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    Resonant cavity light emitting devices and associated method
    1.
    发明授权
    Resonant cavity light emitting devices and associated method 失效
    谐振腔发光器件及相关方法

    公开(公告)号：US07582498B2

    公开(公告)日：2009-09-01

    申请号：US11295627

    申请日：2005-12-06

    申请人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

    发明人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

    IPC分类号： H01L21/00 ,  C30B15/00

    CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

    摘要： A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

    摘要翻译： 一种方法可以产生谐振腔发光器件。 种子氮化镓晶体和含氮过热流体中的源材料可以提供用于其间的氮化镓前体的质量传输的介质。 可以通过在种子氮化镓晶体和源材料之间施加第一热分布来制备晶种表面。 可以通过在种子氮化镓晶体和源材料之间施加第二热分布而在种子氮化镓晶体的制备表面上生长氮化镓材料，而种子氮化镓晶体和源材料在含氮过热流体 。 可以在单晶氮化镓衬底上沉积III族氮化物层的堆叠。 堆叠可以包括第一镜子子堆叠和适于制造成一个或多个谐振腔发光器件的有源区域。

    Apparatus for producing single crystal and quasi-single crystal, and associated method
    6.
    发明申请
    Apparatus for producing single crystal and quasi-single crystal, and associated method 有权
    用于生产单晶和准单晶的装置及其相关方法

    公开(公告)号：US20060048699A1

    公开(公告)日：2006-03-09

    申请号：US11249896

    申请日：2005-10-13

    申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Victor Lou ,  Thomas McNulty ,  Huicong Hong

    发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Victor Lou ,  Thomas McNulty ,  Huicong Hong

    IPC分类号： C30B28/06 ,  C30B21/02 ,  C30B7/00

    CPC分类号： C30B29/403 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B9/00 ,  C30B29/406 ,  Y10T117/1052 ,  Y10T117/1096

    摘要： An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees Celsius. The energy source may supply thermal energy to the crucible. The controller may control the energy source to selectively direct sufficient thermal energy to a predefined first volume within the crucible to attain and maintain a temperature in the first volume to be in a range of from about 400 degrees Celsius to about 2500 degrees Celsius. The thermal energy may be sufficient to initiate, sustain, or both initiate and sustain growth of a crystal in the first volume. The first temperature in the first volume may be controllable separately from a second temperature in another volume within the crucible. The first temperature and the second temperature differ from each other. Associated methods are provided.

    摘要翻译： 提供一种包括坩埚，能量源和控制器的装置。 该坩埚可以密封到含氮气体，并且在约400摄氏度至约2500摄氏度的温度范围内，至少可以在至少氨的化学惰性。 能量源可以向坩埚提供热能。 控制器可以控制能量源以选择性地将足够的热能引导到坩埚内的预定义的第一体积，以获得并将第一体积中的温度维持在从约400摄氏度到约2500摄氏度的范围内。 热能可能足以启动，维持或同时启动和维持晶体在第一体积中的生长。 第一体积中的第一温度可以与坩埚内的另一体积中的第二温度分开控制。 第一温度和第二温度彼此不同。 提供相关方法。