Ternary oxide phosphor particles
    33.
    发明授权
    Ternary oxide phosphor particles 失效
    三元氧化物荧光体颗粒

    公开(公告)号:US06706210B1

    公开(公告)日:2004-03-16

    申请号:US09857934

    申请日:2001-10-15

    IPC分类号: C09K1108

    摘要: Phosphor compositions are prepared by treating metal oxides or mixed-metal oxides with refractory metals to form cathodoluminescent phosphors stimulatable by electrons of very low energy. The phosphors comprise 90% to 100% of a mixed metal oxide Mx,TyOz (where M is a metal selected from Zn, Sn, In, Cu, and combinations thereof; T is a refractory metal selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and combinations thereof; and O is Oxygen, x, y, and z being chosen such that z is at most stoichiometric for MxTyOz) and 0% to 10% of a dopant comprising a substance selected from a rare earth element of the lanthanide series, Mn, Cr, and combinations thereof, or stoichiometrically excess Zn, Cu, Sn, or In. A blue-light-emitting phosphor based on ZnO treated with Ta2O5 or Ta to form Ta2Zn3O8 is characterized by CIE 1931 chromaticity values x and y, where x is between about 0.14 and 0.20 and y is between about 0.05 and 0.15. In preferred embodiments, a process is specially adapted for forming the phosphor in an electrically-conductive thin-film or surface-layer form in situ during fabrication of displays. A preferred in situ process has an integrated etch stop, which precisely defines the depth of an opening in a field-emission display structure utilizing the low-energy-electron excited phosphor. A field-emission display comprises cells, each having a field-emission cathode and an anode comprising at least one cathodoluminescent phosphor. Arrangements of various color phosphors may be made by selective deposition of suitable dopants. The display cell structures may also have gate elements for controlling electron current flowing to the anode and its phosphor when suitable voltages are applied.

    摘要翻译: 通过用难熔金属处理金属氧化物或混合金属氧化物以形成可由非常低能量的电子刺激的阴极发光荧光体来制备荧光体组合物。 荧光体包含90%至100%的混合金属氧化物Mx,TyOz(其中M是选自Zn,Sn,In,Cu及其组合的金属; T是选自Ti,Zr,Hf,V ,Nb,Ta,Cr,Mo,W及其组合; O是选择氧,x,y和z,使得z对于M x T y O z为至多化学计量),并且0%至10%的包含物质的掺杂剂 选自镧系元素的稀土元素,Mn,Cr及其组合,或化学计量过量的Zn,Cu,Sn或In。 基于用Ta 2 O 5或Ta处理以形成Ta 2 Zn 3 O 8的ZnO的蓝色发光荧光体的特征在于CIE 1931色度值x和y,其中x在约0.14和0.20之间,y在约0.05和0.15之间。 在优选实施例中,一种工艺特别适用于在制造显示器期间在原位形成导电薄膜或表面层形式的荧光体。 优选的原位工艺具有集成的蚀刻停止件,其利用低能电子激发的荧光体在场发射显示结构中精确地限定开口的深度。 场致发射显示器包括每个具有场致发射阴极和包括至少一个阴极发光荧光体的阳极的单元。 可以通过选择性沉积合适的掺杂剂来制备各种颜色的磷光体的布置。 当施加合适的电压时,显示单元结构还可以具有用于控制流向阳极的电子电流的栅极元件及其荧光体。

    Substrates and methods for fabricating the same
    40.
    发明授权
    Substrates and methods for fabricating the same 有权
    基板及其制造方法

    公开(公告)号:US07557374B2

    公开(公告)日:2009-07-07

    申请号:US11627219

    申请日:2007-01-25

    IPC分类号: H01L29/04

    CPC分类号: C09K11/623 C09K11/672

    摘要: An embodiment of the invention provides a substrate. The substrate comprises a single crystal substrate. An epitaxial buffer film is on the single crystal substrate. An epitaxial ZnGa2O4 is on the epitaxial buffer film.

    摘要翻译: 本发明的一个实施方案提供了一种基材。 衬底包括单晶衬底。 外延缓冲膜位于单晶衬底上。 外延ZnGa 2 O 4在外延缓冲膜上。