Abstract:
The invention relates to a computer system capable of automatically duplicating data into discs with automatically blank-disc-supplying. The invention can be implemented by software, hardware, or any of the combinations. Since the invention does not utilize a mechanical arm to move the discs, the structure of the invention saves space compared with a traditional disc duplicating machine; moreover, the cost is less than that of the prior art.
Abstract:
A thermal module includes a fin assembly, a heat spreader, a heat pipe connected between the fin assembly and the heat spreader, and a securing plate. The securing plate has at least three resilient members secured on a bottom surface thereof. Each of the resilient members has a capability to deform resiliently along a direction perpendicular to the bottom surface of the securing plate to resiliently press the heat spreader to an electronic component.
Abstract:
The present invention relates to a motor driving system. The motor driving system includes a motor, a transmission member, a follower member, a position-detecting light emitter, a position-detecting light receiver, and a positioning-status sensing element. The positioning-status sensing element includes a plurality of notches or openings. The positioning-status sensing element is moved between the position-detecting light emitter and the position-detecting light receiver such that a light beam emitted from the position-detecting light emitter is successively penetrated through the notches or openings to be received by the position-detecting light receiver. According to the light-receiving status of the position-detecting light receiver, the speed of the motor is reduced.
Abstract:
A surge-protected hub applied to set up an AC line networking system and used for eliminating the surge problem is provided. The surge-protected hub includes a housing; a plurality of connectors mounted on the housing and electrically connected to an alternating-current power source for independently establishing connections to power lines for power transmission or network lines for networking signal transmission; and a surge-protected device disposed in the housing and arranged upstream of the plurality of connectors for filtering out surge signals that are received from the alternating-current power source while allowing networking signals having a frequency range lying in the frequency range of the surge signals to pass therethrough.
Abstract:
Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
Abstract:
A surge-protected hub applied to set up an AC line networking system and used for eliminating the surge problem is provided. The surge-protected hub includes a housing; a plurality of connectors mounted on the housing and electrically connected to an alternating-current power source for independently establishing connections to power lines for power transmission or network lines for networking signal transmission; and a surge-protected device disposed in the housing and arranged upstream of the plurality of connectors for filtering out surge signals that are received from the alternating-current power source while allowing networking signals having a frequency range lying in the frequency range of the surge signals to pass therethrough.
Abstract:
A heat dissipation device includes a plurality of fins connected to each other and two heat pipes extending through the fins. Each fin includes a plate, an upper flange extending from a top side of the plate, a lower flange extending from a bottom side of the plate and an inner flange extending from an inner periphery of a groove defined in the plate. The fins include first fins and second fins having lengths larger than that of the first fins. The two heat pipes include a wide heat pipe and a narrow heat pipe. The wide heat pipe extends through the grooves and contacts the inner flanges of the first fins and the second fins. The narrow heat pipe extends through the grooves and contacts the inner flanges of the second fins.
Abstract:
An embodiment of the disclosure includes a method of forming a semiconductor structure. A substrate has a region adjacent to a shallow trench isolation (STI) structure in the substrate. A patterned mask layer is formed over the substrate. The patterned mask layer covers the STI structure and a portion of the region, and leaves a remaining portion of the region exposed. A distance between an edge of the remaining portion and an edge of the STI structure is substantially longer than 1 nm. The remaining portion of the region is etched thereby forms a recess in the substrate. A stressor is epitaxially grown in the recess. A conductive plug contacting the stressor is formed.
Abstract:
A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate.
Abstract:
A device includes a semiconductor substrate, a gate stack over the semiconductor substrate, and a stressor region having at least a portion in the semiconductor substrate and adjacent to the gate stack. The stressor region includes a first stressor region having a first p-type impurity concentration, a second stressor region over the first stressor region, wherein the second stressor region has a second p-type impurity concentration, and a third stressor region over the second stressor region. The third stressor region has a third p-type impurity concentration. The second p-type impurity concentration is lower than the first and the third p-type impurity concentrations.