Abstract:
A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma. An exit aperture may be provided in the plasma chamber to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of the associated ion implantation system. In one embodiment, magnets are disposed on opposite sides of the aperture and are used to manipulate the electrons of the plasma.
Abstract:
The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
Abstract:
An ion beam processing system includes a plasma generator with a magnetic flood system. Magnets are provided for reducing the transverse magnetic field in the ion beam transport region of the plasma flood device so as to control charging damage or to neutralize beam space charge in ion beam processing and semiconductor ion implantation. The system is especially adapted for beam lines with ribbon beams.
Abstract:
A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.
Abstract:
The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions.To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions. With the above construction, the electrifications can be deposited to the pre-dosing area on the basis of such an irradiation condition that the differences in electrification at individual positions inside the pre-dosing area can be suppressed and consequently, an influence an electric field has upon the charged particle beam and electrons given off from the sample can be suppressed.
Abstract:
An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable.
Abstract:
An apparatus for increasing electric conductivity to a wafer substrate when exposures to electron beam irradiation is disclosed. More specifically, a more free mechanical contact between a wafer and electric contact pins (within an electrostatic chuck) is provided to significantly reduce the scratch and damage on the wafer backside.
Abstract:
A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma. An exit aperture may be provided in the plasma chamber to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of the associated ion implantation system. In one embodiment, magnets are disposed on opposite sides of the aperture and are used to manipulate the electrons of the plasma.
Abstract:
A high-resolution sample image is acquired by eliminating both of charge over an entire sample (global charge) and charge in a local region irradiated with a primary charged particle beam (local charge). An electrode unit (50) according to the present invention is used in a charged particle beam device. The electrode unit (50) includes a plate electrode disposed facing an insulator sample between an objective lens and the sample, and further includes: a first charge-neutralization charged particle beam source which emits a first charged particle beam to eliminate local charge on the sample; and a second charge-neutralization charged particle beam source (25) which emits a second charged particle beam to eliminate global charge on the sample. A first hole (53) through which a primary charged particle beam passes, and a second hole through which the second charged particle beam is emitted are provided in the plate electrode, and the first and second charge-neutralization charged particle beam sources are disposed at such positions as not to interfere with each other. The charged particle beam emitted from the first charge-neutralization charged particle beam source is introduced in the vicinity of the first hole (53).
Abstract:
A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.