公开(公告)号：US08425858B2

公开(公告)日：2013-04-23

申请号：US11480068

申请日：2006-06-30

申请人： Steven Francis LeBoeuf ,  Peter Micah Sandvik ,  Radislav Alexandrovich Potyrailo

发明人： Steven Francis LeBoeuf ,  Peter Micah Sandvik ,  Radislav Alexandrovich Potyrailo

IPC分类号： G01N31/22

CPC分类号： G01N33/54366 ,  G01N21/6428 ,  G01N21/645 ,  G01N33/54373 ,  G01N2021/7786

摘要： An apparatus includes an article and a detector. The article includes a substrate, a faceted structure disposed on the substrate, and a sensor layer disposed on the faceted structure. The faceted structure is disposed on the substrate first surface and itself has a surface. The faceted structure surface has peripheral edge defining a diameter of the faceted structure surface. The sensor layer is disposed on the faceted structure surface. The sensor layer can react or can interact with a target species when the target species is sufficiently proximate to the sensor layer. The sensor layer responds to the reaction or to the interaction in a detectable manner. The detector detects a response to the reaction, or to the interaction, of the target species with the sensor layer.

摘要翻译： 一种装置包括物品和检测器。 该物品包括基底，设置在基底上的刻面结构以及设置在刻面结构上的传感器层。 小面结构设置在基板第一表面上并且本身具有表面。 小面结构表面具有限定小平面结构表面直径的周缘。 传感器层设置在刻面结构表面上。 当目标物种足够靠近传感器层时，传感器层可以与目标物种反应或相互作用。 传感器层以可检测的方式响应于反应或相互作用。 检测器检测到目标物种与传感器层的反应或相互作用的响应。

公开(公告)号：US07053425B2

公开(公告)日：2006-05-30

申请号：US10706767

申请日：2003-11-12

申请人： Peter Micah Sandvik ,  Vinayak Tilak ,  Jesse Tucker ,  Stanton Earl Weaver ,  David Mulford Shaddock ,  Jonathan Lloyd Male ,  John Patrick Lemmon ,  Mark Allen Woodmansee ,  Venkatesan Manivannan ,  Deborah Ann Haitko

发明人： Peter Micah Sandvik ,  Vinayak Tilak ,  Jesse Tucker ,  Stanton Earl Weaver ,  David Mulford Shaddock ,  Jonathan Lloyd Male ,  John Patrick Lemmon ,  Mark Allen Woodmansee ,  Venkatesan Manivannan ,  Deborah Ann Haitko

IPC分类号： H01L31/312 ,  G01N27/12

CPC分类号： G01N27/4141 ,  G01N33/0037 ,  Y02A50/245

摘要： A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.

摘要翻译： 一种气体传感器装置，包括半导体衬底; 沉积在半导体衬底的表面上的一个或多个催化栅电极; 沉积在半导体衬底的表面上的一个或多个欧姆接触层和沉积在该表面的至少一部分上的钝化层; 其中所述半导体衬底包括选自碳化硅，金刚石，III族氮化物，III族氮化物的合金，氧化锌及其任何组合的材料。

公开(公告)号：US20120171824A1

公开(公告)日：2012-07-05

申请号：US13418566

申请日：2012-03-13

申请人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

发明人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

IPC分类号： H01L21/335

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/207

摘要： A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region.

摘要翻译： 提供了一种制造异质结构器件的方法，其包括将离子注入到多层结构的表面的一部分中。 碘离子注入第一区域和第二区域之间以形成第三区域。 电荷从第三区域中的二维电子气（2DEG）通道中消耗，以形成从第一区域到第二区域的可逆的非导电通路。 在向靠近第三区域的栅电极施加电压电位时，允许电流从第一区域流到第二区域。

公开(公告)号：US20110221456A1

公开(公告)日：2011-09-15

申请号：US12721916

申请日：2010-03-11

申请人： Jody Alan Fronheiser ,  Don Mark Lipkin ,  Peter Micah Sandvik ,  Todd Michael Striker ,  Martin Mathew Morra

发明人： Jody Alan Fronheiser ,  Don Mark Lipkin ,  Peter Micah Sandvik ,  Todd Michael Striker ,  Martin Mathew Morra

IPC分类号： G01N27/22 ,  G01R27/26 ,  C04B35/565 ,  G01N1/00 ,  C04B35/58 ,  G01R27/08

CPC分类号： C04B35/58092 ,  C04B35/5607 ,  C04B35/5626 ,  C04B35/565 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/3847 ,  C04B2235/3891 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/9676 ,  G01N27/125

摘要： A sensor system, and an associated method for detecting harsh environmental conditions, is provided. The sensor system includes at least one sensor having an electrical sensing element. The electrical sensing element is based on certain classes of composite materials: (a) silicon carbide (SiC); (Mo,W)5Si3C; (Mo,W)Si2; or (b) (Mo,W)5Si3C; (Mo,W)Si2; (Mo,W)5Si3. The sensor system is useful for determining harsh environmental conditions. Gasification systems, which include at least one of the sensor systems are also described.

摘要翻译： 提供了一种用于检测恶劣环境条件的传感器系统和相关联的方法。 传感器系统包括具有电感元件的至少一个传感器。 电感元件基于某些类别的复合材料：（a）碳化硅（SiC）; （Mo，W）5Si3C; （Mo，W）Si2; 或（b）（Mo，W）5Si 3 C; （Mo，W）Si2; （Mo，W）5Si3。 传感器系统可用于确定恶劣的环境条件。 还描述了包括至少一个传感器系统的气化系统。

公开(公告)号：US20090140293A1

公开(公告)日：2009-06-04

申请号：US11946959

申请日：2007-11-29

申请人： Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Vinayak Tilak ,  Siddharth Rajan ,  Ho-Young Cha

发明人： Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Vinayak Tilak ,  Siddharth Rajan ,  Ho-Young Cha

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/2003

摘要： A heterostructure device or article includes a carrier transport layer, a back channel layer and a barrier layer. The carrier transport layer has a first surface and a second surface opposing to the first surface. The back channel layer is secured to the first surface of the carrier transport layer and the barrier layer is secured to the second surface of the carrier transport layer. Each of the carrier transport layer, the back channel layer and the barrier layer comprises an aluminum gallium nitride alloy. The article further includes a 2D electron gas at an interface of the second surface of the carrier transport layer and a surface of the barrier layer. The 2D electron gas is defined by a bandgap differential at an interface, which allows for electron mobility. A system includes a heterostructure field effect transistor that includes the article.

摘要翻译： 异质结构器件或制品包括载流子传输层，背沟道层和阻挡层。 载流子传输层具有与第一表面相对的第一表面和第二表面。 背沟道层被固定到载流子传输层的第一表面，并且阻挡层固定到载流子传输层的第二表面。 载流子传输层，背沟道层和阻挡层中的每一个包括氮化镓铝合金。 该制品还包括在载流子传输层的第二表面和势垒层的表面的界面处的2D电子气体。 2D电子气体由界面处的带隙差分限定，这允许电子迁移率。 一种系统包括包括该物品的异质结构场效应晶体管。

公开(公告)号：US20070215887A1

公开(公告)日：2007-09-20

申请号：US11588181

申请日：2006-10-26

申请人： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Peter Micah Sandvik

发明人： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Peter Micah Sandvik

IPC分类号： H01L33/00

CPC分类号： C30B29/406 ,  C30B7/10

摘要： There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 104 cm−1, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

摘要翻译： 提供了直径至少约2.75毫米的GaN单晶，位错密度小于约10 -4厘米-1，并且基本上没有倾斜边界。 还公开了形成GaN单晶的方法。 该方法包括在室中提供成核中心，GaN源材料和GaN溶剂。 该室被加压。 在室中产生第一和第二温度分布，使得溶剂在室的成核区域中过饱和。 第一和第二温度分布在室内具有不同的温度梯度。

公开(公告)号：US07122827B2

公开(公告)日：2006-10-17

申请号：US10686136

申请日：2003-10-15

申请人： Azar Alizadeh ,  Pradeep Sharma ,  Steven Francis LeBoeuf ,  Suryaprakash Ganti ,  Mark Philip D'Evelyn ,  Kenneth Roger Conway ,  Peter Micah Sandvik ,  Loucas Tsakalakos

发明人： Azar Alizadeh ,  Pradeep Sharma ,  Steven Francis LeBoeuf ,  Suryaprakash Ganti ,  Mark Philip D'Evelyn ,  Kenneth Roger Conway ,  Peter Micah Sandvik ,  Loucas Tsakalakos

IPC分类号： H01L29/06

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  H01L33/24 ,  H01S5/1042 ,  H01S5/183 ,  H01S5/3412 ,  H01S5/423

摘要： The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.

摘要翻译： 本发明涉及一种用于制造宽带隙材料的低缺陷纳米结构和基于它们的光电子器件（例如发光源和激光器）的方法。 本发明利用纳米光刻定义的模板来形成在能量上不利于位错形成的宽带隙材料的纳米结构。 特别地，本发明提供了一种制造无磷的单片白光发光二极管和激光二极管的方法，可用于一般照明和其它应用。

公开(公告)号：US07078731B2

公开(公告)日：2006-07-18

申请号：US11010507

申请日：2004-12-13

申请人： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Stephen Daley Arthur ,  Peter Micah Sandvik

发明人： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Stephen Daley Arthur ,  Peter Micah Sandvik

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B7/005 ,  C30B29/403 ,  C30B29/406

摘要： A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.

摘要翻译： 具有至多约5摩尔％的铝，铟及其组合中的至少一种的GaN晶体。 GaN晶体具有至少一个直径大于2mm的晶粒，位错密度小于约10 -4 cm -2，并且基本上没有倾斜边界。

公开(公告)号：US20130105816A1

公开(公告)日：2013-05-02

申请号：US13281638

申请日：2011-10-26

申请人： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

发明人： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

IPC分类号： H01L29/16 ,  H01L21/56 ,  H01L29/12

CPC分类号： H01L21/56 ,  H01L23/3185 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

公开(公告)号：US08159002B2

公开(公告)日：2012-04-17

申请号：US11961532

申请日：2007-12-20

申请人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

发明人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/207

摘要： A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled to a source electrode and the second region is coupled to a drain electrode. The third region is disposed between the first region and the second region. The third region provides a switchable electrically conductive pathway from the source electrode to the drain electrode. The third region includes iodine ions. A system includes a heterostructure field effect transistor that includes the device.

摘要翻译： 异质结构器件包括具有第一区域，第二区域和第三区域的半导体多层结构。 第一区域耦合到源电极，第二区域耦合到漏电极。 第三区域设置在第一区域和第二区域之间。 第三区域提供从源电极到漏电极的可切换导电路径。 第三区域包括碘离子。 一种系统包括包括该器件的异质结构场效应晶体管。