公开(公告)号：US20060289799A1

公开(公告)日：2006-12-28

申请号：US11376522

申请日：2006-03-15

Applicant: Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold Persing

Inventor： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold Persing

IPC: H01J37/08

CPC classification number: H01J37/32412 ,  H01J37/3171 ,  H01J37/3299 ,  H01J2237/31705

Abstract: A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

公开(公告)号：US20050079694A1

公开(公告)日：2005-04-14

申请号：US10927535

申请日：2004-08-27

Applicant: Junichi Koezuka ,  Hiroto Shinoda

Inventor： Junichi Koezuka ,  Hiroto Shinoda

IPC: H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/00 ,  H01L21/425

CPC classification number: H01J37/08 ,  C23C8/36 ,  H01J37/3171 ,  H01J2237/31705 ,  H01L21/265 ,  H01L27/1214 ,  H01L27/127

Abstract: An object of the present invention is to provide an ion implantation method for shortening a down time of an ion implantation apparatus after exposure of a chamber and for improving throughput and a method for manufacturing a semiconductor device. Specifically, the object of the invention is to provide an ion implantation method that can improve throughput during an ion implantation step of B and a method for manufacturing a semiconductor device. The ion implantation method comprises the steps of: introducing an impurity imparting p-type conductivity and H2O in an ion source; ionizing the impurity imparting p-type conductivity; and implanting into a semiconductor film.

Abstract translation: 本发明的目的是提供一种离子注入方法，用于缩短室内暴露后的离子注入装置的停机时间并提高生产量，以及制造半导体装置的方法。 具体地说，本发明的目的在于提供一种能够提高B的离子注入工序时的生产率的离子注入方法以及半导体装置的制造方法。 离子注入方法包括以下步骤：在离子源中引入赋予p型导电性和H 2 O的杂质; 电离杂质赋予p型导电性; 并植入半导体膜。

公开(公告)号：US06660543B1

公开(公告)日：2003-12-09

申请号：US10284996

申请日：2002-10-31

Applicant: James Broc Stirton ,  Kevin R. Lensing ,  Homi E. Nariman ,  Steven P. Reeves

Inventor： James Broc Stirton ,  Kevin R. Lensing ,  Homi E. Nariman ,  Steven P. Reeves

IPC: H01L2166

CPC classification number: G01N21/4788 ,  H01J2237/31705 ,  H01L22/34

Abstract: The present invention is directed to several inventive methods for characterizing implant profiles. In one embodiment, the method comprises providing a semiconducting substrate, forming a first plurality of implant regions in the substrate, and illuminating at least one of the first plurality of implant regions with a light source in a scatterometry tool, wherein the scatterometry tool generates a profile trace corresponding to an implant profile of the illuminated implant region. The method further comprises creating at least one profile trace corresponding,to an anticipated profile of the implant region, wherein, in creating the profile trace, values of at least one of an index of refraction (n) and a dielectric constant (k) are varied, and comparing the generated profile trace to at least one created profile trace.

Abstract translation: 本发明涉及用于表征植入物轮廓的若干发明方法。 在一个实施例中，该方法包括提供半导体衬底，在衬底中形成第一多个植入区域，以及在散射测量工具中用光源照射第一组多个植入区域中的至少一个，其中散射仪工具产生 轮廓迹线对应于照射的植入区域的植入物轮廓。 所述方法还包括产生与植入区域的预期轮廓对应的至少一个轮廓轨迹，其中在产生轮廓轨迹时，折射率（n）和介电常数（k）中的至少一个的值为 变化，并将生成的简档跟踪与至少一个创建的简档跟踪进行比较。

公开(公告)号：US5886355A

公开(公告)日：1999-03-23

申请号：US700268

申请日：1996-08-20

Applicant: Nicholas Bright ,  Paul Anthony Burfield ,  John Pontefract ,  Bernard Francis Harrison ,  Peter Meares ,  David R. Burgin ,  Andrew Stephen Devaney ,  Peter Torin Kindersley

Inventor： Nicholas Bright ,  Paul Anthony Burfield ,  John Pontefract ,  Bernard Francis Harrison ,  Peter Meares ,  David R. Burgin ,  Andrew Stephen Devaney ,  Peter Torin Kindersley

IPC: H01J27/02 ,  H01J27/08 ,  H01J27/18 ,  H01J27/00

CPC classification number: H01J27/18 ,  H01J27/022 ,  H01J27/08 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.

Abstract translation: 离子注入设备被修改，以便为电弧室内的灯丝提供灯丝反射器，并且去除电弧室外的灯丝的电绝缘体并提供屏蔽装置，从而减少导电层的形成 表示绝缘子，大大延长了使用寿命，减少了设备停机时间。 通过用于电弧室的可更换衬垫进一步提高了设备​​的效率，从而提高了电弧室的壁温，从而提高了电子温度。 通过使电弧室本身或其部分的钨，特别是具有用于离子束的出射孔的前板或通过在其中插入可移除的钨衬垫而获得的钨部件的使用减少了 离子束。 电弧室的可维护性通过单独夹紧来改善，该夹具分别夹住灯丝和灯丝反射器。 该夹具还可以有利地由钨制成。

公开(公告)号：US5811823A

公开(公告)日：1998-09-22

申请号：US757726

申请日：1996-11-26

Applicant: Julian G. Blake ,  Piero Sferlazzo ,  Peter H. Rose ,  Adam A. Brailove

Inventor： Julian G. Blake ,  Piero Sferlazzo ,  Peter H. Rose ,  Adam A. Brailove

IPC: H01J37/04 ,  C23C14/48 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/677 ,  H01L21/683

CPC classification number: H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/67069 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.

Abstract translation: 快速有效地处理大量平板显示器的高通量离子注入系统。 离子注入系统具有离子源，电极组件，安装工件的平台和离子束测量结构。 与电极组件结合的离子源形成带状束形状的离子束。 离子束的形成和定向使得离子束的第一部分处理工件，而离子束的第二部分由束测量结构同时测量。 控制器从离子束参数获取束测量结构的数据，然后根据数据产生离子注入系统的控制信号。

公开(公告)号：US20170362699A1

公开(公告)日：2017-12-21

申请号：US15627952

申请日：2017-06-20

Applicant: Axcelis Technologies, Inc.

Inventor： Dennis Elliott Kamenitsa ,  Richard J. Rzeszut ,  Fernando M. Silva ,  Neil K. Colvin

IPC: C23C16/12 ,  C01F7/48 ,  C01B7/13 ,  C23C16/448 ,  H01L21/306 ,  H01L21/02

CPC classification number: C23C16/12 ,  C01B7/135 ,  C01B31/36 ,  C01F7/48 ,  C23C14/48 ,  C23C16/448 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/31705 ,  H01L21/02019 ,  H01L21/02167 ,  H01L21/26506 ,  H01L21/306

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

公开(公告)号：US09524852B2

公开(公告)日：2016-12-20

申请号：US14437046

申请日：2014-12-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hui Tian

IPC: H01L21/66 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3005 ,  H01J37/3171 ,  H01J2237/2445 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01J2237/31711

Abstract: A method for monitoring ion implantation, comprising: a), providing a control piece and forming a mask layer; b), performing ion implantation process to implant a predetermined dose of impurity ions into the control piece, an area on the control piece uncovered by the mask layer being an impurity implantation area and an area on the control piece covered by the mask layer being an impurity non-implantation area; c), peeling off the mask layer from the control piece; d), performing oxidation treatment on the control piece; and e), respectively measuring thicknesses of the oxide layers on the impurity implantation area and the impurity non-implantation area of the control piece, and monitoring the impurity dose of the ion implantation on the basis of a ratio of the thickness of the oxide layer in the impurity implantation area to the thickness of the oxide layer in the impurity non-implantation area. By this method, it is possible to accurately monitor whether or not the dose of the implanted ions meets the predetermined requirement, and it is possible to effectively avoid the defects of incorrect monitor result caused by the variation of the intrinsic resistance of the semiconductor, improve the accuracy of the monitoring, and thus improve the performance and yield rate of the device.

Abstract translation: 一种用于监测离子注入的方法，包括：a）提供控制件并形成掩模层; b），执行离子注入工艺以将预定剂量的杂质离子注入到控制件中，由掩模层未覆盖的作为杂质注入区域的控制片上的区域和由掩模层覆盖的控制片上的区域是 杂质非植入区; c）从掩模层剥离掩模层; d）对控制件执行氧化处理; 和e），分别测量所述杂质注入区域上的氧化物层的厚度和所述控制件的杂质非注入区域，并且基于所述氧化物层的厚度的比率来监测所述离子注入的杂质剂量 在杂质注入区域中的杂质非注入区域中的氧化物层的厚度。 通过该方法，可以准确地监视注入离子的剂量是否满足规定的要求，能够有效地避免半导体固有电阻的变化引起的监视结果不正确的缺陷，提高 监控的准确性，从而提高设备的性能和产出率。

公开(公告)号：US20160203950A1

公开(公告)日：2016-07-14

申请号：US14595813

申请日：2015-01-13

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Anwar HUSAIN ,  Tzuyuan YIIN ,  Tienyu SHENG

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/244 ,  G01K7/22 ,  H01J37/20

CPC classification number: H01J37/3171 ,  C23C14/48 ,  G01K7/22 ,  H01J37/185 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/2001 ,  H01J2237/202 ,  H01J2237/20292 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP.

Abstract translation: 一种用于低温植入配方的方法包括：将从FOUP传送的工件预冷到较低温度以满足配方，根据配方植入工件，并在返回之前将工件后加热到更高的温度 工件到FOUP。 此外，提供了包括处理室，FOUP，冷却模块和加热模块的离子注入机。 可以根据处理室中的配方植入工件。 FOUP可以将工件朝向和远离处理室传送。 冷却模块设置在处理室外部，并且可以在植入工件之前将工件预冷却到较低温度以满足配方。 加热模块设置在处理室外部，并可在将工件返回到FOUP之前将工件后加热到更高的温度。

公开(公告)号：US20150179393A1

公开(公告)日：2015-06-25

申请号：US14135754

申请日：2013-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/082 ,  H01J2237/31705

Abstract: An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.

Abstract translation: 用于离子注入系统的离子源室包括壳体，该壳体至少部分地界定电离区域，高能电子通过该电离区域从阴极移动到电离注入壳体内部的气体分子; 限定所述壳体内部的一个或多个内壁的衬里部分，其中每个衬里部分包括在所述离子注入系统的操作期间暴露于所述电离区域的面向内的表面; 围绕阴极设置的阴极屏蔽; 与阴极间隔开的推斥器; 包括用于从离子源室排出离子的源孔的板; 其中所述推斥板，所述衬套部分，所述阴极罩中的至少一个; 该板或限定源孔的板中的插入物包括碳化硅，其中碳化硅是具有过量碳的非化学计量烧结材料。

公开(公告)号：US08558198B2

公开(公告)日：2013-10-15

申请号：US13177621

申请日：2011-07-07

Applicant: Boon-Chau Tong

Inventor： Boon-Chau Tong

IPC: G21G5/00

CPC classification number: H01J37/3171 ,  H01J37/16 ,  H01J2237/0268 ,  H01J2237/028 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A beam line system includes a hollow tube and a plurality of protruding structures. The hollow tube has an inlet and an outlet. An ion beam emitted by the ion implanter is introduced into the hollow tube through the inlet and exited from the hollow tube through the outlet. The protruding structures are formed on an inner wall of the hollow tube. Each of the protruding structures has a reflective surface for reflecting a portion of the ion beam.

Abstract translation: 束线系统包括中空管和多个突出结构。 中空管具有入口和出口。 由离子注入机发射的离子束通过入口引入中空管，并通过出口从中空管中排出。 突出结构形成在中空管的内壁上。 每个突出结构具有用于反射离子束的一部分的反射表面。