  Kenji Narita

IPC分类号： C01G49/02

CPC分类号： C01G49/02 ,  C01G49/0018 ,  C01G49/0054 ,  C01P2002/52 ,  C01P2002/54 ,  C30B19/02 ,  C30B29/28 ,  G02F1/09 ,  H01F10/24

摘要： Provided is a Bi-substituted rare earth iron garnet single crystal which has a composition of R3-xBixFe5-wAwO12, wherein R denotes one or more rare earth elements among Y, Eu, Gd, Ho, Yb, Lu, Nd, Tm, La, Sm, Dy, Er, Ce, and Pr while definitely including Gd, A denotes one or more elements among Ga, Al, In, Sc, Co, Ni, Cr, V, Ti, Si, Ge, Mg, Zn, Nb, Ta, Sn, Zr, Hf, Pt, Rh, Te, Os, Ce, and Lu, 0.7

摘要翻译： 提供具有R3-xBixFe5-wAwO12组成的双取代稀土铁石榴石单晶，其中R表示Y，Eu，Gd，Ho，Yb，Lu，Nd，Tm，La中的一种或多种稀土元素 ，Sm，Dy，Er，Ce和Pr，而绝对包含Gd，A表示Ga，Al，In，Sc，Co，Ni，Cr，V，Ti，Si，Ge，Mg，Zn，Nb中的一种或多种元素 ，Ta，Sn，Zr，Hf，Pt，Rh，Te，Os，Ce和Lu，0.7

公开(公告)号：US08388752B2

公开(公告)日：2013-03-05

申请号：US13036101

申请日：2011-02-28

申请人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Akihiro Yauchi ,  Shinji Shimosaki

发明人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Akihiro Yauchi ,  Shinji Shimosaki

IPC分类号： C30B9/00

CPC分类号： C30B19/04 ,  C30B9/10 ,  C30B19/02 ,  C30B19/10 ,  C30B29/36

摘要： A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50

摘要翻译： 一种能够稳定地制造低载体密度至多为5×1017 / cm3，优选小于1×1017 / cm3的薄膜或本体晶体形式的SiC单晶的方法，其适用于 使用其中溶剂是Si合金的熔体的SiC溶液的液相生长的各种装置采用具有由SixCryTiz表示的组成的Si合金，其中x，y和z（以原子百分比计）满足0.50

公开(公告)号：US20120070962A1

公开(公告)日：2012-03-22

申请号：US13006429

申请日：2011-01-14

申请人： Shinsuke Fujiwara ,  Seiji Nakahata

发明人： Shinsuke Fujiwara ,  Seiji Nakahata

IPC分类号： H01L21/30 ,  B24B1/00 ,  C30B25/02 ,  C30B19/02 ,  C30B19/12

CPC分类号： C30B29/403 ,  C30B9/12 ,  C30B19/02 ,  C30B25/20

摘要： Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×105 cm−2 and that are fracture resistant, and a method of manufacturing semiconductor devices utilizing such freestanding III-nitride single-crystal substrates are made available. The freestanding III-nitride single-crystal substrate includes one or more high-dislocation-density regions (20h), and a plurality of low-dislocation-density regions (20k) in which the dislocation density is lower than that of the high-dislocation-density regions (20h), wherein the average dislocation density is not greater than 5×105 cm−2. Herein, the ratio of the dislocation density of the high-dislocation-density region(s) (20h) to the average dislocation density is sufficiently large to check the propagation of cracks in the substrate. And the semiconductor device manufacturing method utilizes the freestanding III-nitride single crystal substrate (20p).

摘要翻译： 可以获得平均位错密度不大于5×105cm-2并且是耐断裂性的独立的III族氮化物单晶衬底，以及利用这种独立式III族氮化物单晶衬底制造半导体器件的方法。 独立的III族氮化物单晶衬底包括一个或多个高位错密度区域（20h）和位错密度低于高位错密度区域（20k）的多个低位错密度区域（20k） 密度区域（20h），其中平均位错密度不大于5×105cm-2。 这里，高位错密度区域（20h）的位错密度与平均位错密度的比例足够大，以检查基板中的裂纹的传播。 并且半导体器件制造方法利用独立的III族氮化物单晶衬底（20p）。

公开(公告)号：US20120017825A1

公开(公告)日：2012-01-26

申请号：US11558048

申请日：2006-11-09

申请人： Mark Philip D'Evelyn ,  Kristi Jean Narang ,  Dong-Sil Park ,  Huicong Hong ,  Xian-An Cao ,  Larry Qiang Zeng

发明人： Mark Philip D'Evelyn ,  Kristi Jean Narang ,  Dong-Sil Park ,  Huicong Hong ,  Xian-An Cao ,  Larry Qiang Zeng

IPC分类号： C30B19/08 ,  C30B7/10 ,  H01L21/02 ,  C30B25/04 ,  B29C35/02 ,  C30B19/00 ,  C30B25/02

CPC分类号： C30B7/005 ,  C30B7/105 ,  C30B9/08 ,  C30B19/02 ,  C30B19/12 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406 ,  C30B29/68

摘要： A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

摘要翻译： 生长结晶组合物的方法，第一结晶组合物可包括镓和氮。 结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。 在一个实施方案中，组合物a y具有以小于约3×1018 /立方厘米的浓度存在的氧量，并且在确定的第一结晶组合物体积中可以没有二维平面边界缺陷。

公开(公告)号：US08084281B2

公开(公告)日：2011-12-27

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/00

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US20110155046A1

公开(公告)日：2011-06-30

申请号：US12926995

申请日：2010-12-22

申请人： Shiro Yamazaki

发明人： Shiro Yamazaki

IPC分类号： C30B19/10 ,  C30B19/04

CPC分类号： C30B29/403 ,  C30B9/06 ,  C30B9/10 ,  C30B19/02 ,  C30B19/04 ,  C30B29/406

摘要： In the Na flux method, a target semiconductor layer is separated from a sapphire substrate of a template substrate. The template substrate formed of the sapphire substrate and a GaN layer is placed in a Ga—Na molten mixture. The temperature the molten mixture and the nitrogen pressure are adjusted to 850° C. and 2.5 MPa, respectively. Under the conditions, a part of the GaN layer is melted back until the surface of the sapphire substrate is exposed, so that the remaining portion of the GaN layer is left in the form of a plurality of upright columns. Then, the pressure is elevated to 3 MPa, whereby a target GaN layer is grown on the processed GaN layer. Through lowering temperature, stress due to the difference in linear expansion coefficient and lattice constant between sapphire and GaN is generated, to thereby generate cracks in the processed GaN layer. By virtue of the cracking, the target GaN layer is separated from the sapphire substrate.

摘要翻译： 在Na通量法中，将目标半导体层与模板基板的蓝宝石基板分离。 由蓝宝石衬底和GaN层形成的模板衬底放置在Ga-Na熔融混合物中。 熔融混合物的温度和氮气压力分别调节到850℃和2.5MPa。 在这种条件下，GaN层的一部分被熔化，直到蓝宝石衬底的表面露出，使得GaN层的剩余部分呈多个立柱的形式。 然后，将压力升高至3MPa，由此在经处理的GaN层上生长目标GaN层。 通过降低温度，产生由于蓝宝石和GaN之间的线膨胀系数和晶格常数的差异引起的应力，从而在经处理的GaN层中产生裂纹。 由于破裂，目标GaN层与蓝宝石衬底分离。

公开(公告)号：US20110024742A1

公开(公告)日：2011-02-03

申请号：US12934835

申请日：2009-03-18

申请人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto ,  Naoki Ohashi ,  Isao Sakaguchi ,  Yoshiki Wada

发明人： Hideyuki Sekiwa ,  Jun Kobayashi ,  Miyuki Miyamoto ,  Naoki Ohashi ,  Isao Sakaguchi ,  Yoshiki Wada

IPC分类号： H01L29/22 ,  C30B15/00 ,  C30B15/04

CPC分类号： H01L21/02625 ,  C30B9/08 ,  C30B19/02 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02628

摘要： A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of −c plane, of the single crystal grown by the liquid phase epitaxial growth method.

摘要翻译： 可以使用液相外延生长法在ZnO晶体基板上生长ZnO单晶，通过将ZnO作为溶质和溶剂进行混合和熔融，使晶体基板与所得熔体直接接触，并拉出晶种基板 连续或间歇地 可以如下获得自支撑Mg的ZnO混合单晶晶片。 使用液相外延生长法，通过混合并熔化形成溶质和溶剂的ZnO和MgO，然后使晶种基材与所得熔体直接接触，并拉出种子，生长含Mg的ZnO混合单晶 晶体基板连续或间歇地。 然后，通过抛光或蚀刻去除衬底，并且通过液相外延生长的单晶的-c面的表面进行抛光或蚀刻来获得自支撑Mg的ZnO混合单晶晶片 生长方式。

公开(公告)号：US20100120187A1

公开(公告)日：2010-05-13

申请号：US12451641

申请日：2008-05-22

申请人： Takashi Taniguchi ,  Kenji Watanabe ,  Yoichi Kubota ,  Osamu Tsuda

发明人： Takashi Taniguchi ,  Kenji Watanabe ,  Yoichi Kubota ,  Osamu Tsuda

IPC分类号： H01L21/20

CPC分类号： C30B9/10 ,  C01B21/064 ,  C01P2004/02 ,  C01P2004/03 ,  C30B19/02 ,  C30B29/38

摘要： The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure.The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.

摘要翻译： 本发明的目的是提供即使在常压下也能在坚固的基底上合成高纯度hBN晶体的方法。 制造六方氮化硼晶体的本发明方法的特征在于包括制备氮化硼原料和包含过渡金属的金属溶剂的混合物的制备步骤，使蓝宝石衬底与该混合物接触的接触步骤， 加热混合物的加热步骤和在常压下重结晶在加热步骤中获得的熔体的再结晶步骤。 还特征在于使用选自Fe，Ni，Co及其组合的过渡金属作为金属溶剂，以及选自Cr，TiN和V中的至少一种物质，而不用任何 蓝宝石衬底。

公开(公告)号：US20100116197A1

公开(公告)日：2010-05-13

申请号：US12690991

申请日：2010-01-21

申请人： Herman Philip Godfried ,  Geoffrey Alan Scarsbrook ,  Daniel James Twitchen ,  Evert Pieter Houwman ,  Wilhelmus Gertruda Maria Nelissen ,  Andrew John Whitehead ,  Clive Edward Hall ,  Philip Maurice Martineau

发明人： Herman Philip Godfried ,  Geoffrey Alan Scarsbrook ,  Daniel James Twitchen ,  Evert Pieter Houwman ,  Wilhelmus Gertruda Maria Nelissen ,  Andrew John Whitehead ,  Clive Edward Hall ,  Philip Maurice Martineau

IPC分类号： C30B25/02

CPC分类号： C30B29/04 ,  C01B32/25 ,  C01P2006/60 ,  C01P2006/80 ,  C30B9/00 ,  C30B19/02 ,  C30B25/02 ,  C30B25/165 ,  C30B25/20 ,  C30B25/205 ,  C30B33/02 ,  C30B33/12 ,  G02B1/002 ,  G02B1/02

摘要： A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

摘要翻译： 适用于光学元件或元件的CVD单晶金刚石材料。 它适用于各种各样的光学应用，例如光学窗口，激光窗口，光反射器，光折射器和光栅以及标准具。 CVD金刚石材料通过CVD方法在受控低水平的氮气存在下产生，以控制晶体缺陷的发展，从而获得具有光学应用关键特性的金刚石材料。