Invention Grant
- Patent Title: Beam line system of ion implanter
- Patent Title (中): 离子注入机的束线系统
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Application No.: US13177621Application Date: 2011-07-07
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Publication No.: US08558198B2Publication Date: 2013-10-15
- Inventor: Boon-Chau Tong
- Applicant: Boon-Chau Tong
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: G21G5/00
- IPC: G21G5/00

Abstract:
A beam line system includes a hollow tube and a plurality of protruding structures. The hollow tube has an inlet and an outlet. An ion beam emitted by the ion implanter is introduced into the hollow tube through the inlet and exited from the hollow tube through the outlet. The protruding structures are formed on an inner wall of the hollow tube. Each of the protruding structures has a reflective surface for reflecting a portion of the ion beam.
Public/Granted literature
- US20130009075A1 BEAM LINE SYSTEM OF ION IMPLANTER Public/Granted day:2013-01-10
Information query
IPC分类:
G | 物理 |
G21 | 核物理;核工程 |
G21G | 化学元素的转变;放射源 |
G21G5/00 | 通过化学反应进行化学元素的推断转变 |